JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
8550S
TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
TO-92
1.
EMITTER
COLLECTOR
BASE
FEATURE
Excellent h
FE
linearity
2.
3.
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Junction and Storage Temperature
Value
-40
-25
-5
-500
625
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE
(sat)
f
T
V
CE
= -1V, IC= -500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=- 6V, I
C
=-20mA
f =30MHz
150
50
-0.6
-1.2
V
V
MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Test
conditions
Min
-40
-25
-5
-0.1
-0.1
-0.1
85
400
Typ
Max
Unit
V
V
V
uA
uA
uA
I
C
= -100uA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100uA, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -20V,I
B
=0
V
EB
= - 3V, I
C
=0
V
CE
= -1V, I
C
= -50mA
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
A,May,2011
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