首页 > 器件类别 > 二极管

6GBU02

Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon

器件类别:二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

下载文档
器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
R-PSFM-T4
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
UL RECOGNIZED
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
182 A
元件数量
4
相数
1
端子数量
4
最大输出电流
6 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
200 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
Base Number Matches
1
文档预览
PART OBSOLETE - EOL18
Bulletin I2718 rev. E 05/02
6GBU Series
6.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (1500 V
RMS
)
Lead free terminals solderable as per MIL-STD-750 Method 2026
Terminals suitable for high temperature soldering at 260°C for 8-10 secs
UL E160375 approved
Bridge Rectifier
I
O(AV)
= 6A
V
RRM
= 50/ 800V
Description
These GBU Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply and in industrial and consumer equipment.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
6GBU
6
100
175
182
154
138
50 to 800
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
6GBU
C
www.irf.com
1
6GBU Series
Bulletin I2718 rev. E 05/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
V
RRM
, max repetitive
peak rev. voltage
T
J
= T
J
max.
V
50
100
200
400
600
800
V
RMS
, max RMS
voltage
T
J
= T
J
max.
V
35
70
140
280
420
560
I
RRM
max.
@ rated V
RRM
T
J
= 25°C
µA
5
5
5
5
5
5
I
RRM
max.
@ rated V
RRM
T
J
= 150°C
µA
400
400
400
400
400
400
6GBU
005
01
02
04
06
08
Forward Conduction
Parameters
I
O
I
FSM
Maximum DC output current
Maximum peak, one-cycle
non-repetitive surge current,
following any rated load condition
and with rated V
RRM
reapplied
I
2
t
V
FM
I
RM
V
RRM
Maximum I
2
t for fusing,
initial T
J
= T
J
max
Maximum peak forward voltage
per diode
Typical peak reverse leakage
curren t per diode
Maximum repetitive peak
reverse voltage range
154
138
1.0
5.0
400
50 to 800
V
µA
V
A
2
s
t = 10ms
t = 8.3ms
T
J
= 25
o
C, I
FM
= 6A
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
182
t = 8.3ms
T
J
= 150°C
6GBU
6.0
4.8
175
Unit
A
Conditions
T
C
= 100°C, Resistive & inductive load
T
C
= 100°C, Capacitive load
t = 10ms
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
R
thJC
R
thJA
W
T
Operating and storage
temperature range
Max. thermal resistance
junction to case
Thermal resistance,
junction to ambient
Approximate weight
Mounting Torque
4 (0.14)
1.0
9.0
g (oz)
Nm
Lb.in
Bridge to Heatsink
7.4
°C/ W
DC rated current through bridge (1)
2.2
°C/ W
DC rated current through bridge (1)
6GBU
-55 to 150
Unit
o
Conditions
C
Note (1): Bridge mounted on Aluminum heat sink of dim 65 x 35 x 1.5mm, use silicon thermal compound heat
transfer and bolt down using 3mm screw
2
www.irf.com
6GBU Series
Bulletin I2718 rev. E 05/02
Ordering Information Table
Device Code
6
1
1
2
3
-
-
-
GBU
2
08
3
Bridge current
Basic Part Number
Voltage Code: code x 100 = V
RRM
Outline Table
All dimensions are in millimetres
www.irf.com
3
6GBU Series
Bulletin I2718 rev. E 05/01
Maximum Allowable Case Temperature (°C)
160
150
140
130
120
110
100
90
0
1
2
3
4
5
6
7
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
1000
6GBU Series
Instantaneous Forward Current (A)
100
180˚
(Rect)
180˚
(Sine)
10
T
J
= 25˚C
T
J
= 150˚C
1
6GBU Series
0.1
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
12
10
8
6
4
2
0
0
1
2
3
4
5
6
Average Forward Current (A)
Fig. 3 - Total Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
200
180
160
140
120
100
80
60
40
1
180˚
(Sine)
180˚
(Rect)
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6GBU Series
T = 150˚C
J
6GBU Series
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
4
www.irf.com
6GBU Series
Bulletin I2718 rev. E 05/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Multiple Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
www.irf.com
5
查看更多>
参数对比
与6GBU02相近的元器件有:6GBU005、6GBU08、6GBU01、6GBU06、6GBU04。描述及对比如下:
型号 6GBU02 6GBU005 6GBU08 6GBU01 6GBU06 6GBU04
描述 Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 100V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon Bridge Rectifier Diode, 1 Phase, 6A, 400V V(RRM), Silicon
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
包装说明 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknown unknown unknown unknown unknown unknown
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 182 A 182 A 182 A 182 A 182 A 182 A
元件数量 4 4 4 4 4 4
相数 1 1 1 1 1 1
端子数量 4 4 4 4 4 4
最大输出电流 6 A 6 A 6 A 6 A 6 A 6 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 200 V 50 V 800 V 100 V 600 V 400 V
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Base Number Matches 1 1 1 1 1 1
功率模块的驱动电阻如何选定
想请教大侠是否有人知道功率模块的驱动部分的电阻应该如何选定?是否有标准? 这个电阻选的不好会影响...
安_然 模拟电子
萌新求教gps芯片选型
第一次搞gps,各方面都不知道,用于远传抄表集中器,请教各位大神改如何选择,需要注意哪些细节? 萌新...
wyygmer 单片机
求TPMS通讯协议
求TPMS中如何激活传感器的通讯协议,刚接触这个领域 求TPMS通讯协议 加QQ:6367479 ...
janlinzy 汽车电子
基于UC3846的新型开关电源的设计
研究了一种新型开关电源的设计。它采用移相全桥PWM控制电路,输出较大的功率,并具有体积小、重量轻、开...
zbz0529 模拟与混合信号
如何测试USB Camera的驱动是否支持相关的接口API?
BOSS要我测试一下某个USB摄像头的drvier是否支持某个属性,比如 KSPROPERTY_VI...
pl2005t 嵌入式系统
多年工作有关PCB绘图的总结
多年工作有关PCB绘图的总结 多年工作有关PCB绘图的总结 支持一下 回复:多年工作有关PCB绘图...
ayb_ice FPGA/CPLD
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消