JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
A44
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
Low Collector-Emitter Saturation Voltage
High Breakdown Voltage
MARKING: A44
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-Continuous
Collector Current
-Pulsed
Collector Power Dissipation
Thermal Resistance
from
Junction
to
Ambient
Junction Temperature
Storage Temperature
Value
400
400
6
200
300
500
250
150
-55~+150
Unit
V
V
V
mA
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
h
FE(3)
*
h
FE(4)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
V
CE(sat)
*
V
BE(sat)
*
C
ob
C
ib
*
T est conditions
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=400V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA,I
B
=0.1mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
Min
400
400
6
Typ
Max
Unit
V
V
V
V
(BR)EBO
0.1
0.1
40
50
45
40
0.4
0.5
0.75
0.75
7
130
200
µA
µA
V
V
V
V
pF
pF
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
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E,Nov
,2015
Typical Characteristics
h
FE
—— I
C
V
CE
= 10V
h
FE
35
Static Characteristic
200uA
180uA
COMMON
EMITTER
T
a
=25
℃
1000
(mA)
30
COLLECTOR CURRENT
20
140uA
120uA
DC CURRENT GAIN
25
I
C
160uA
T
a
=100 C
o
100
T
a
=25 C
o
15
100uA
80uA
60uA
40uA
I
B
=20uA
10
5
0
0
5
10
15
20
25
10
1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
10
I
C
(mA)
100
300
1000
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
250
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
200
800
T
a
=25
℃
150
600
T
a
=100
℃
100
400
T
a
=100
℃
50
T
a
=25
℃
β=10
200
1
10
100
300
0
1
10
100
300
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
300
I
C
——
V
BE
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
250
(pF)
C
ib
100
T
a
=25 C
o
COLLECTOR CURRENT
150
T
a
=100 C
o
100
T
a
=25
℃
CAPACITANCE
C
200
10
50
C
ob
V
CE
=10V
0
200
400
600
800
1000
1
0.1
1
10
BASE-EMITTER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
20
0.75
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(W)
0.50
0.25
0.00
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
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E,Nov
,2015
SOT-89-3L Package Outline Dimensions
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
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3
E,Nov
,2015
SOT-89-3L Tape and Reel
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4
E,Nov
,2015
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