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933624760133

0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
NXP(恩智浦)
零件包装代码
DO-34
包装说明
HERMETIC SEALED, GLASS PACKAGE-2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-34
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
125 °C
最大输出电流
0.2 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大重复峰值反向电压
30 V
最大反向恢复时间
0.004 µs
表面贴装
NO
技术
SCHOTTKY
端子面层
PURE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
BAT85
Schottky barrier diode
Product specification
Supersedes data of 1996 Mar 20
2000 May 25
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass
package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
BAT85
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
k
handbook, halfpage
a
MAM193
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
F(AV)
PARAMETER
continuous reverse voltage
continuous forward current
average forward current
CONDITIONS
PCB mounting, lead length = 4 mm;
V
RWM
= 25 V; a = 1.57;
δ
= 0.5;
T
amb
= 50
°C;
see Fig.2
t
p
1 s;
δ
0.5
t
p
10 ms
−65
−65
MIN.
MAX.
30
200
200
V
mA
mA
UNIT
I
FRM
I
FSM
T
stg
T
j
T
amb
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
300
5
+150
125
+125
mA
A
°C
°C
°C
2000 May 25
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; see Fig.4
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.6
f = 1 MHz; V
R
= 1 V; see Fig.5
240
320
400
500
800
2
4
CONDITIONS
MAX.
BAT85
UNIT
mV
mV
mV
mV
mV
µA
ns
C
d
diode capacitance
10
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD68 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
320
UNIT
K/W
2000 May 25
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
BAT85
MRA540
250
handbook, halfpage
I F(AV)
(mA)
200
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
MLD358
150
10
100
(1)
(2) (3)
1
50
0
0
50
100
Tamb ( C)
o
150
10
−1
0
0.4
0.8
VF (V)
1.2
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Fig.2 Derating curve.
Forward current as a function of forward
voltage; typical values.
MGC682
MGC681
10
5
handbook, halfpage
IR
(nA)
10
4
handbook, halfpage
12
(1)
d
(pF)
C
10
3
(2)
10
2
8
10
4
1
(3)
10
−1
0
0
10
20
VR (V)
30
0
10
20
V
R
(V)
30
(1) T
amb
= 85
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−40 °C.
f = 1 MHz.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
4
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2000 May 25
Philips Semiconductors
Product specification
Schottky barrier diode
BAT85
handbook, halfpage
I
F
dI F
dt
10% t
Qr
90%
IR
tf
MRC129 - 1
Fig.6 Reverse recovery definitions.
2000 May 25
5
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参数对比
与933624760133相近的元器件有:933624760116、933624760113、BAT85/A52A、BAT85/A52R、933624760112、933624760153、BAT85AMO。描述及对比如下:
型号 933624760133 933624760116 933624760113 BAT85/A52A BAT85/A52R 933624760112 933624760153 BAT85AMO
描述 0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2 DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 0.2A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2 0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2 0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2 DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 0.2A, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
零件包装代码 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34
包装说明 HERMETIC SEALED, GLASS PACKAGE-2 O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2
针数 2 2 2 2 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34 DO-34
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
元件数量 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最大输出电流 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
封装主体材料 GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大反向恢复时间 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
表面贴装 NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
是否Rohs认证 符合 符合 符合 - - 符合 - 符合
JESD-609代码 e3 e3 e3 - - e3 - e3
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C - 125 °C
峰值回流温度(摄氏度) 260 NOT SPECIFIED 260 - - NOT SPECIFIED - NOT SPECIFIED
端子面层 PURE TIN TIN PURE TIN - - TIN - Matte Tin (Sn)
处于峰值回流温度下的最长时间 30 NOT SPECIFIED 30 - - NOT SPECIFIED - NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1 -
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