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80EPF02PBF

80 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AC

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
TO-247AC
包装说明
R-PSFM-T3
针数
3
Reach Compliance Code
unknow
其他特性
FREE WHEELING DIODE
应用
FAST SOFT RECOVERY HIGH POWER
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.25 V
JEDEC-95代码
TO-247AC
JESD-30 代码
R-PSFM-T3
最大非重复峰值正向电流
1000 A
元件数量
1
相数
1
端子数量
3
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
80 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
200 V
最大反向恢复时间
0.19 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
Bulletin I2110 rev. B 04/99
QUIET
IR
Series
80EPF..
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
t
rr
< 1.1V @ 40A
= 70ns
V
RRM
200 to 600V
The 80EPF.. fast soft recovery
QUIET
IR
rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Description/Features
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
range
I
FSM
V
F
trr
T
J
@ 40 A, T
J
= 25°C
@ 1A, - 100A/µs
range
Package Outline
Units
A
V
A
V
ns
°C
80EPF..
80
200 to 600
1000
1.1
70
- 40 to 150
TO-247AC
Document Number: 93156
www.vishay.com
1
80EPF..
QUIET
IR
Series
Bulletin I2110 rev. A 06/97
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
200
400
600
V
RSM
, maximum non repetitive
peak reverse voltage
V
300
500
700
I
RRM
150°C
mA
17
80EPF02
80EPF04
80EPF06
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
2
80EPF..
80
850
Units
A
A
Conditions
@ T
C
= 95° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
Surge Current
1000
3610
5100
2
I t
Max. I t for fusing
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
51000
A
2
√s
t = 0.1 to 10ms, no voltage reapplied
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
80EPF..
1.25
3.5
0.85
0.1
17
Units
V
mΩ
V
mA
Conditions
@ 80A, T
J
= 25°C
T
J
= 125°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
V
R
= rated V
RRM
Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
80EPF..
190
3.4
0.5
0.5
Units
ns
A
µC
Conditions
I
F
@ 40Apk
@ 25A/ µs
@ 25°C
di
dt
Q
rr
I
RM
(REC)
I
FM
t
rr
t
Document Number: 93156
www.vishay.com
2
80EPF..
QUIET
IR
Series
Bulletin I2110 rev. A 06/97
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
80EPF..
- 40 to 150
- 40 to 150
0.35
40
0.2
6 (0.21)
Min.
Max.
6 (5)
12 (10)
Units
°C
°C
°C/W
°C/W
°C/W
g (oz.)
Kg-cm
(Ibf-in)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Case Style
Maximum Allowable Case Temperature (°C)
150
140
130
Conduction Angle
DC operation
Mounting surface , smooth and greased
TO-247AC
Maximum Allowable Case Temperature (°C)
150
140
130
120
110
100
90
30°
80
0
20
40
60
80
100
120
140
Average Forward Current (A)
90°
60°
120°
180°
Conduction Period
80EPF.. Series
R
(DC) = 0.35 K/W
thJC
80EPF.. Series
R
thJC
(DC) = 0.35 K/W
120
110
100
90
30°
80
0
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
90°
60°
120°
180°
DC
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
140
120
100
80
60
Conduction Angle
Fig. 2 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
180
160
140
120
100
80 RMS Limit
60
40
20
0
0
20
40
60
80
100
120
140
Average Forward Current (A)
80EPF.. Series
T
J
= 150°C
Conduction Period
180°
120°
90°
60°
30°
RMS Limit
DC
180°
120°
90°
60°
30°
40
20
0
0
10
20
30
40
50 60 70
80
90
Average Forward Current (A)
80EPF.. Series
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Document Number: 93156
www.vishay.com
3
80EPF..
QUIET
IR
Series
Bulletin I2110 rev. A 06/97
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
1000
900
800
700
600
500
400
300
200
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
900
800
700
600
500
400
300
200
0.01
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
80EPF.. Series
80EPF.. Series
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Puls es (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Instantaneous Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
T
J
= 25°C
10
T
J
= 150°C
80EPF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
0.22
0.2
0.18
0.16
0.14
10 A
I
FM
= 125 A
80 A
40 A
20 A
0.6
0.5
0.4
40 A
80EPF.. Series
T
J
= 150°C
I
FM
= 80 A
0.3
0.2
0.1
0
0
40
80
120
0.12
0.1
0.08
0.06
0.04
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
80EPF.. Series
T
J
= 25°C
1A
20 A
10 A
1A
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
Document Number: 93156
www.vishay.com
4
80EPF..
QUIET
IR
Series
Bulletin I2110 rev. A 06/97
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
10 A
14
12
10
8
6
4
2
1A
80EPF.. Series
T
J
= 25°C
I
FM
= 125 A
80 A
40 A
20 A
80EPF.. Series
T
J
= 150°C
I
FM
= 80 A
40 A
20 A
10 A
1A
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
Maximum Reverse Recovery Current - Irr (A)
22
20
18
16
14
12
10
8
6
4
2
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
1A
10 A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
Maximum Reverse Recovery Current - Irr (A)
45
40
35
40 A
80EPF.. Series
T = 25°C
J
I
FM
= 125 A
80 A
40 A
20 A
80EPF.. Series
T
J
= 150°C
I
FM
= 80 A
30
25
20
15
10
1A
20 A
10 A
5
0
0
40
80
120
160
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
Transient Thermal Impedance Z
thJC
(K/W)
1
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
Steady State Value
(DC Operation)
0.1
D=
D=
D=
D=
D=
0.50
0.33
0.25
0.17
0.08
Single Pulse
80EPF.. Series
0. 01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 93156
www.vishay.com
5
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参数对比
与80EPF02PBF相近的元器件有:80EPF04PBF、80EPF06PBF。描述及对比如下:
型号 80EPF02PBF 80EPF04PBF 80EPF06PBF
描述 80 A, 200 V, SILICON, RECTIFIER DIODE, TO-247AC 80 A, 400 V, SILICON, RECTIFIER DIODE, TO-247AC 80 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AC
是否Rohs认证 符合 符合 符合
零件包装代码 TO-247AC TO-247AC TO-247AC
包装说明 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
针数 3 3 3
Reach Compliance Code unknow unknow unknow
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER
外壳连接 CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.25 V 1.25 V 1.25 V
JEDEC-95代码 TO-247AC TO-247AC TO-247AC
JESD-30 代码 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
最大非重复峰值正向电流 1000 A 1000 A 1000 A
元件数量 1 1 1
相数 1 1 1
端子数量 3 3 3
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -40 °C -40 °C -40 °C
最大输出电流 80 A 80 A 80 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 200 V 400 V 600 V
最大反向恢复时间 0.19 µs 0.19 µs 0.19 µs
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT APPLICABLE NOT APPLICABLE
Base Number Matches 1 1 1
厂商名称 - Vishay(威世) Vishay(威世)
JESD-609代码 - e3 e3
端子面层 - MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
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