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934051630113

DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
厂商名称
NXP(恩智浦)
包装说明
E-LALF-W2
针数
2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
E-LALF-W2
元件数量
1
端子数量
2
最大输出电流
0.05 A
封装主体材料
GLASS
封装形状
ELLIPTICAL
封装形式
LONG FORM
认证状态
Not Qualified
最大重复峰值反向电压
2000 V
最大反向恢复时间
5 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX132G
High-voltage car ignition diode
Product specification
Supersedes data of 2000 Feb 29
2001 Oct 02
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
k
handbook, halfpage
a
MBK909
BYX132G
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AB2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
The BYX132G is marked with a red cathode band on the
body.
Fig.1 Simplified outline (SOD61AB2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
RWM
I
F(AV)
I
FRM
I
RSM
T
stg
T
j
T
j
PARAMETER
repetitive peak reverse voltage
crest working reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak reverse current
storage temperature
junction temperature
junction temperature
continuous
max. 30 min.
t = 100
µs
triangular pulse;
T
j max
prior to surge
CONDITIONS
−65
MIN.
2
2
50
500
50
+200
175
200
MAX.
UNIT
kV
kV
mA
mA
mA
°C
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche breakdown voltage
reverse current
CONDITIONS
I
F
= 10 mA
I
R
= 100
µA
V
R
= V
RWMmax
; T
j
= 175
°C
MIN.
2.5
2.6
MAX.
3.5
3.7
30
V
kV
µA
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
= T
leads
; lead length = 10 mm
VALUE
90
UNIT
K/W
2001 Oct 02
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
BYX132G
SOD61AB2
k
(1)
a
b
D
L
G
L
DIMENSIONS (mm are the original dimensions)
UNIT
mm
b
0.6
D
max.
2.5
G
max.
5.5
L
min.
31.8
0
2.5
scale
5 mm
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
SOD61AB2
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-04
2001 Oct 02
3
Philips Semiconductors
Product specification
High-voltage car ignition diode
DATA SHEET STATUS
DATA SHEET STATUS
(1)
Objective data
PRODUCT
STATUS
(2)
Development
DEFINITIONS
BYX132G
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 02
4
Philips Semiconductors
Product specification
High-voltage car ignition diode
NOTES
BYX132G
2001 Oct 02
5
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参数对比
与934051630113相近的元器件有:BYX132GT/R、BYX132G。描述及对比如下:
型号 934051630113 BYX132GT/R BYX132G
描述 DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.05 A, 2000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SOD-61AB2, 2 PIN, Signal Diode
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
包装说明 E-LALF-W2 E-LALF-W2 E-LALF-W2
针数 2 2 2
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 E-LALF-W2 E-LALF-W2 E-LALF-W2
元件数量 1 1 1
端子数量 2 2 2
最大输出电流 0.05 A 0.05 A 0.05 A
封装主体材料 GLASS GLASS GLASS
封装形状 ELLIPTICAL ELLIPTICAL ELLIPTICAL
封装形式 LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 2000 V 2000 V 2000 V
表面贴装 NO NO NO
端子形式 WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL
其他特性 - LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
技术 - AVALANCHE AVALANCHE
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