JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007
FEATURES
power switching applications
TRANSISTOR (NPN)
TO-220
1.BASE
2.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
3.EMITTER
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
8
2
150
-55~150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Fall time
Storage time
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
= 1mA,I
E
=0
I
C
= 10mA,I
B
=0
I
E
= 1mA, I
C
=0
V
CB
= 700V, I
E
=0
V
CE
= 400V, I
B
=0
V
EB
= 9V, I
C
=0
V
CE
= 5V, I
C
= 2 A
V
CE
=5V, I
C
=5A
I
C
=2A,I
B
=0.4A
I
C
=5A,I
B
=1A
I
C
=8A,I
B
=2A
I
C
=2A, I
B
= 0.4A
I
C
=5A,I
B
=1A
I
C
=500mA,V
CE
=10V,
f=1MH
Z
V
CE
=10V,I
E
=0,f=0.1MHz
V
CC
=125V, I
C
=5A
I
B1
=-I
B2
=1A
I
C
=0.5A
2.7
8
5
Min
700
400
9
1
100
100
40
30
1
2
3
1.2
1.6
4
80
0.7
7.7
V
V
MH
Z
Typ
Max
Unit
V
V
V
mA
µA
µA
C
ob
t
f
t
s
pF
µs
µs
CLASSIFICATION OF h
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
A,Jun,2011
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