JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
A42
TRANSISTOR (NPN)
1. BASE
FEATURES
Low Collector-Emitter Saturation Voltage
High Breakdown Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
310
305
5
500
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
Min
310
305
5
0.25
0.25
5
0.1
60
80
75
0.2
0.9
50
V
V
MHz
250
Typ
Max
Unit
V
V
V
µA
µA
µA
µA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=200V,I
E
=0
V
CE
=200V,I
B
=0
V
CE
=300V,I
B
=0
V
EB
=5V,I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA,I
B
=2mA
I
C
=20mA,I
B
=2mA
V
CE
=20V,I
C
=10mA, f=30MHz
Emitter cut-off current
CLASSIFICATION OF
h
FE
（
2
）
RANK
RANGE
MARKING
A
80–100
B1
100–150
A42
B2
150–200
C
200–250
A,Nov,2010
电子工程世界
