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51HQ045

DIODE 60 A, 45 V, SILICON, RECTIFIER DIODE, DO-203AB, HERMETIC SEALED, DO-5, 1 PIN, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件:51HQ045

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器件参数
参数名称
属性值
零件包装代码
DO-5
包装说明
O-MUPM-D1
针数
1
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, HIGH RELIABILITY
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-203AB
JESD-30 代码
O-MUPM-D1
最大非重复峰值正向电流
10800 A
元件数量
1
相数
1
端子数量
1
最低工作温度
-65 °C
最大输出电流
60 A
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
45 V
表面贴装
NO
技术
SCHOTTKY
端子形式
SOLDER LUG
端子位置
UPPER
Base Number Matches
1
文档预览
Bulletin PD-2.021 rev. E 11/02
51HQ... SERIES
SCHOTTKY RECTIFIER
60 Amp
TO-203AB (DO-5)
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 60 Apk, T
J
= 125°C
range
35 to 45
10,800
0.58
- 65 to 150
V
A
V
°C
Description/ Features
Units
A
The 51HQ Schottky rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150° C junction temperature. Typical applications are
in switching power supplies, converters, free-wheeling di-
odes, and reverse battery protection.
150° C T
J
operation
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Hermetic packaging
51HQ...
60
Conforms to JEDEC Outline DO-203AB (DO-5)
Dimensions in millimeters and (inches)
www.irf.com
1
51HQ... Series
Bulletin PD-2.021 rev. E 11/02
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
35
40
45
V
RWM
Max. Working Peak Reverse Voltage (V)
51HQ035
51HQ040
51HQ045
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
51HQ
60
10,800
1150
81
12
Units
A
Conditions
50% duty cycle @ T
C
= 96 °C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
T
J
= 25 °C, I
AS
= 12 Amps, L = 1.12 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
51HQ
0.65
0.83
0.58
0.74
Units
V
V
V
V
mA
mA
pF
nH
V/ µs
@ 60A
@ 120A
@ 60A
@ 120A
T
J
= 25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
* See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
5
200
2600
7.5
10000
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
Measured from top of terminal to mounting plane
(Rated V
R
)
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
51HQ
-65 to 150
-65 to 150
0.83
0.25
Units
°C
°C
°C/W
°C/W
DC operation
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Min.
Max.
* See Fig. 4
Mounting surface , smooth and greased
15 (0.53) g (oz.)
23 (20)
46 (40)
Kg-cm Non-lubricated threads
(Ibf-in)
JEDEC
DO-203AB(DO-5)
2
www.irf.com
51HQ... Series
Bulletin PD-2.021 rev. E 11/02
1000
1000
T
J
= 150°C
Reverse Current - I
R
(mA)
100
125°C
100°C
75°C
50°C
0.1
25°C
10
100
1
Instantaneous Forward Current - I
F
(A)
0.01
T = 150°C
J
0
5
10
15
20
25 30
35
40
45
10
Reverse Voltage - V
R
(V)
T
J
= 125°C
T
J
= 25°C
Junction Capacitance - C
T
(pF)
10000
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
T
J
= 25°C
1
1000
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage Drop - V
FM
(V)
1
1.1
100
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
Thermal Impedance - Z
thJC
(°C/W)
D = 0.50
D = 0.33
D = 0.25
0.1
D = 0.17
D = 0.08
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
0.01
Single Pulse
(Thermal Resistance)
0.001
0.00001
Notes:
t1
t2
1. Duty factor D = t1 / t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
0.0001
0.001
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
www.irf.com
3
51HQ... Series
Bulletin PD-2.021 rev. E 11/02
160
Allowable Case Temperature - (°C)
Average Power Loss - (Watts)
150
140
130
120
110
100
90
DC
R
thJC
(DC) = 0.83°C/W
60
50
40
30
20
10
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS Limit
DC
0
10 20
30
40
50
60
70 80
90
0
10
20
30
40
50 60
70
80 90
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
10000
Non-Repetitive Surge Current - I
FSM
(A)
Fig. 6 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
40HFL40S02
+
DUT
IRFP460
Rg = 25 ohm
Vd = 25 Volt
CURRENT
MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
4
www.irf.com
51HQ... Series
Bulletin PD-2.021 rev. E 11/02
Data and specifications subject to change without notice.
This product has been designed for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 11/02
www.irf.com
5
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参数对比
与51HQ045相近的元器件有:51HQ040、51HQ035。描述及对比如下:
型号 51HQ045 51HQ040 51HQ035
描述 DIODE 60 A, 45 V, SILICON, RECTIFIER DIODE, DO-203AB, HERMETIC SEALED, DO-5, 1 PIN, Rectifier Diode DIODE 60 A, 40 V, SILICON, RECTIFIER DIODE, DO-203AB, HERMETIC SEALED, DO-5, 1 PIN, Rectifier Diode DIODE 60 A, 35 V, SILICON, RECTIFIER DIODE, DO-203AB, HERMETIC SEALED, DO-5, 1 PIN, Rectifier Diode
零件包装代码 DO-5 DO-5 DO-5
包装说明 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
针数 1 1 1
Reach Compliance Code unknown unknow unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY FREE WHEELING DIODE, HIGH RELIABILITY
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-203AB DO-203AB DO-203AB
JESD-30 代码 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
最大非重复峰值正向电流 10800 A 10800 A 10800 A
元件数量 1 1 1
相数 1 1 1
端子数量 1 1 1
最低工作温度 -65 °C -65 °C -65 °C
最大输出电流 60 A 60 A 60 A
封装主体材料 METAL METAL METAL
封装形状 ROUND ROUND ROUND
封装形式 POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 45 V 40 V 35 V
表面贴装 NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG
端子位置 UPPER UPPER UPPER
Base Number Matches 1 1 1
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