首页 > 器件类别 > 逻辑 > 逻辑

74HC1G125GW-Q100

IC DRIVER, Bus Driver/Transceiver

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

下载文档
器件参数
参数名称
属性值
厂商名称
NXP(恩智浦)
零件包装代码
TSSOT
包装说明
TSSOP,
针数
5
Reach Compliance Code
unknown
系列
HC/UH
JESD-30 代码
R-PDSO-G5
长度
2.05 mm
逻辑集成电路类型
BUS DRIVER
位数
1
功能数量
1
端口数量
2
端子数量
5
最高工作温度
125 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd)
150 ns
筛选级别
AEC-Q100
座面最大高度
1.1 mm
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
2 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
宽度
1.25 mm
文档预览
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
Rev. 1 — 18 June 2013
Product data sheet
1. General description
The 74HC1G125-Q100; 74HCT1G125-Q100 is a single buffer/line driver with 3-state
output. Inputs include clamp diodes. This enables the use of current limiting resistors to
interface inputs to voltages in excess of V
CC
.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Input levels:
For 74HC1G125-Q100: CMOS level
For 74HCT1G125-Q100: TTL level
Symmetrical output impedance
High noise immunity
Low power consumption
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1G125GW-Q100
74HCT1G125GW-Q100
74HC1G125GV-Q100
74HCT1G125GV-Q100
40 C
to +125
C
SC-74A
40 C
to +125
C
Name
TSSOP5
Description
Version
plastic thin shrink small outline package; 5 leads; SOT353-1
body width 1.25 mm
plastic surface mounted package; 5 leads
SOT753
Type number
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
4. Marking
Table 2.
Marking
Marking code
[1]
HM
TM
H25
T25
Type number
74HC1G125GW-Q100
74HCT1G125GW-Q100
74HC1G125GV-Q100
74HCT1G125GV-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2
A
Y
4
2
4
1
EN
mna119
1
OE
mna118
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
A
Y
OE
mna120
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
Fig 4.
Pin configuration
74HC_HCT1G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 June 2013
2 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
6.2 Pin description
Table 3.
Symbol
OE
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
output enable input (active LOW)
data input
ground (0 V)
data output
supply voltage
7. Functional description
7.1 Function table
Table 4.
Control
OE
L
L
H
[1]
Function table
[1]
Input
A
L
H
X
Output
Y
L
H
Z
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
[1]
Min
0.5
-
-
-
-
70
65
Max
+7.0
20
20
35
70
-
+150
200
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
74HC_HCT1G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 June 2013
3 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC1G125-Q100
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT1G125-Q100
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics 74HC1G125-Q100
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
[1]
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
6.0
mA; V
CC
= 4.5 V
I
O
=
7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
I
CC
C
I
input leakage current
OFF-state output current
supply current
input capacitance
All information provided in this document is subject to legal disclaimers.
Conditions
Min
1.5
3.15
4.2
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
-
-
-
-
Typ
1.2
2.4
3.2
0.8
2.1
2.8
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
-
1.5
Max
-
-
-
0.5
1.35
1.8
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
5
10
-
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
pF
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
74HC_HCT1G125_Q100
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 June 2013
4 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
Table 7.
Static characteristics 74HC1G125-Q100
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +125
C
V
IH
HIGH-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
6.0
mA; V
CC
= 4.5 V
I
O
=
7.8
mA; V
CC
= 6.0 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 6.0 mA; V
CC
= 4.5 V
I
O
= 7.8 mA; V
CC
= 6.0 V
I
I
I
OZ
I
CC
input leakage current
OFF-state output current
supply current
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
10
20
V
V
V
V
V
A
A
A
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
-
-
-
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
[1]
All typical values are measured at T
amb
= 25
C.
74HC_HCT1G125_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 18 June 2013
5 of 16
查看更多>
参数对比
与74HC1G125GW-Q100相近的元器件有:74HCT1G125GV-Q100、74HCT1G125GW-Q100、74HC1G125GV-Q100。描述及对比如下:
型号 74HC1G125GW-Q100 74HCT1G125GV-Q100 74HCT1G125GW-Q100 74HC1G125GV-Q100
描述 IC DRIVER, Bus Driver/Transceiver IC DRIVER, Bus Driver/Transceiver IC DRIVER, Bus Driver/Transceiver IC DRIVER, Bus Driver/Transceiver
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 TSSOT SC-74A TSSOT SC-74A
包装说明 TSSOP, TSSOP, TSSOP, TSSOP,
针数 5 5 5 5
Reach Compliance Code unknown unknown unknown unknown
系列 HC/UH HCT HCT HC/UH
JESD-30 代码 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5 R-PDSO-G5
长度 2.05 mm 2.9 mm 2.05 mm 2.9 mm
逻辑集成电路类型 BUS DRIVER BUS DRIVER BUS DRIVER BUS DRIVER
位数 1 1 1 1
功能数量 1 1 1 1
端口数量 2 2 2 2
端子数量 5 5 5 5
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
输出特性 3-STATE 3-STATE 3-STATE 3-STATE
输出极性 TRUE TRUE TRUE TRUE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd) 150 ns 36 ns 36 ns 150 ns
筛选级别 AEC-Q100 AEC-Q100 AEC-Q100 AEC-Q100
座面最大高度 1.1 mm 1.1 mm 1.1 mm 1.1 mm
最大供电电压 (Vsup) 6 V 5.5 V 5.5 V 6 V
最小供电电压 (Vsup) 2 V 4.5 V 4.5 V 2 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.95 mm 0.65 mm 0.95 mm
端子位置 DUAL DUAL DUAL DUAL
宽度 1.25 mm 1.5 mm 1.25 mm 1.5 mm
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消