UNISONIC TECHNOLOGIES CO., LTD
9012
PNP SILICON EPITAXIAL TRANSISTOR
1W OUTPUT AMPLIFIER OF
POTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION
FEATURES
1
TO-92
*High total power dissipation. (625mW)
*High collector current. (-500mA)
*Excellent hFE linearity
*Complementary to UTC 9013
ORDERING INFORMATION
Ordering Number
Halogen Free
9012G-x-T92-B
9012G-x-T92-K
E: Emitter
C: Collector
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
Lead Free
9012L-x-T92-B
9012L-x-T92-K
Note: Pin Assignment: B: Base
MARKING INFORMATION
PACKAGE
MARKING
TO-92
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QW-R201-029.B
9012
PNP SILICON EPITAXIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
V
CBO
-40
V
Collector-emitter voltage
V
CEO
-20
V
Emitter-base voltage
V
EBO
-5
V
Collector current
I
C
-500
mA
Collector dissipation
P
C
625
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
B
VCBO
B
VCEO
B
VEBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE(on)
TEST CONDITIONS
I
C
=-100μA,I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-3V, I
C
=0
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-10mA
MIN
-40
-20
-5
TYP
MAX UNIT
V
V
V
-100
nA
-100
nA
300
-0.6
-1.2
-0.7
V
V
V
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
64
40
-0.6
120
90
-0.18
-0.95
-0.67
CLASSIFICATION OF h
FE1
RANK
RANGE
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-029.B
9012
PNP SILICON EPITAXIAL TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristic
-50
I
B
=-250μA
DC Current Gain
1000
500
DC Current Gain ,h
FE
300
V
CE
=-1V
Collector Current, I
C
(mA)
-40
-30
-20
-10
0
I
B
=-200μA
I
B
=-150μA
I
B
=-100μA
100
50
30
I
B
=-500μA
0
-10
-20
-30
-40
-50
10
-10
-30 -50 -100
-300 -500 -1000
Collector-Emitter Voltage, V
CE
(V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
BE(sat)
Collector Current, I
C
(mA)
Current Gain Bandwidth Product
Current Gain Bandwidth Paoduct ,f
T
(MHz)
1000
500
300
100
50
30
10
5
3
1
-1
-3-5 -10
Collector Current, I
C
(mA)
V
CE
=-6V
-1000
Saturation Voltage ,V
BE(sat)
, V
CE(sat)
-500
-300
-100
-50
-30
V
CE(sat)
I
C
=10I
B
-10
-10
-30 -50 -100
-300 -500 -1000
Collector Current, I
C
(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-029.B
