JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015
TRANSISTOR (PNP)
TO-92
1.EMITTER
FEATURES
Power dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
400
125
-55-125
Unit
V
V
V
mA
mW
℃
℃
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Cob
NF
Test
conditions
Min
-50
-50
-5
-0.1
-0.1
-0.1
70
400
-0.3
-1.1
80
7
6
V
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= -100μA, I
E
=0
I
C
= -0. 1mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -50V,I
E
=0
V
CE
= -50V, I
B
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -2mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10 V, I
C
= -1mA
f =30MHz
V
CB
=-10V,I
E
=0,f=1MHZ
V
CE
= -6 V, I
C
= -0.1mA,
f =1KHz,R
G
=10K
CLASSIFICATION
Rank
Range
OF
h
FE
O
70-140
Y
120-240
GR
200-400
A,May,2011
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