INTEGRATED CIRCUITS
DATA SHEET
74HC2G126; 74HCT2G126
Dual buffer/line driver; 3-state
Product specification
2003 Mar 03
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
FEATURES
•
Wide operating voltage from 2.0 to 6.0 V
•
Symmetrical output impedance
•
High noise immunity
•
Low power dissipation
•
Balanced propagation delays
•
Very small 8 pins package
•
Output capability: bus driver
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
•
Specified from
−40
to +85
°C
and
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= r
f
≤
6.0 ns.
74HC2G126; 74HCT2G126
DESCRIPTION
The 74HC2G/HCT2G126 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G126 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A LOW at
pin OE causes the output as assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT126.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
PARAMETER
propagation delay nA to nY
input capacitance
output capacitance
power dissipation capacitance output enabled; notes 1 and 2
per buffer
output disabled; notes 1 and 2
CONDITIONS
HC2G
C
L
= 15 pF; V
CC
= 5 V
10
1
1.5
11
1
1
1.5
11
1
HCT2G
12
ns
pF
pF
pF
pF
UNIT
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
2. For the 74HC2G126 the condition is V
I
= GND to V
CC
.
For the 74HCT2G126 the condition is V
I
= GND to V
CC
−
1.5 V.
2003 Mar 03
2
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
FUNCTION TABLE
See note 1.
INPUT
nOE
H
H
L
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
TYPE NUMBER
74HC2G126DP
74HCT2G126DP
74HC2G126DC
74HCT2G126DC
PIN DESCRIPTION
PIN
1
2
3
4
5
6
7
8
1A
2Y
GND
2A
1Y
2OE
V
CC
SYMBOL
1OE
output enable input
data input
data output
ground (0 V)
data input
data output
output enable input
supply voltage
TEMPERATURE
RANGE
−40
to +125
°C
−40
to +125
°C
−40
to +125
°C
−40
to +125
°C
nA
L
H
X
74HC2G126; 74HCT2G126
OUTPUT
nY
L
H
Z
PACKAGE
PINS
8
8
8
8
PACKAGE
TSSOP8
TSSOP8
VSSOP8
VSSOP8
MATERIAL
plastic
plastic
plastic
plastic
CODE
SOT505-2
SOT505-2
SOT765-1
SOT765-1
MARKING
H26
T26
H26
T26
DESCRIPTION
2003 Mar 03
3
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
74HC2G126; 74HCT2G126
handbook, halfpage
handbook, halfpage
1OE 1
1A 2
8 VCC
7 2OE
2
1
5
7
1A
1OE
2A
2OE
1Y
6
2Y
3
126
2Y 3
GND 4
MNA945
6 1Y
5 2A
MNA946
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
2
1
5
3
7
MNA947
1
EN1
6
handbook, halfpage
A
Y
OE
MNA127
Fig.3 Logic symbol (IEEE/IEC).
Fig.4 Logic diagram (one driver).
2003 Mar 03
4
Philips Semiconductors
Product specification
Dual buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74HC2G126; 74HCT2G126
74HC2G126
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
see DC and AC
characteristics
per device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
MAX.
6.0
V
CC
V
CC
+125
74HCT2G126
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
V
CC
V
CC
+125
V
V
V
°C
t
r
, t
f
−
−
−
−
6.0
−
1000
500
400
−
−
−
−
6.0
−
−
500
−
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110
°C
the value of P
D
derates linearly with 8 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink
current
V
CC
or GND current
storage temperature
power dissipation per
package
for temperature range from
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
MAX.
+7.0
±20
±20
25
50
+150
300
UNIT
V
mA
mA
mA
mA
°C
mW
2003 Mar 03
5
