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6A05

6 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:New Jersey Semiconductor

厂商官网:http://www.njsemi.com

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器件:6A05

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器件参数
参数名称
属性值
厂商名称
New Jersey Semiconductor
Reach Compliance Code
unknown
Base Number Matches
1
文档预览
Jna.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (979!) 379-2922
U.SA
6A05
THRU
6A100
6.0 AMPS. Silicon Rectifiers
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2u
sa
Features
<-
<-
<-
•^
Low forward voltage drop
High current capability
High reliability
High surge current capability
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J
.280 (7.21
.270 (b.B)
DIA.
1.0(25.4)
MIN.
Mechanical Data
•<f
4-
<J-
•$-
<-
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
250°C/10 seconds/.375",(9.5mm) lead
lengths at 5 IDS., (2.3kg) tension
Weight: 1.65 grams
M~
U
|
1
^^
3eo
-!iJi
.052 [1.3)
,04a (1.2J
DIA.
-^-
1.0(2S/i)
——
MIN.
•$-
Dimensions In
In
ch es and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise spec fied.
Single phase, half wave, 60 Hz. resistive or inductive load.
For capacitive load, derate current by 20%
6A05 6A10 6A20
Type Number
Maximum Recurrent Peak Reverse Voltage
50
100
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375 (9.5mm) Lead Length @T
A
= 60'C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method)
Maximum Instantaneous Forward Voltage
Ǥ> 6.0A
Maximum DC Reverse Current <@ T
A
=25"C
at Rated DC Blocking Voltage @ T
A
=100°C
vlaximum Full Load Reverse Current, Full Cycle
Averagg .375"(9.5mm) Lead Length @T
A
=75°C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance R
d
JA ( Note 2 )
Operating Temperature Range Tj
Storage Temperature Range T
CT
G
6A40
6AGO
6A80 5A100
Units
V
V
V
A
A
V
35
50
70
100
140
200
400
280
400
6.0
250
0.95
10
400
50
100
10
600
420
600
800
560
800
1000
700
1000
uA
uA
uA
PF
°CAV
-6510+125
r
°c
-65 to +150
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length,
VI Semi-t adductors reserves lh« right lo thonge wsl conditions, parameter limits ,md package dimensions \nlhoul notice
Information furnished by NJ Scmi-C'onductort is believed lo he both accurate and reliable .11 the lime of going to press. However v. I
'••cini-l Hiduuors .twuinvs nn rcvpunsibility Cor .my errors or mnissimis discovered in us i^e NI Scmi-t.ondiii.iurs tnaiumacs
n'.r. pi'cf. li> v t i i t > ih.u >l:iia-;hveis ,irc current herbre plating .Tilers
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参数对比
与6A05相近的元器件有:5A100、6A10、6A20、6A40、6A80、6AGO。描述及对比如下:
型号 6A05 5A100 6A10 6A20 6A40 6A80 6AGO
描述 6 A, 50 V, SILICON, RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE 6 A, 50 V, SILICON, RECTIFIER DIODE
厂商名称 New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor -
Reach Compliance Code unknown - unknow unknown unknow unknow -
二极管类型 - - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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