4N2X 4N3X H11AX series
Feature:
4N2X: 4N25, 4N26, 4N27, 4N28
4N3X: 4N35, 4N36, 4N37, 4N38
H11AX: H11A1, H11A2, H11A3, H11A4, H11A5
High Isolation voltage (Viso = 5000V rms)
Operating Temperature up to 100 ºC
Meets all JEDEC specifications
Available in standard DIP, wide lead bend, and
surface mount lead bend options.
Conventional black housing package
6-PIN PHOTOTRANSISTOR
OPTOCOUPLER
Certification & Compliance:
Pb free and RoHS Compliant
UL recognized (File # E338132)
VDE recognized (File # 40030457)
Dimension: (Dot location indicated pin 1)
6 Pin DIP option:
Product: 4N2X 4N3X H11AX series
Date: February 1, 2011
Version# 1.1
Page 1 of 17
4N2X 4N3X H11AX series
6-PIN PHOTOTRANSISTOR
OPTOCOUPLER
Wide lead bend (option W):
SMD lead bend (option S):
-
-
All Dimensions are in mm
Tolerance = +/- 0.1mm
Product: 4N2X 4N3X H11AX series
Date: February 1, 2011
Version# 1.1
Page 2 of 17
4N2X 4N3X H11AX series
6-PIN PHOTOTRANSISTOR
OPTOCOUPLER
Absolute Maximum Rating:
Symbol
T
STG
T
OPR
T
SOL
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Rating
-55 ~ +150
-55 ~ +100
260 for 10 sec.
200
60
1
6
100
1.41
80
80
7
7
150
1.76
Units
ºC
ºC
ºC
mW
mA
A
V
mW
mW/ºC
V
V
V
V
mW
mW/ºC
P
TOT
Total Power Dissipation
EMITTER
I
F
I
FM
V
R
P
D
Continuous Forward Current
Peak Forward Current (t = 10us)
Reverse Voltage
Power Dissipation
Power Dissipation Derated above 25ºC
DETECTOR
V
CEO
Collector–Emitter Voltage
V
CBO
Collector-Base Voltage
V
ECO
V
EBO
P
C
Emitter-Collector Voltage
Emitter-Base Voltage
Collector Power Dissipation
Collector Power Dissipation Derated above 25ºC
Product: 4N2X 4N3X H11AX series
Date: February 1, 2011
Version# 1.1
Page 3 of 17
4N2X 4N3X H11AX series
6-PIN PHOTOTRANSISTOR
OPTOCOUPLER
Electrical Characteristic
(T
A
=25
o
C)
Emitter
Symbol
V
F
I
R
C
in
Characteristics
Forward Voltage
Reverse Current
Input Capacitance
4N2X
4N3X
H11AX
Device
Test Condition
I
F
= 10mA
V
R
= 6V
V = 0,
f = 1MHz
Min
-
-
-
Range
Typ
1.2
-
30
Max
1.5
10
-
Unit
V
uA
pF
Detector
Symbol
I
CBO
Characteristic
Collector-Base dark
current
Collector-Emitter
dark current
Collector-Emitter
breakdown voltage
Emitter-Base
breakdown voltage
Emitter-Collector
breakdown voltage
Emitter-Base
breakdown voltage
Collector-Emitter
capacitance
Device
-
4N2X
H11AX
4N3X
-
-
-
-
-
Test
Condition
V
CB
= 10V
V
CE
= 10V,
I
F
= 0mA
V
CE
= 60V,
I
F
= 0mA
Ic = 1mA
I
E
= 0.1mA
I
E
= 0.1mA
I
E
= 0.1mA
V
CE
= 0V,
f = 1MHz
Min
-
-
-
80
80
7
7
-
Range
Typ
-
-
-
-
-
-
-
8
Max
20
50
50
-
-
-
-
-
Unit
nA
nA
nA
V
V
V
V
pF
I
CEO
BV
CEO
BV
CBO
BV
ECO
BV
EBO
C
CE
Product: 4N2X 4N3X H11AX series
Date: February 1, 2011
Version# 1.1
Page 4 of 17
4N2X 4N3X H11AX series
6-PIN PHOTOTRANSISTOR
OPTOCOUPLER
DC Transfer Characteristic
Symbol
Characteristic
Device
4N35, 4N36,
4N37
H11A1
H11A5
4N25, 4N26,
4N38, H11A2,
H11A3
4N27,4N28,
H11A4
4N25,4N26, 4N27,
4N28
4N35, 4N36, 4N37
H11A1, H11A2,
H11A3, H11A4,
H11A5
4N38
I
F
= 50mA,
I
c
=2mA
I
F
= 10mA,
I
c
=0.5mA
I
F
= 20mA,
I
c
=4mA
Test
Condition
Min
100
50
30
I
F
= 10mA,
V
CE
= 10V
20
Range
Typ
Max
-
-
-
-
-
-
-
-
%
Unit
CTR
Current Transfer
Ratio
10
-
-
-
-
-
-
-
-
-
-
0.5
0.3
0.4
1.0
V
V
CE(Sat)
Collector-Emitter
saturation voltage
Isolation Characteristic
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Isolation Voltage
Isolation
Resistance
Isolation
Capacitance
Device
-
-
-
Test
Condition
-
V
IO
= 500Vdc
V
IO
= 0,
f =1MHz
Min
5000
-
-
Range
Typ
Max
-
10
11
0.2
-
-
-
Unit
V
rms
Ω
pF
Product: 4N2X 4N3X H11AX series
Date: February 1, 2011
Version# 1.1
Page 5 of 17
