JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007N36
TRANSISTOR (NPN)
FEATURES
Power switching applications
1. BASE
2. COLLECTOR
3. EMITTER
TO-220
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
700
400
9
8
2
150
-55~150
Unit
V
V
V
A
W
℃
123
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
V
CE(sat)3
Base-emitter saturation voltage
Storage time
Fall time
Transition frequency
V
BE(sat)1
V
BE(sat)2
Test conditions
I
C
= 1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=700V,I
E
=0
V
CE
=400V,I
B
=0
V
EB
=9V,I
C
=0
V
CE
=5V, I
C
=2A
V
CE
=5V, I
C
=8A
I
C
=2A,I
B
=0.4A
I
C
=5A,I
B
=1A
I
C
=8A,I
B
=2A
I
C
=2A,I
B
=0.4A
I
C
=5A,I
B
=1A
I
C
=500mA (UI9600)
I
C
=500mA (UI9600)
V
CE
=10V, I
C
=0.5A,
f=1
MHz
4
3
10
5
1
2
3
1.2
1.6
6
0.5
V
V
V
V
V
μs
μs
MHz
Min
700
400
9
100
100
100
40
Typ
Max
Unit
V
V
V
μA
μA
μA
t
S
t
f
f
T
15-20
CLASSIFICATION OF h
FE(1)
Range
10-15
20-25
25-30
30-35
35-40
CLASSIFICATION OF
t
S
Rank
Range
A
3-4(μs )
B
4-5(μs )
C
5-6 (μs )
A,Jun,2011
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