首页 > 器件类别 > 逻辑 > 逻辑

74LVC1G80GW-Q100,125

D Flip-Flop, LVC/LCX/Z Series, 1-Func, Positive Edge Triggered, 1-Bit, Inverted Output, CMOS, PDSO5

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

下载文档
器件参数
参数名称
属性值
厂商名称
NXP(恩智浦)
包装说明
TSSOP,
Reach Compliance Code
unknown
系列
LVC/LCX/Z
JESD-30 代码
R-PDSO-G5
长度
2.05 mm
逻辑集成电路类型
D FLIP-FLOP
位数
1
功能数量
1
端子数量
5
最高工作温度
125 °C
最低工作温度
-40 °C
输出极性
INVERTED
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd)
13 ns
筛选级别
AEC-Q100
座面最大高度
1.1 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
触发器类型
POSITIVE EDGE
宽度
1.25 mm
最小 fmax
200 MHz
文档预览
74LVC1G80-Q100
Single D-type flip-flop; positive-edge trigger
Rev. 1 — 31 July 2012
Product data sheet
1. General description
The 74LVC1G80-Q100 provides a single positive-edge triggered D-type flip-flop.
Information on the data input is transferred to the Q output on the LOW-to-HIGH transition
of the clock pulse. The input pin D must be stable one set-up time prior to the
LOW-to-HIGH clock transition for predictable operation.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
device in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
NXP Semiconductors
74LVC1G80-Q100
Single D-type flip-flop; positive-edge trigger
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC1G80GW-Q100
40 C
to +125
C
74LVC1G80GV-Q100
40 C
to +125
C
Name
TSSOP5
SC-74A
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
4. Marking
Table 2.
Marking codes
Marking
[1]
VT
V80
Type number
74LVC1G80GW-Q100
74LVC1G80GV-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
D
Q
4
1
2
CP
mna649
D
CP
001aac523
4
2
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
CP
C
C
C
C
D
TG
C
TG
C
Q
C
C
TG
TG
C
C
mna651
Fig 3.
Logic diagram
74LVC1G80_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 31 July 2012
2 of 15
NXP Semiconductors
74LVC1G80-Q100
Single D-type flip-flop; positive-edge trigger
6. Pinning information
6.1 Pinning
/9&*4
'
&3
*1'



DDD

9
&&

4
Fig 4.
Pin configuration SOT353-1 and SOT753
6.2 Pin description
Table 3.
Symbol
D
CP
GND
Q
V
CC
Pin description
Pin
1
2
3
4
5
Description
data input
clock pulse input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Input
CP
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
= LOW-to-HIGH CP transition;
X = don’t care;
q = lower case letter indicates the state of referenced input, one set-up time prior to the LOW-to-HIGH CP transition.
Function table
[1]
Output
D
L
H
X
Q
H
L
q
74LVC1G80_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 31 July 2012
3 of 15
NXP Semiconductors
74LVC1G80-Q100
Single D-type flip-flop; positive-edge trigger
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
P
tot
T
stg
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
total power dissipation
storage temperature
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
-
[1][2]
[1][2]
Max
+6.5
-
+6.5
50
V
CC
+ 0.5
+6.5
50
100
-
250
+150
Unit
V
mA
V
mA
V
V
mA
mA
mA
mW
C
V
O
> V
CC
or V
O
< 0 V
Active mode
Power-down mode
V
O
= 0 V to V
CC
0.5
0.5
-
-
100
T
amb
=
40 C
to +125
C
[3]
-
65
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP5 and SC-74A packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
t/V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 1.65 V to 2.7 V
V
CC
= 2.7 V to 5.5 V
Active mode
V
CC
= 0 V; Power-down mode
Conditions
Min
1.65
0
0
0
40
-
-
Typ
-
-
-
-
-
-
-
Max
5.5
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
V
C
ns/V
ns/V
74LVC1G80_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 31 July 2012
4 of 15
NXP Semiconductors
74LVC1G80-Q100
Single D-type flip-flop; positive-edge trigger
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
V
IH
HIGH-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OH
HIGH-level output voltage
V
I
= V
IH
or V
IL
I
O
=
100 A;
V
CC
= 1.65 V to 5.5 V
I
O
=
4
mA; V
CC
= 1.65 V
I
O
=
8
mA; V
CC
= 2.3 V
I
O
=
12
mA; V
CC
= 2.7 V
I
O
=
24
mA; V
CC
= 3.0 V
I
O
=
32
mA; V
CC
= 4.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
OFF
I
CC
I
CC
C
I
V
IH
input leakage current
power-off leakage current
supply current
additional supply current
input capacitance
HIGH-level input voltage
V
I
= 5.5 V or GND; V
CC
= 0 V to 5.5 V
V
CC
= 0 V; V
I
or V
O
= 5.5 V
V
I
= 5.5 V or GND;
V
CC
= 1.65 V to 5.5 V; I
O
= 0 A
per pin; V
CC
= 2.3 V to 5.5 V;
V
I
= V
CC
0.6 V; I
O
= 0 A
V
CC
= 3.3 V; V
I
= GND to V
CC
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
74LVC1G80_Q100
All information provided in this document is subject to legal disclaimers.
Conditions
Min
0.65
V
CC
1.7
2.0
0.7
V
CC
-
-
-
-
V
CC
0.1
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
-
-
0.65
V
CC
1.7
2.0
0.7
V
CC
-
-
-
-
Typ
[1]
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
5
5
-
-
-
-
-
-
-
-
-
-
-
-
0.35
V
CC
0.7
0.8
0.3
V
CC
-
-
-
-
-
-
0.1
0.45
0.3
0.4
0.55
0.55
5
10
10
500
-
-
-
-
-
0.35
V
CC
0.7
0.8
0.3
V
CC
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
pF
V
V
V
V
V
V
V
V
5 of 15
T
amb
=
40 C
to +125
C
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 31 July 2012
查看更多>
参数对比
与74LVC1G80GW-Q100,125相近的元器件有:。描述及对比如下:
型号 74LVC1G80GW-Q100,125
描述 D Flip-Flop, LVC/LCX/Z Series, 1-Func, Positive Edge Triggered, 1-Bit, Inverted Output, CMOS, PDSO5
厂商名称 NXP(恩智浦)
包装说明 TSSOP,
Reach Compliance Code unknown
系列 LVC/LCX/Z
JESD-30 代码 R-PDSO-G5
长度 2.05 mm
逻辑集成电路类型 D FLIP-FLOP
位数 1
功能数量 1
端子数量 5
最高工作温度 125 °C
最低工作温度 -40 °C
输出极性 INVERTED
封装主体材料 PLASTIC/EPOXY
封装代码 TSSOP
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd) 13 ns
筛选级别 AEC-Q100
座面最大高度 1.1 mm
最大供电电压 (Vsup) 5.5 V
最小供电电压 (Vsup) 1.65 V
标称供电电压 (Vsup) 3.3 V
表面贴装 YES
技术 CMOS
温度等级 AUTOMOTIVE
端子形式 GULL WING
端子节距 0.65 mm
端子位置 DUAL
触发器类型 POSITIVE EDGE
宽度 1.25 mm
最小 fmax 200 MHz
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消