JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B
FEATURE
Power dissipation
P
CM:
Collector current
I
CM:
900
TRANSISTOR (NPN)
TO-92
1. EMITTER
mW (Tamb=25℃)
2. COLLECTOR
3. BASE
3DD13002:
1 A
3DD13002B: 0.8 A
Collector-base voltage
600 V
V
(BR)CBO:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
V
CE
(sat)
V
BE
(sat)
f
T
t
f
t
s
unless otherwise specified)
Test
conditions
MIN
600
400
6
100
100
9
6
0.5
1.1
5
0.5
2.5
V
V
MHz
µs
µs
40
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=100
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 600V, I
E
=0
V
EB
= 6V, I
C
=0
V
CE
= 10V, I
C
= 200 mA
V
CE
= 10V, I
C
= 10 mA
I
C
=200mA, I
B
= 40 mA
I
C
=200mA, I
B
=40 mA
V
CE
=10V, Ic=100mA
f =1MHz
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
CLASSIFICATION OF h
FE(1)
Range
9-15
15-20
20-25
25-30
30-35
35-40
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