4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
FEATURES
• Isolation test voltage 5000 V
RMS
• Interfaces with common logic families
A
C
NC
1
2
3
6 B
5 C
4 E
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
i179004-14
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
DESCRIPTION
This datasheet presents five families of Vishay industry
standard single channel phototransistor couplers. These
families include the 4N35, 4N36, 4N37, 4N38 couplers.
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5000 V
RMS
isolation test voltage.
This isolation performance is accomplished through Vishay
double molding isolation manufacturing process. Comliance
to DIN EN 60747-5-5 partial discharge isolation specification
is available for these families by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance available
for a commecial plastic phototransistor optocoupler.
The devices are available in lead formed configuration suitable
for surface mounting and are available either on tape and reel,
or in standard tube shipping containers.
Note
• For additional design information see application note 45
normalized curves
AGENCY APPROVALS
• UL file no. E52744 (pending)
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• BSI: EN 60065, EN 60950-1
• FIMKO
• CQC
ORDERING INFORMATION
DIP-6
Option 6
4
N
3
x
-
X
0
#
#
T
TAPE
AND
REEL
7.62 mm
Option 7
10.16 mm
Option 9
PART NUMBER
PACKAGE OPTION
> 8 mm
8 mm typ.
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI, FIMKO
DIP-6
4N35-X000
DIP-6, 400 mil, option 6
4N35-X006
SMD-6, option 7
4N35-X007T
(1)
SMD-6, option 9
4N35-X009T
(1)
VDE, UL, cUL, BSI, FIMKO
DIP-6
4N35-X001
DIP-6, 400 mil, option 6
4N35-X016
SMD-6, option 7
4N35-X017T
(1)
SMD-6, option 9
4N35-X019T
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on end.
Rev. 1.8, 16-Jan-12
10 mA
≥
100
4N36-X000
-
4N36-X007
4N36-X009T
(1)
≥
100
-
-
-
-
CTR (%)
4N37-X000
4N37-X006
4N37-X007
4N37-X009
4N37-X001
-
-
-
20 mA
≥
20
4N38
-
4N38-X007T
(1)
4N38-X009T
≥
20
-
-
-
-
Document Number: 83717
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
≤
10 μs
I
FSM
P
diss
V
CEO
V
EBO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
t=1s
V
ISO
VALUE
6
60
2.5
70
70
7
50
100
150
5000
≥
7
≥
7
≥
0.4
DIN IEC 112/VDE 0303, part 1
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
2 mm from case,
≤
10 s
T
sld
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
260
Ω
Ω
°C
°C
°C
UNIT
V
mA
A
mW
V
V
mA
mA
mW
V
RMS
mm
mm
mm
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Isolation thickness between emitter
and detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
(1)
Reverse current
(1)
Capacitance
OUTPUT
4N35
Collector emitter breakdown
voltage
(1)
Emitter collector breakdown
voltage
(1)
Collector base breakdown
voltage
(1)
I
C
= 1 mA
4N36
4N37
4N38
I
E
= 100 μA
4N35
I
C
= 100 μA, I
B
= 1 μA
4N36
4N37
4N38
BV
CEO
BV
CEO
BV
CEO
BV
CEO
BV
ECO
BV
CBO
BV
CBO
BV
CBO
BV
CBO
30
30
30
80
7
70
70
70
80
V
V
V
V
V
V
V
V
V
I
F
= 10 mA
I
F
= 10 mA, T
amb
= - 55 °C
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
F
V
F
I
R
C
O
0.9
1.2
1.3
0.1
25
1.5
1.7
10
V
V
μA
pF
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rev. 1.8, 16-Jan-12
Document Number: 83717
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
TEST CONDITION
V
CE
= 10 V, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 60 V, I
F
= 0
PART
4N35
4N36
4N37
4N38
4N35
V
CE
= 30 V, I
F
= 0,
T
amb
= 100 °C
V
CE
= 60 V, I
F
= 0,
T
amb
= 100 °C
4N36
4N37
4N38
SYMBOL
I
CEO
I
CEO
I
CEO
I
CEO
I
CEO
I
CEO
I
CEO
I
CEO
C
CE
R
IO
C
IO
10
11
0.5
6
6
MIN.
TYP.
5
5
5
MAX.
50
50
50
50
500
500
500
UNIT
nA
nA
nA
nA
μA
μA
μA
μA
pF
Ω
pF
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
OUTPUT
Collector emitter leakage current
(1)
Collector emitter capacitance
coupler
Resistance, input output
(1)
Capacitance, input output
V
CE
= 0
V
IO
= 500 V
f = 1 MHz
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
Indicates JEDEC registered value.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
V
CE
= 10 V, I
F
= 10 mA
V
CE
= 10 V, I
F
= 20 mA
V
CE
= 10 V, I
F
= 10 mA,
T
A
= - 55 °C to + 100 °C
Note
(1)
Indicates JEDEC registered values.
PART
4N35
4N36
4N37
I
C
/I
F (1)
4N38
4N35
4N36
4N37
4N38
SYMBOL
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
CTR
DC
MIN.
100
100
100
20
40
40
40
50
50
50
30
TYP.
MAX.
UNIT
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Turn-on time
(1)
Turn-off time
(1)
TEST CONDITION
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
SYMBOL
t
on
t
off
MIN.
TYP.
10
10
MAX.
UNIT
μs
μs
Note
(1)
Indicates JEDEC registered values.
I
F
0
0
I
C
100 %
90 %
t
p
t
I
F
+5V
I
F
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804-3
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
R
L
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
Fig. 1 - Test Circuit, Non-Saturated Operation
Rev. 1.8, 16-Jan-12
Fig. 2 - Switching Times
Document Number: 83717
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1.8
1.7
T
amb
= 0 °C
1.6
T
amb
= - 25 °C
1.5
1.4
T
amb
= - 40 °C
1.3
T = - 55 °C
amb
1.2
1.1
T
amb
= 25 °C
1.0
T
amb
= 50 °C
0.9
T
amb
= 75 °C
0.8
0.7
T
amb
= 100 °C
0.6
0.1
1
10
100
I
F
- Forward Current (mA)
10 000
I
F
= 0 mA
I
CE0
- Leakage Current (nA)
1000
V
CE
= 40 V
V
F
- Forward Voltage (V)
100
10
1
0.1
0.01
0.001
- 60 - 40 - 20
V
CE
= 24 V
V
CE
= 12 V
0
20
40
60
80 100
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 6 - Leakage Current vs. Ambient Temperature
60
I
C
- Collector Current (mA)
50
40
I
F
= 20 mA
I
F
= 30 mA
1.2
CTR
Norm
- Normalized CTR (NS)
I
F
= 10 mA
V
CE
= 5 V
1.0
0.8
0.6
0.4
0.2
0
- 60 - 40 - 20
I
F
= 1 mA
I
F
= 5 mA
30
I
F
= 15 mA
20
10
0
0
1
2
3
4
5
I
F
= 10 mA
I
F
= 5 mA
6
7
8
0
20
40
60
80 100
V
CE
- Collector Emitter Voltage (NS) (V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS)
Fig. 7 - Normalized CTR (NS) vs. Ambient Temperature
25
CTR
Norm
- Normalized CTR (sat)
I
F
= 25 mA
1.2
I
F
= 10 mA
V
CE
= 0.4 V
I
C
- Collector Current (mA)
20
15
I
F
= 10 mA
1.0
0.8
0.6
I
F
= 1 mA
I
F
= 5 mA
10
I
F
= 5 mA
0.4
0.2
0
- 60 - 40 - 20
5
I
F
= 1 mA
I
F
= 2 mA
0
0
0.1
0.2
0.3
0.4
V
CE
- Collector Emitter Voltage (sat) (V)
0
20
40
60
80 100
T
amb
- Ambient Temperature (°C)
Fig. 5 - Collector Current vs. Collector Emitter Voltage (sat)
Fig. 8 - Normalized CTR (sat) vs. Ambient Temperature
Rev. 1.8, 16-Jan-12
Document Number: 83717
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
4N35-X, 4N36-X, 4N37-X, 4N38
www.vishay.com
Vishay Semiconductors
1.2
CTR
Norm
- Normalized CTR (NS)
V
CE
= 5 V
1000
V
CC
= 5 V
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 40 °C
T
amb
= - 55 °C
1.0
0.8
0.6
0.4
0.2
f
CTR
- CTR Frequency (kHz)
100
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
10
0
0.1
1
10
100
1
0.1
1
10
100
I
F
- Forward Current (mA)
I
C
- Collector Current (mA)
Fig. 9 - Normalized CTR (NS) vs. Forward Current
Fig. 12 - CTR Frequency vs. Collector Current
1.2
CTR
Norm
- Normalized CTR (sat)
V
CE
= 0.4 V
1000
V
CE
= 5 V, I
F
= 10 mA
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 40 °C
T
amb
= - 55 °C
1.0
0.8
0.6
0.4
0.2
0
0.1
t
on
, t
off
-
Switching
Time (μs)
t
off
100
10
t
on
T
amb
= 50 °C
T
amb
= 75 °C
T
amb
= 100 °C
1
1
10
100
0.1
0.1
1
10
100
I
F
- Forward Current (mA)
R
L
- Load Resistance (kΩ)
Fig. 10 - Normalized CTR (sat) vs. Forward Current
Fig. 13 - Switching Time vs. Load Resistance
0
V
CE
= 5 V
- 20
- 40
Phase (deg)
- 60
- 80
- 100
- 120
- 140
- 160
1
10
100
1000
f - Frequency (kHz)
Fig. 11 - CTR Frequency vs. Phase Angle
Rev. 1.8, 16-Jan-12
Document Number: 83717
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DigiKey得捷技术专区
