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60SPB060

Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon,

器件类别:分立半导体    二极管   

厂商名称:Sangdest Microelectronics (Nanjing) Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
S-XXSO-N2
Reach Compliance Code
compliant
应用
POWER
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.6 V
JESD-30 代码
S-XXSO-N2
最大非重复峰值正向电流
860 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
UNSPECIFIED
封装形状
SQUARE
封装形式
SMALL OUTLINE
最大重复峰值反向电压
60 V
最大反向电流
6000 µA
表面贴装
YES
技术
SCHOTTKY
端子形式
NO LEAD
端子位置
UNSPECIFIED
Base Number Matches
1
文档预览
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1146, Rev. -
60SPB060/A
Green Products
Power Surface Mount Schottky Rectifier
(60V,60Amp)
Applications:
Switching power supply
Redundant power subsystems
Reverse battery protection
Converters
Many other high current AC/DC power supplies
Features:
150
°C
T
J
operation
Low forward voltage drop
High surge capacities
High frequency operation
Guaranteed reverse avalanche capability
Low profile surface mount package
This is a Pb
Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
Suffix“R”Denotes Reversed Polarity
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1146, Rev. -
60SPB060/A
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(per leg)
Repetitive Avalanche
Current(per leg)
Symbol
V
RWM
I
F(AV)
Condition
-
50% duty cycle, rectangular wave
form
8.3 ms, half Sine pulse
T
J
=25℃,I
AS
=8.0A,
L=1.7mH
I
AS
decaying linearly to 0 in 1
μ
sec Frequency limited by T
J
max.
V
A
=1.5×V
R
Max.
60
60
Units
V
A
I
FSM
E
AS
I
AR
860
54
8.0
A
mJ
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop*
Max. Reverse Current (per
leg) *
Symbol
V
F1
V
F2
I
R1
I
R2
Max. Junction Capacitance
(per leg)
*
Pulse Width < 300µs, Duty Cycle <2%
C
J
Condition
@ 60A, Pulse, T
J
= 25
°C
@ 60A, Pulse, T
J
= 125
°C
@V
R
= rated V
R
, Pulse,
T
J
= 25
°C
@V
R
= rated V
R
, Pulse,
T
J
= 125
°C
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz
Max.
0.60
0.57
6
420
2400
Units
V
V
mA
mA
pF
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
Case Style
Symbol
T
J
T
stg
R
θJC
Condition
-
-
DC operation
SPD-2/A
Specification
-55 to +150
-55 to +150
0.37
Units
°C
°C
°C/W
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1146, Rev. -
60SPB060/A
Green Products
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1146, Rev. -
60SPB060/A
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907
FAX (86) 25-87123900
World Wide Web Site - http://www.sangdest.com.cn
E-Mail Address - sales@ sangdest.com.cn
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参数对比
与60SPB060相近的元器件有:60SPB060R、60SPB060A、60SPB060AR。描述及对比如下:
型号 60SPB060 60SPB060R 60SPB060A 60SPB060AR
描述 Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon,
是否Rohs认证 符合 符合 符合 符合
包装说明 S-XXSO-N2 S-XXSO-N2 S-XSSO-G1 S-XSSO-G1
Reach Compliance Code compliant compliant compliant compliant
应用 POWER POWER POWER POWER
外壳连接 CATHODE ANODE CATHODE ANODE
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 0.6 V 0.6 V 0.6 V 0.6 V
JESD-30 代码 S-XXSO-N2 S-XXSO-N2 S-XSSO-G1 S-XSSO-G1
最大非重复峰值正向电流 860 A 860 A 860 A 860 A
元件数量 1 1 1 1
相数 1 1 1 1
端子数量 2 2 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 60 V 60 V 60 V 60 V
最大反向电流 6000 µA 6000 µA 6000 µA 6000 µA
表面贴装 YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 NO LEAD NO LEAD GULL WING GULL WING
端子位置 UNSPECIFIED UNSPECIFIED SINGLE SINGLE
Base Number Matches 1 1 1 1
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