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A67L83361E-6.5

ZBT SRAM, 256KX36, 6.5ns, CMOS, PQFP100, LQFP-100

器件类别:存储    存储   

厂商名称:AMICC [AMIC TECHNOLOGY]

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器件参数
参数名称
属性值
是否Rohs认证
不符合
包装说明
LQFP, QFP100,.63X.87
Reach Compliance Code
unknown
最长访问时间
6.5 ns
最大时钟频率 (fCLK)
133 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
长度
20 mm
内存密度
9437184 bit
内存集成电路类型
ZBT SRAM
内存宽度
36
功能数量
1
端子数量
100
字数
262144 words
字数代码
256000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
256KX36
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
电源
3.3 V
认证状态
Not Qualified
座面最大高度
1.6 mm
最大待机电流
0.02 A
最小待机电流
3.14 V
最大压摆率
0.18 mA
最大供电电压 (Vsup)
3.465 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
Base Number Matches
1
文档预览
A67L93181/A67L83361
512K X 18, 256K X 36 LVTTL, Flow-through ZeBL
TM
SRAM
Document Title
512K X 18, 256K X 36 LVTTL, Flow-through ZeBL
TM
SRAM
Revision History
Rev. No.
0.0
0.1
1.0
History
Initial issue
Modify DC specification to exact value
Modify SPEED specification from Cycle Time to Access Time
Final version release
Issue Date
July 13, 2005
March 2, 2006
September 12, 2006
Remark
Preliminary
(September, 2006, Version 1.0)
AMIC Technology, Corp.
A67L93181/A67L83361
512K X 18, 256K X 36 LVTTL, Flow-through ZeBL
TM
SRAM
Features
Fast access time: 6.5/7.5/8.5 ns
(153, 133, 117 MHz)
Zero Bus Latency between READ and WRITE cycles
allows 100% bus utilization
Signal +3.3V
±
5% power supply
Individual Byte Write control capability
Clock enable (
CEN
) pin to enable clock and suspend
operations
Clock-controlled and registered address, data and
control signals
Registered output for pipelined applications
Three separate chip enables allow wide range of options
for CE control, address pipelining
Internally self-timed write cycle
Selectable BURST mode (Linear or Interleaved)
SLEEP mode (ZZ pin) provided
Available in 100 pin LQFP package
General Description
The AMIC Zero Bus Latency (ZeBL
TM
) SRAM family
employs high-speed, low-power CMOS designs using an
advanced CMOS process.
The A67L93181, A67L83361 SRAMs integrate a 512K X
18, 256K X 36 SRAM core with advanced synchronous
peripheral circuitry and a 2-bit burst counter. These SRAMs
are optimized for 100 percent bus utilization without the
insertion of any wait cycles during Write-Read alternation.
The positive edge triggered single clock input (CLK)
controls all synchronous inputs passing through the
registers. The synchronous inputs include all address, all
data inputs, active low chip enable (
CE
), two additional chip
enables for easy depth expansion (CE2,
CE2
), cycle start
input (ADV/
LD
), synchronous clock enable (
CEN
), byte
write enables (
BW1
,
BW2
,
BW3
,
BW4
) and read/write
(R/
W
).
Asynchronous inputs include the output enable (
OE
), clock
(CLK), SLEEP mode (ZZ, tied LOW if unused) and burst
mode (MODE). Burst Mode can provide either interleaved
or linear operation, burst operation can be initiated by
synchronous address Advance/Load (ADV/
LD
) pin in Low
state. Subsequent burst address can be internally
generated by the chip and controlled by the same input pin
ADV/
LD
in High state.
Write cycles are internally self-time and synchronous with
the rising edge of the clock input and when R/
W
is Low.
The feature simplified the write interface. Individual Byte
enables allow individual bytes to be written.
BW1
controls
I/Oa pins;
BW2
controls I/Ob pins;
BW3
controls I/Oc pins;
and
BW4
controls I/Od pins. Cycle types can only be
defined when an address is loaded.
The SRAM operates from a +3.3V power supply, and all
inputs and outputs are LVTTL-compatible. The device is
ideally suited for high bandwidth utilization systems.
(September, 2006, Version 1.0)
1
AMIC Technology, Corp.
A67L93181/A67L83361
Pin Configuration
256K X 36
CE
A6
A7
OE
ADV/
LD
BW4
BW3
BW2
BW1
VCC
CEN
VSS
CLK
CE2
CE2
R/W
A17
NC
A8
A8
82
CEN
OE
ADV/
LD
BW2
BW1
VCC
VSS
CLK
R/W
CE2
CE2
NC
NC
A6
A7
CE
A18
NC
512K X 18
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
I/Oc
8
I/Oc
0
I/Oc
1
VCCQ
VSSQ
I/Oc
2
I/Oc
3
I/Oc
4
I/Oc
5
VSSQ
VCCQ
I/Oc
6
I/Oc
7
VSS
VCC
VCC
VSS
I/Od
0
I/Od
1
VCCQ
VSSQ
I/Od
2
I/Od
3
I/Od
4
I/Od
5
VSSQ
VCCQ
I/Od
6
I/Od
7
I/Od
8
NC
NC
NC
VCCQ
VSSQ
NC
NC
I/Ob
8
I/Ob
7
VSSQ
VCCQ
I/Ob
6
I/Ob
5
VSS
VCC
VCC
VSS
I/Ob
4
I/Ob
3
VCCQ
VSSQ
I/Ob
2
I/Ob
1
I/Ob
0
NC
VSSQ
VCCQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
100
81
A9
A9
80
79
78
77
76
75
74
73
72
71
70
69
68
A10
NC
NC
VCCQ
VSSQ
NC
I/Oa
0
I/Oa
1
I/Oa
2
VSSQ
VCCQ
I/Oa
3
I/Oa
4
VSS
VSS
VCC
ZZ
I/Oa
5
I/Oa
6
VCCQ
VSSQ
I/Oa
7
I/Oa
8
NC
NC
VSSQ
VCCQ
NC
NC
NC
I/Ob
8
I/Ob
7
I/Ob
6
VCCQ
VSSQ
I/Ob
5
I/Ob
4
I/Ob
3
I/Ob
2
VSSQ
VCCQ
I/Ob
1
I/Ob
0
VSS
VSS
VCC
ZZ
I/Oa
7
I/Oa
6
VCCQ
VSSQ
I/Oa
5
I/Oa
4
I/Oa
3
I/Oa
2
VSSQ
VCCQ
I/Oa
1
I/Oa
0
I/Oa
8
A67L93181E
A67L83361E
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A5
A4
A3
A2
A1
A0
A11
A12
A13
A14
A15
A16
A15
MODE MODE
VSS
VCC
A5
A4
A3
A2
A1
A0
A10
A11
A12
A13
A14
VSS
VCC
(September, 2006, Version 1.0)
2
AMIC Technology, Corp.
A16
NC
NC
NC
NC
A17
NC
NC
NC
NC
A67L93181/A67L83361
Block Diagram (256K X 36)
ZZ
MODE
MODE
LOGIC
ADV/LD
CEN
CLK
CLK
LOGIC
BURST
LOGIC
ADDRESS
COUNTER
CLR
A0-A17
ADDRESS
REGISTERS
WRITE
ADDRESS
REGISTER
9
BYTEa
WRITE
DRIVER
9
ADV/LD
R/W
BW1
BW2
BW3
BW4
WRITE
REGISTRY
&
CONTROL
LOGIC
BYTEb
WRITE
DRIVER
BYTEc
WRITE
DRIVER
BYTEd
WRITE
DRIVER
9
9
256KX9X4
MEMORY
SENSE
AMPS
OUTPUT
BUFFERS
I/O
s
9
9
ARRAY
9
9
DATA-IN
REGISTERS
CE
CE2
CE2
CHIP
ENABLE
LOGIC
FLOW-THROUGH
ENABLE
LOGIC
OUTPUT
ENABLE
LOGIC
OE
(September, 2006, Version 1.0)
3
AMIC Technology, Corp.
A67L93181/A67L83361
Block Diagram (512K X 18)
ZZ
MODE
MODE
LOGIC
ADV/LD
CEN
CLK
CLK
LOGIC
BURST
LOGIC
ADDRESS
COUNTER
CLR
A0- A18
ADDRESS
REGISTERS
WRITE
ADDRESS
REGISTER
9
WRITE
REGISTRY
&
CONTROL
LOGIC
BYTEa
WRITE
DRIVER
9
512KX9X2
MEMORY
SENSE
AMPS
OUTPUT
BUFFERS
I/O
S
ADV/LD
R/W
BW1
BW2
9
BYTEb
WRITE
DRIVER
9
ARRAY
DATA-IN
REGISTERS
CE
CE2
CE2
CHIP
ENABLE
LOGIC
FLOW-
THROUGH
ENABLE LOGIC
OUTPUT
ENABLE
LOGIC
OE
(September, 2006, Version 1.0)
4
AMIC Technology, Corp.
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参数对比
与A67L83361E-6.5相近的元器件有:A67L93181E-6.5。描述及对比如下:
型号 A67L83361E-6.5 A67L93181E-6.5
描述 ZBT SRAM, 256KX36, 6.5ns, CMOS, PQFP100, LQFP-100 ZBT SRAM, 512KX18, 6.5ns, CMOS, PQFP100, LQFP-100
是否Rohs认证 不符合 不符合
包装说明 LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87
Reach Compliance Code unknown unknown
最长访问时间 6.5 ns 6.5 ns
最大时钟频率 (fCLK) 133 MHz 133 MHz
I/O 类型 COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100
长度 20 mm 20 mm
内存密度 9437184 bit 9437184 bit
内存集成电路类型 ZBT SRAM ZBT SRAM
内存宽度 36 18
功能数量 1 1
端子数量 100 100
字数 262144 words 524288 words
字数代码 256000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C
组织 256KX36 512KX18
输出特性 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP
封装等效代码 QFP100,.63X.87 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL
电源 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm
最大待机电流 0.02 A 0.02 A
最小待机电流 3.14 V 3.14 V
最大压摆率 0.18 mA 0.2 mA
最大供电电压 (Vsup) 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.65 mm
端子位置 QUAD QUAD
宽度 14 mm 14 mm
Base Number Matches 1 1
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