型号 | 54ACT175ERQMLV | 54ACT175LMQB-RH | 54ACT175WRQMLV | 54ACT175FMQB-RH | 54ACT175DMQB-RH |
---|---|---|---|---|---|
描述 | IC,FLIP-FLOP,QUAD,D TYPE,CMOS, RAD HARD,LLCC,20PIN,CERAMIC | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CQCC20, CERAMIC, LCC-20 | IC,FLIP-FLOP,QUAD,D TYPE,CMOS, RAD HARD,FP,16PIN,CERAMIC | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CDFP16, CERAMIC, FP-16 | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP16, CERAMIC, DIP-16 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
包装说明 | QCCN, LCC20,.35SQ | QCCN, LCC20,.35SQ | DFP, FL16,.3 | DFP, FL16,.3 | DIP, DIP16,.3 |
Reach Compliance Code | compliant | unknown | compliant | unknown | unknown |
JESD-30 代码 | S-XQCC-N20 | S-CQCC-N20 | R-XDFP-F16 | R-GDFP-F16 | R-GDIP-T16 |
负载电容(CL) | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
逻辑集成电路类型 | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP |
最大频率@ Nom-Sup | 95000000 Hz | 95000000 Hz | 95000000 Hz | 95000000 Hz | 95000000 Hz |
最大I(ol) | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A |
功能数量 | 4 | 1 | 4 | 1 | 1 |
端子数量 | 20 | 20 | 16 | 16 | 16 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | QCCN | QCCN | DFP | DFP | DIP |
封装等效代码 | LCC20,.35SQ | LCC20,.35SQ | FL16,.3 | FL16,.3 | DIP16,.3 |
封装形状 | SQUARE | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | FLATPACK | FLATPACK | IN-LINE |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V |
Prop。Delay @ Nom-Sup | 12.5 ns | 12.5 ns | 12.5 ns | 12.5 ns | 12.5 ns |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | 38535V;38534K;883S | 38535Q/M;38534H;883B | 38535V;38534K;883S | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | NO LEAD | NO LEAD | FLAT | FLAT | THROUGH-HOLE |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm |
端子位置 | QUAD | QUAD | DUAL | DUAL | DUAL |
总剂量 | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V |
触发器类型 | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
系列 | - | ACT | - | ACT | ACT |
JESD-609代码 | - | e0 | e0 | e0 | e0 |
长度 | - | 8.89 mm | - | 9.6645 mm | 19.43 mm |
位数 | - | 4 | - | 4 | 4 |
输出极性 | - | COMPLEMENTARY | - | COMPLEMENTARY | COMPLEMENTARY |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
传播延迟(tpd) | - | 12.5 ns | - | 12.5 ns | 12.5 ns |
座面最大高度 | - | 1.905 mm | - | 2.032 mm | 5.08 mm |
最大供电电压 (Vsup) | - | 5.5 V | - | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | - | 4.5 V | - | 4.5 V | 4.5 V |
端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
宽度 | - | 8.89 mm | - | 6.604 mm | 7.62 mm |
最小 fmax | - | 95 MHz | - | 95 MHz | 95 MHz |