8ETL06SPbF/8ETL06-1PbF
Vishay High Power Products
Ultralow V
F
Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
TM
8ETL06SPbF
8ETL06-1PbF
FEATURES
•
•
•
•
•
•
Benchmark ultralow forward voltage drop
Hyperfast recovery time
Low leakage current
175 °C operating junction temperature
Lead (Pb)-free (“PbF” suffix)
Designed and qualified for Q101 level
Available
RoHS*
COMPLIANT
Base
cathode
2
2
DESCRIPTION
State of the art, ultralow V
F
, soft-switching hyperfast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge and
low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
V
F
(typical)
I
F(AV)
V
R
0.96 V
8A
600 V
APPLICATIONS
AC-DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC-DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
8
175
16
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
0.96
0.81
0.05
20
17
8.0
MAX.
-
1.05
0.86
5
100
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94029
Revision: 21-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
8ETL06SPbF/8ETL06-1PbF
Vishay High Power Products
Ultralow V
F
Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 8 A, dI
F
/dt = 100 A/µs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/µs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
60
150
170
250
15
20
1.3
2.6
MAX.
100
250
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
µC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.4
-
0.5
2.0
0.07
-
MAX.
175
2
70
-
-
-
12
(10)
8ETL06S
8ETL06-1
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94029
Revision: 21-May-08
8ETL06SPbF/8ETL06-1PbF
Ultralow V
F
Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
TM
100
Vishay High Power Products
100
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
10
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1
1
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
0.1
0.01
T
J
= 25 °C
0.1
0.4
0.8
1.2
1.6
2.0
0.001
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94029
Revision: 21-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
8ETL06SPbF/8ETL06-1PbF
Vishay High Power Products
180
Ultralow V
F
Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
TM
450
400
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
175
350
170
300
t
rr
(ns)
250
200
150
100
50
I
F
= 16 A
I
F
= 8 A
1000
165
DC
160
155
See note (1)
150
0
2
4
6
8
10
12
14
Square
wave
(D = 0.50)
Rated
V
R
applied
0
100
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
12
RMS limit
5000
4500
4000
I
F
= 16 A
I
F
=
8
A
Average Power Loss (W)
10
8
3500
Q
rr
(nC)
6
4
2
0
0
2
4
6
8
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
3000
2500
2000
1500
1000
V
R
= 390
V
T
J
= 125 °C
T
J
= 25 °C
1000
10
12
500
100
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94029
Revision: 21-May-08
8ETL06SPbF/8ETL06-1PbF
Ultralow V
F
Hyperfast Rectifier for
Discontinuous Mode PFC, 8 A FRED Pt
TM
V
R
= 200
V
Vishay High Power Products
0.01
Ω
L = 70
µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point
where
a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area
under
curve defined
by
t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94029
Revision: 21-May-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
