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5962R9674201VEC

8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, CERAMIC, DIP-16

器件类别:模拟混合信号IC    信号电路   

厂商名称:Renesas(瑞萨电子)

厂商官网:https://www.renesas.com/

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器件参数
参数名称
属性值
零件包装代码
DIP
包装说明
DIP, DIP16,.3
针数
16
Reach Compliance Code
unknown
模拟集成电路 - 其他类型
SINGLE-ENDED MULTIPLEXER
JESD-30 代码
R-CDIP-T16
JESD-609代码
e4
标称负供电电压 (Vsup)
-15 V
信道数量
8
功能数量
1
端子数量
16
最大通态电阻 (Ron)
1500 Ω
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装代码
DIP
封装等效代码
DIP16,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
电源
+-15 V
认证状态
Not Qualified
筛选级别
MIL-PRF-38535 Class V
座面最大高度
5.08 mm
最大供电电流 (Isup)
2 mA
标称供电电压 (Vsup)
15 V
表面贴装
NO
最长断开时间
600 ns
最长接通时间
600 ns
切换
BREAK-BEFORE-MAKE
技术
CMOS
温度等级
MILITARY
端子面层
GOLD
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
总剂量
100k Rad(Si) V
宽度
7.62 mm
Base Number Matches
1
文档预览
HS-508ARH
DUCT
E PRO PRODUCT
LET
OBSO
TUTE
Data
FN4
UBSTI
Sheet
824
BLE S
,
POSSI HS-508BRH
December 1999
File Number
4097.2
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
[ /Title
(HS-
508AR
H)
/Sub-
ject
(Radia-
tion
Hard-
ened 8
Chan-
nel
CMOS
Ana-
log
Multi-
plexer
with
Over-
volt-
age
Protec-
tion)
/Autho
r ()
/Key-
words
(Har-
ris
Corpo-
ration,
Semi-
con-
ductor
Com-
muni-
cations
Divi-
The HS-508ARH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
Reference Application Notes 520 and 521, available from the
Semiconductor Products Division of Intersil, for further
information on the HS-508ARH multiplexer in general.
The HS-508ARH has been specifically designed to meet
exposure to radiation environments. Operation from -55
o
C to
125
o
C is guaranteed.
Features
• Electrically Screened to SMD # 5962-96742
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 1 x 10
5
RAD(Si)
- Dielectrically Isolated Device Islands
- SEP >110 Mev-mg/cm
2
Analog/Digital Overvoltage
Protection
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• DTL/TTL and CMOS Compatible
• Analog Signal Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Product Information
PRODUCT NUMBER
5962R9674201QEC
5962R9674201QXC
5962R9674201VEC
5962R9674201VXC
INTERNAL
MKT. NUMBER
HS1-508ARH-8
HS9-508ARH-8
HS1-508ARH-Q
HS9-508ARH-Q
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
HS1-508ARH/PROTO HS1-508ARH/PROTO
HS9-508ARH/PROTO HS9-508ARH/PROTO
Pinouts
HS1-508ARH 16 LEAD SIDEBRAZE DIP
MIL-STD-1835, CDIP2-T16
TOP VIEW
AO 1
EN 2
-VSUP 3
IN 1 4
IN 2 5
IN 3 6
IN 4 7
OUT 8
16 A1
15 A2
14 GND
13 +VSUP
12 IN 5
11 IN 6
10 IN 7
9 IN 8
A0
EN
-VSUP
IN1
IN2
IN3
IN4
OUT
HS9-508ARH 16 LEAD FLATPACK
MIL-STD-1835, CDFP4-F16
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
A1
A2
GND
+VSUP
IN5
IN6
IN7
IN8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 1999
HS-508ARH
Functional Diagram
IN 1
A0
1
DIGITAL
ADDRESS
P
N
A1
OUT
A2
EN
ADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
8
P
DECODERS
N
IN 8
MULTIPLEX
SWITCHES
TRUTH TABLE
A2
X
L
L
L
L
H
H
H
H
A1
X
L
L
H
H
L
L
H
H
A0
X
L
H
L
H
L
H
L
H
EN
L
H
H
H
H
H
H
H
H
‘‘ON’’ CHANNEL
NONE
1
2
3
4
5
6
7
8
2
HS-508ARH
Schematic Diagrams
V+
R9
Q1
Q4
D3
LEVEL SHIFTER
V+
R10
TTL REFERENCE CIRCUIT
OVERVOLTAGE
PROTECTION
V+
R2
R5
R3
R4
R6
R8
R7
LEVEL
SHIFTED
ADDRESS
TO
DECODE
LEVEL
SHIFTED
ADDRESS
TO
DECODE
ADD
IN.
D2
R1
200Ω
D1
V-
V-
FIGURE 1. ADDRESS INPUT BUFFER AND LEVEL SHIFTER
FROM
DECODE
+V
OVERVOLTAGE
V+
PROTECTION
Q5
D7
D6
D4
D5
OUT
A0 OR A0
IN
A1 OR A1
A2 OR A2
R11
1K
Q6
V
ENABLE
V-
TO N-CHANNEL DEVICE OF THE SWITCH PAIR
TO P-CHANNEL DEVICE OF THE SWITCH PAIR
FROM
DECODE
FIGURE 2. ADDRESS DECODER
FIGURE 3. MULTIPLEX SWITCH
3
HS-508ARH
Die Characteristics
DIE DIMENSIONS:
83 mils x 108 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: SiO
2
Thickness: 8k
Å
±1k
Å
Top Metallization:
Type: AlCu
Thickness: 12.5k
Å
±2k
Å
Substrate:
CMOS
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
6.68e04 A/cm
2
Transistor Count:
506
Metallization Mask Layout
HS-508ARH
IN2
IN1
-V
IN3
IN4
EN
OUT
A0
A1
IN8
IN7
A2
IN6
IN5
+V
GND
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
4
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参数对比
与5962R9674201VEC相近的元器件有:5962R9674201QXC、5962R9674201QEC。描述及对比如下:
型号 5962R9674201VEC 5962R9674201QXC 5962R9674201QEC
描述 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, CERAMIC, DIP-16 8-CHANNEL, SGL ENDED MULTIPLEXER, CDFP16 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
零件包装代码 DIP DFP DIP
包装说明 DIP, DIP16,.3 DFP, FL16,.3 DIP, DIP16,.3
针数 16 16 16
Reach Compliance Code unknown unknown unknown
模拟集成电路 - 其他类型 SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER SINGLE-ENDED MULTIPLEXER
JESD-30 代码 R-CDIP-T16 R-CDFP-F16 R-CDIP-T16
JESD-609代码 e4 e4 e4
标称负供电电压 (Vsup) -15 V -15 V -15 V
信道数量 8 8 8
功能数量 1 1 1
端子数量 16 16 16
最大通态电阻 (Ron) 1500 Ω 1500 Ω 1500 Ω
最高工作温度 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DIP DFP DIP
封装等效代码 DIP16,.3 FL16,.3 DIP16,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE FLATPACK IN-LINE
电源 +-15 V +-15 V +-15 V
认证状态 Not Qualified Not Qualified Not Qualified
筛选级别 MIL-PRF-38535 Class V MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q
座面最大高度 5.08 mm 2.92 mm 5.08 mm
最大供电电流 (Isup) 2 mA 2 mA 2 mA
标称供电电压 (Vsup) 15 V 15 V 15 V
表面贴装 NO YES NO
最长断开时间 600 ns 600 ns 600 ns
最长接通时间 600 ns 600 ns 600 ns
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY
端子面层 GOLD GOLD GOLD
端子形式 THROUGH-HOLE FLAT THROUGH-HOLE
端子节距 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL
总剂量 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V
宽度 7.62 mm 6.73 mm 7.62 mm
Base Number Matches 1 1 1
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