UNISONIC TECHNOLOGIES CO., LTD
4N70
4.4A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
1
TO-220F1
TO-252
Power MOSFET
1
TO-220
1
TO-220F
The UTC
4N70
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche. This high speed switching power MOSFET is usually
used in power supplies, PWM motor controls, high efficient DC to
DC converters and bridge circuits.
1
FEATURES
* R
DS(ON)
< 2.8Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 15nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
1
TO-251
1
TO-262
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
4N70L-TA3-T
4N70L-TF1-T
4N70L-TF3-T
4N70L-TM3-T
4N70L-TN3-R
4N70L-T2Q-T
Pin Assignment: G: Gate
Halogen Free
4N70G-TA3-T
4N70G-TF1-T
4N70G-TF3-T
4N70G-TM3-T
4N70G-TN3-R
4N70G-T2Q-T
D: Drain
S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-340.G
4N70
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-251
TO-252
TO-262
MARKING
Power MOSFET
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QW-R502-340.G
4N70
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
4.4
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
17.6
A
260
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
10.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
106
Power Dissipation
TO-220F/TO-220F1
P
D
36
W
TO-251/ TO-252
49
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 26.9mH, I
AS
= 4.4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
4.4A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
110
1.18
3.47
2.55
UNIT
°С/W
PARAMETER
TO-220/TO-220F
TO-220F1/TO-262
Junction to Ambient
TO-251/ TO-252
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-251/ TO-252
θ
JC
°С/W
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QW-R502-340.G
4N70
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0 V, I
D
= 250
μA
700
V
V
DS
= 700 V, V
GS
= 0 V
10
μA
100
Forward
V
GS
= 30 V, V
DS
= 0 V
nA
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250μA, Referenced to 25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2 A
2.6 2.8
Ω
DYNAMIC CHARACTERISTICS
520 670 pF
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V,
Output Capacitance
C
OSS
70 90 pF
f = 1MHz
Reverse Transfer Capacitance
C
RSS
8
11 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
13 35
ns
Turn-On Rise Time
t
R
45 100 ns
V
DD
= 350V, I
D
= 4.4A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
25 60
ns
Turn-Off Fall Time
t
F
35 80
ns
15 20 nC
Total Gate Charge
Q
G
V
DS
= 560V, I
D
= 4.4A,
Gate-Source Charge
Q
GS
3.4
nC
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
7.1
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
4.4
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6 A
Forward Current
250
ns
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
= 4.4 A,
dI/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
1.5
μC
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R502-340.G
4N70
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-340.G
