JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
A92
TRANSISTOR (PNP)
SOT-89
1.
BASE
FEATURES
Power dissipation
P
CM:
0.625
W (Tamb=25℃)
2.
COLLECTOR
3.
EMITTER
1
2
Collector current
-0.5
A
I
CM:
Collector-base voltage
-300
V
V
(BR)CBO:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
3
unless otherwise specified)
conditions
MIN
-300
-300
-5
-0.25
-0.1
60
80
60
-0.2
-0.9
50
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
Test
Ic= -100
µ
A, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
= -200 V, I
E
=0
V
EB
= -5 V, I
C
=0
V
CE
= -10 V, IC=- 1 mA
V
CE
= -10V, I
C
= -10 mA
V
CE
= -10 V, I
C
= -80 mA
I
C
= -20 mA, IB= -2 mA
I
C
= -20 mA, IB= -2 mA
V
CE
= -20 V, IC= -10 mA
µ
A
µ
A
f
T
f =
30MHz
CLASSIFICATION OF h
FE(2)
Rank
Range
Marking
A
80-100
B
1
100-150
A92
B
2
150-200
C
200-250
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