Freescale Semiconductor
Technical Data
Document Number: A2I25H060N
Rev. 0, 1/2016
RF LDMOS Wideband Integrated
Power Amplifiers
The A2I25H060N wideband integrated circuit is an asymmetrical Doherty
d e s i g n e d w i t h o n -- c h i p m a t c h i n g t h a t m a k e s i t u s a b l e f r o m 2 3 0 0 t o
2690 MHz. This multi--stage structure is rated for 20 to 32 V operation and
covers all typical cellular base station modulation formats.
2600 MHz
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 28 Vdc, I
DQ1A
= 26 mA, I
DQ2A
= 163 mA, V
GS1B
= 1.7 Vdc,
V
GS2B
= 1.3 Vdc, P
out
= 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
Frequency
2496 MHz
2590 MHz
2690 MHz
G
ps
(dB)
27.1
27.5
27.1
PAE
(%)
40.9
40.9
39.4
ACPR
(dBc)
–31.5
–34.0
–34.7
A2I25H060NR1
A2I25H060GNR1
2300–2690 MHz, 10.5 W AVG., 28 V
AIRFAST RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO-
-270WB-
-17
PLASTIC
A2I25H060NR1
2300 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ1A
= 28 mA, I
DQ2A
= 177 mA, V
GS1B
= 1.8 Vdc, V
GS2B
= 1.3 Vdc,
P
out
= 10.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF.
(1)
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
26.7
27.0
27.1
PAE
(%)
38.9
38.9
39.0
ACPR
(dBc)
–33.7
–34.8
–34.7
TO-
-270WBG-
-17
PLASTIC
A2I25H060GNR1
Features
Advanced High Performance In--Package Doherty
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(2)
Designed for Digital Predistortion Error Correction Systems
1. All data measured in fixture with device soldered to heatsink.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family,
and to AN1987,
Quiescent Current
Control for the RF Integrated Circuit Device Family.
Go to
http://www.nxp.com/RF
and search for AN1977 or AN1987.
Freescale Semiconductor, Inc., 2016. All rights reserved.
A2I25H060NR1 A2I25H060GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
V
DS1A
RF
inA
VBW
A
RF
out1
/V
DS2A
V
GS1A
V
GS2A
V
GS1B
V
GS2B
Quiescent Current
Temperature Compensation
(1)
Quiescent Current
Temperature Compensation
(1)
V
DS1A
V
GS2A
V
GS1A
RF
inA
N.C.
GND
GND
N.C.
RF
inB
V
GS1B
V
GS2B
V
DS1B
1
2
3
4
5
6
7
8
9
10
11
12
Carrier
17
16
VBW
A
(2)
RF
out1
/V
DS2A
GND
RF
out2
/V
DS2B
VBW
B
(2)
15
14
13
Peaking
(Top View)
RF
inB
V
DS1B
RF
out2
/V
DS2B
VBW
B
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated
Circuit Family,
and to AN1987,
Quiescent Current Control for the RF Integrated Circuit
Device Family.
Go to
http://www.nxp.com/RF
and search for AN1977 or AN1987.
Figure 2. Pin Connections
2. Device can operate with V
DD
current
supplied through pin 13 and pin 17.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(3,4)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
–0.5, +65
–0.5, +10
32, +0
–65 to +150
–40 to +150
–40 to +225
22
Unit
Vdc
Vdc
Vdc
C
C
C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77C, 10.5 W Avg., 2590 MHz
Stage 1, 28 Vdc, I
DQ1A
= 30 mA, V
G1A
= 3.5 Vdc, V
G1B
= 1.7 Vdc
Stage 2, 28 Vdc, I
DQ2A
= 190 mA, V
G2A
= 3.65 Vdc, V
G2B
= 1.3 Vdc
Symbol
R
JC
5.6
2.2
Value
(4,5)
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
II
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.nxp.com/RF/calculators.
5. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
A2I25H060NR1 A2I25H060GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Carrier Stage 1 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.0 Vdc, V
DS
= 0 Vdc)
Carrier Stage 1 - On Characteristics
-
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 4
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1A
= 26 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1A
= 26 mAdc, Measured in Functional Test)
Carrier Stage 2 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.0 Vdc, V
DS
= 0 Vdc)
Carrier Stage 2 - On Characteristics
-
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 26
Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
= 174 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
= 174 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 350 mAdc)
1. Each side of device measured separately.
(continued)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
0.8
—
2.9
0.1
1.2
1.7
3.6
0.22
1.6
—
4.4
1.5
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
V
GS(th)
V
GS(Q)
V
GG(Q)
0.8
—
2.9
1.2
2.0
3.5
1.6
—
4.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Peaking Stage 1 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.0 Vdc, V
DS
= 0 Vdc)
Peaking Stage 1 - On Characteristics
(1)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 8
Adc)
Peaking Stage 2 - Off Characteristics
(1)
-
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.0 Vdc, V
DS
= 0 Vdc)
Peaking Stage 2 - On Characteristics
(1)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 42
Adc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 565 mAdc)
1. Each side of device measured separately.
(continued)
V
GS(th)
V
DS(on)
0.8
0.1
1.2
0.22
1.6
1.5
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
V
GS(th)
0.8
1.2
1.6
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
A2I25H060NR1 A2I25H060GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= 26 mA, I
DQ2A
= 174 mA,
V
GS1B
= 1.7 Vdc, V
GS2B
= 1.3 Vdc, P
out
= 10.5 W Avg., f = 2590 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
P
out
@ 3 dB Compression Point
G
ps
PAE
ACPR
P3dB
24.6
37.5
—
38.9
26.1
40.4
–31.6
48.2
28.0
—
–28.0
—
dB
%
dBc
W
Load Mismatch
(2)
(In Freescale Doherty Production Test Fixture, 50 ohm system) I
DQ1A
= 26 mA, I
DQ2A
= 174 mA, V
GS1B
= 1.7 Vdc,
V
GS2B
= 1.3 Vdc, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 55 W CW Output Power
(3 dB Input Overdrive from 36 W CW Rated Power)
No Device Degradation
Typical Performance
(2)
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= 26 mA,
I
DQ2A
= 163 mA, V
GS1B
= 1.7 Vdc, V
GS2B
= 1.3 Vdc, 2496–2690 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across
the 2496–2690 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(5)
with 2 k Gate Feed Resistors (–30 to 85C) Stage 1
with 2 k Gate Feed Resistors (–30 to 85C) Stage 2
Gain Flatness in 194 MHz Bandwidth @ P
out
= 10.5 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P1dB
P3dB
—
—
—
52
57
–27.2
—
—
—
W
W
VBW
res
I
QT
—
180
—
MHz
%
—
—
—
—
—
4.76
2.33
0.312
0.030
0.006
—
—
—
—
—
dB
dB/C
dB/C
G
F
G
P1dB
Table 6. Ordering Information
Device
A2I25H060NR1
A2I25H060GNR1
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
TO--270WB--17
TO--270WBG--17
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
5. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family,
and to AN1987,
Quiescent Current
Control for the RF Integrated Circuit Device Family.
Go to
http://www.nxp.com/RF
and search for AN1977 or AN1987.
A2I25H060NR1 A2I25H060GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
