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935269752512

CBT/FST/QS/5C/B SERIES, DUAL 12-BIT DRIVER, TRUE OUTPUT, PDSO56, PLASTIC, SOT-371-1, SSOP3-56

器件类别:逻辑    逻辑   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
包装说明
SSOP,
Reach Compliance Code
unknow
系列
CBT/FST/QS/5C/B
JESD-30 代码
R-PDSO-G56
JESD-609代码
e4
长度
18.425 mm
逻辑集成电路类型
BUS DRIVER
位数
12
功能数量
2
端口数量
2
端子数量
56
最高工作温度
85 °C
最低工作温度
-40 °C
输出特性
3-STATE
输出极性
TRUE
封装主体材料
PLASTIC/EPOXY
封装代码
SSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, SHRINK PITCH
传播延迟(tpd)
0.25 ns
座面最大高度
2.8 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
NICKEL PALLADIUM GOLD
端子形式
GULL WING
端子节距
0.635 mm
端子位置
DUAL
宽度
7.5 mm
Base Number Matches
1
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INTEGRATED CIRCUITS
CBTD16211
24-bit level shifting bus exchange switch
with 12-bit output enables
Product data
2001 Jun 13
Philips
Semiconductors
Philips Semiconductors
Product data
24-bit level shifting bus exchange switch
with 12-bit output enables
CBTD16211
FEATURES
5Ω switch connection between two ports
TTL compatible control input levels
Designed to be used in level shifting applications
Package options include shrink small outline (SSOP) and
thin shrink small outline (TSSOP)
DESCRIPTION
The CBTD16211 provides 24 bits of high-speed TTL-compatible bus
switching. The low on-state resistance of the switch allows
connections to be made with minimal propagation delay.
A diode to V
CC
is integrated in the circuit to allow for level shifting
between 5 V inputs and 3.3 V outputs.
The device is organized as a dual 12-bit bus switch with separate
output-enable (OE) inputs. It can be used as two 10-bit bus switches
or as one 20-bit bus switch. When OE is low, the associated 10-bit
bus switch is on, and port A is connected to port B. When OE is
high, the switch is open, and a high-impedance state exists between
the ports.
The CBTD16211 is characterized for operation from –40 to +85
°C.
ESD protection exceeds 1000 V CDM per JESD22-C101
Latch-up testing is done to JESDEC Standard JESD78 which
exceeds 100 mA
QUICK REFERENCE DATA
SYMBOL
t
PLH
t
PHL
C
IN
C
OUT
I
CC
PARAMETER
Propagation delay
An to Yn
Input capacitance
Output capacitance
Total supply current
CONDITIONS
T
amb
= 25
°C;
GND = 0 V
C
L
= 50 pF; V
CC
= 5 V
V
I
= 0 V or V
CC
Outputs disabled; V
O
= 0 V or V
CC
Outputs disabled; V
CC
= 5.5 V
TYPICAL
0.25
4.3
6.9
3.0
UNIT
ns
pF
pF
µA
ORDERING INFORMATION
PACKAGES
56-Pin Plastic SSOP Type III
56-Pin Plastic TSSOP Type II
TEMPERATURE RANGE
–40 to +85
°C
–40 to +85
°C
ORDER CODE
CBTD16211DL
CBTD16211DGG
DWG NUMBER
SOT371-1
SOT364-1
FUNCTION TABLE
INPUTS
1OE
L
L
H
H
2OE
L
H
L
H
OUTPUTS
1A, 1B
1A = 1B
1A = 1B
Z
Z
2A, 2B
2A = 2B
LOGIC SYMBOL
2
1A1
54
1B1
14
42
1B12
Z
2A = 2B
Z
1A12
H = High voltage level
L = Low voltage level
Z = High impedance “off ” state
56
1OE
15
2A1
41
2B1
28
2A12
29
2B12
55
2OE
SA00510
2001 Jun 13
2
853-2260 26502
Philips Semiconductors
Product data
24-bit level shifting bus exchange switch
with 12-bit output enables
CBTD16211
PIN CONFIGURATION
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NC
1OE, 2OE
1A1-1A12
1B1-1B12
2A1-2A12
2B1-2B12
GND
V
CC
NAME AND FUNCTION
No internal connection
Output enables
Inputs
Outputs
Inputs
Outputs
Ground (0 V)
Positive supply voltage
1
56, 55
2, 3, 4, 5, 6, 7, 9, 10,
11, 12, 13, 14
54, 53, 52, 51, 50, 48,
47, 46, 45, 44, 43, 42
15, 16, 18, 20, 21, 22,
23, 24, 25, 26, 27, 28
41, 40, 39, 37, 36, 35,
34, 33, 32, 31, 30, 29
8, 19, 38, 49
17
NC
1A1
1A2
1A3
1A4
1A5
1A6
GND
1A7
1
2
3
4
5
6
7
8
9
56 1OE
55 2OE
54 1B1
53 1B2
52 1B3
51 1B4
50 1B5
49 GND
48 1B6
47 1B7
46 1B8
45 1B9
44 1B10
43 1B11
42 1B12
41 2B1
40 2B2
39 2B3
38 GND
37 2B4
36 2B5
35 2B6
34 2B7
33 2B8
32 2B9
31 2B10
30 2B11
29 2B12
1A8 10
1A9 11
1A10 12
1A11 13
1A12 14
2A1 15
2A2 16
V
CC
17
2A3 18
GND 19
2A4 20
2A5 21
2A6 22
2A7 23
2A8 24
2A9 25
2A10 26
2A11 27
2A12 28
SA00509
2001 Jun 13
3
Philips Semiconductors
Product data
24-bit level shifting bus exchange switch
with 12-bit output enables
CBTD16211
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
V
CC
I
IK
V
I
V
OUT
I
OUT
T
stg
PARAMETER
DC supply voltage
DC input diode current
DC input voltage
3
DC output voltage
3
DC output current
Storage temperature range
output in Off or High state
output in Low state
V
I
< 0
CONDITIONS
RATING
–0.5 to +7.0
–50
–0.5 to +7.0
–0.5 to +5.5
128
–65 to +150
UNIT
V
mA
V
V
mA
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
IH
V
IL
T
amb
DC supply voltage
High-level input voltage
Low-level Input voltage
Operating free-air temperature range
PARAMETER
Min
4.5
2.0
–40
Max
5.5
0.8
+85
UNIT
V
V
V
°C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= –40 to +85
°C
Min
V
IK
V
OH
I
I
I
CC
∆I
CC
C
I
C
I(OFF)
r
on3
Input clamp voltage
Output high pass voltage
Input leakage current
Quiescent supply current
Additional supply current per
input pin
2
Control pins
Port OFF capacitance
V
CC
= 4.5 V; I
I
= –18 mA
See Figure 1
V
CC
= 0 V; V
I
= 5.5 V
V
CC
= 5.5 V; V
I
= GND or 5.5 V
V
CC
= 5.5 V; I
O
= 0, V
I
= V
CC
or GND;
1OE=2OE=GND
V
CC
= 5.5 V, one input at 3.4 V,
other inputs at V
CC
or GND
V
I
= 3 V or 0
V
O
= 3 V or 0, OE = V
CC
V
CC
= 4.5 V; V
1
= 0 V; I
I
= 64 mA
V
CC
= 4.5 V; V
1
= 0 V; I
I
= 30 mA
V
CC
= 4.5 V; V
1
= 2.4 V; I
I
= –15 mA
Typ
1
4.5
8
5
5
35
10
±1
1.5
2.5
7
7
50
Max
–1.2
V
V
µA
mA
mA
pF
pF
UNIT
NOTES:
1. All typical values are at V
CC
= 5 V, T
amb
= 25
°C.
2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than V
CC
or GND.
3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch.
On-state resistance is determined by the lowest voltage of the two (A or B) terminals.
2001 Jun 13
4
Philips Semiconductors
Product data
24-bit level shifting bus exchange switch
with 12-bit output enables
CBTD16211
AC CHARACTERISTICS
GND = 0 V; t
R;
C
L
= 50 pF
V
CC
= 5.0 V
±0.5
V
Min
t
pd
t
en
t
dis
Propagation delay
1
Output enable time
to High and Low level
Output disable time
from High and Low level
A or B
OE
OE
B or A
A or B
A or B
1.5
1.5
Max
0.25
8.5
7
ns
ns
ns
SYMBOL
PARAMETER
FROM
(INPUT)
TO
(OUTPUT)
UNIT
NOTE:
1. This parameter is warranted but not production tested. The propagation delay is based on the RC time constant of the typical on-state
resistance of the switch and a load capacitance of 50 pF, when driven by an ideal voltage source (zero output impedance).
2001 Jun 13
5
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参数对比
与935269752512相近的元器件有:935269752518。描述及对比如下:
型号 935269752512 935269752518
描述 CBT/FST/QS/5C/B SERIES, DUAL 12-BIT DRIVER, TRUE OUTPUT, PDSO56, PLASTIC, SOT-371-1, SSOP3-56 CBT/FST/QS/5C/B SERIES, DUAL 12-BIT DRIVER, TRUE OUTPUT, PDSO56, PLASTIC, SOT-371-1, SSOP3-56
包装说明 SSOP, SSOP,
Reach Compliance Code unknow unknown
系列 CBT/FST/QS/5C/B CBT/FST/QS/5C/B
JESD-30 代码 R-PDSO-G56 R-PDSO-G56
JESD-609代码 e4 e4
长度 18.425 mm 18.425 mm
逻辑集成电路类型 BUS DRIVER BUS DRIVER
位数 12 12
功能数量 2 2
端口数量 2 2
端子数量 56 56
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
输出特性 3-STATE 3-STATE
输出极性 TRUE TRUE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SSOP SSOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH
传播延迟(tpd) 0.25 ns 0.25 ns
座面最大高度 2.8 mm 2.8 mm
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
端子形式 GULL WING GULL WING
端子节距 0.635 mm 0.635 mm
端子位置 DUAL DUAL
宽度 7.5 mm 7.5 mm
Base Number Matches 1 1
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