AC10DSMA,AC10FSMA
DESCRIPTION
The AC10DSMA and AC10FSMA are resin insulation type
TRIACs with an effective current of 10 A (T
C
= 85°C).
These products are covered with resin mold on the entire case
and are electrically insulated with electrodes, giving them a
17 ±0.2
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2
4.7 MAX.
φ
3.2 ±0.2
5 ±0.1
3.0 MAX.
2.8 ±0.2
considerable advantage over conventional TRIACs when
mounting on a heatsink board or performing high-density
mounting.
These products features ratings and electrical characteristics
equal to TO-220AB package TRIAC and a high reliability design.
12 ±0.2
1
2 3
*
FEATURES
•
Insulation type TRIAC fully covered with resin on the entire
case other than electrode leads
•
Insulation voltage and conduction equal to conventional mica
and polyester film
•
Can be replaced with TO-220AB package
•
High allowable on-current when using a single unit
0.8 ±0.1
2.54 TYP.
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
13.5 MIN.
5 ±0.2
0.5 ±0.1
2.5 ±0.1
TRIAC
1: T
1
2: T
2
3: Gate
APPLICATIONS
*
: T
C
test bench-mark
Standard weight: 2 g
Non-contact switches of motor speed control, heater temperature control, lamp light control
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AC10DSMA,AC10FSMA
MAXIMUM RATINGS
Parameter
Non-repetitive Peak Off-state Voltage
Repetitive Peak Off-state Voltage
Effective On-state Current
Surge On-state Current
Symbol
V
DSM
V
DRM
I
T(RMS)
I
TSM
AC10DSMA
500
400
10 (T
C
= 85°C)
80 (50 Hz 1 cycle)
88 (60 Hz 1 cycle)
Fusing Current
Critical Rate Rise of On-state Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Junction Temperature
Storage Temperature
AC10FSMA
700
600
Unit
V
V
A
A
Remarks
−
−
Refer to
Figure 11
and
12.
Refer to
Figure 2.
∫
i
T2
dt
dI
T
/dt
P
GM
P
G(AV)
I
GM
T
j
T
stg
28 (1 ms
≤
t
≤
10 ms)
50
5.0 (f
≥
50 Hz, Duty
≤
10%)
0.5
±3 (f
≥
50 Hz, Duty
≤
10%)
−40½+125
−55½+150
As
A/
µ
s
W
W
A
°C
°C
2
−
−
−
−
−
−
−
ELECTRICAL CHARACTERISTICS (T
j
= 25°C)
Parameter
Repetitive Peak Off-state Current
Symbol
I
DRM
Conditions
V
DM
= V
DRM
T
j
= 25°C
T
j
= 125°C
On-state Voltage
Gate Trigger Current
Mode I
II
III
IV
Gate Trigger Voltage
Mode I
II
III
IV
Gate Non-trigger Voltage
Holding Current
Critical Rate Rise of Off-state Voltage
Commutating Critical Rate Rise of
Off-state Voltage
Thermal Resistance
Note
MIN.
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
30
100
−
MAX.
100
2
1.3
20
−
20
20
1.5
−
1.5
1.5
−
−
−
−
Unit
Remarks
−
−
Refer to
Figure 1.
Refer to
Figure 4.
µ
A
mA
V
mA
V
TM
I
GT
I
TM
= 10 A
V
DM
= 12 V,
R
L
= 30
Ω
T
2
+, G+
T
2
−,
G+
T
2
−,
G−
T
2
+, G−
−
−
−
−
−
−
−
−
0.3
−
−
10
V
GT
V
DM
= 12 V,
R
L
= 30
Ω
T
2
+, G+
T
2
−,
G+
T
2
−,
G−
T
2
+, G−
V
Refer to
Figure 4.
V
GD
I
H
dv/dt
T
j
= 125°C, V
DM
=
1
V
DRM
2
V
mA
V
/µ
s
V
/µ
s
−
−
−
−
V
DM
= 24 V, I
TM
= 10 A
T
j
= 125°C, V
DM
=
3
V
DRM
2
(dv/dt)c T
j
= 125°C,
(di
T
/dt)c =
−5
A/ms, V
D
= 400 V
R
th(j-c)
Junction-to-case AC
−
−
3.5
°C/W Refer to
Figure 13.
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AC10DSMA,AC10FSMA
TYPICAL CHARACTERISTICS
Figure 1. i
T
vs.
½
T
CHARACTERISTIC
100
50
MAX.
Figure 2. I
TSM
RATING
140
Initial T
j
= 125˚C
I
TSM
0
π
N=1
2
π
I
TSM
- Surge On-state Current - A
i
T
- On-state Current - A
120
100
80
60
40
20
0
10
T
C
= 125˚C
5
60 Hz
50 Hz
25˚C
1.0
0.5
0.1
0
1
2
3
4
5
1
5
10
50
100
½
T
- On-state Voltage - V
Cycles - N
Figure 3. GATE RATING
10
T
j
=
−40
to +125˚C
Figure 4. GATE CHARACTERISTIC
2.0
Mode
I, III, IV
8
V
GT
- Gate Trigger Voltage - V
V
G
- Gate Voltage - V
1.5
25˚C
−40˚C
125˚C
6
P
GM
= 5 W
f
≥
50 Hz
Duty
≤
10%
1.0
4
2
P
G(AV)
= 0.5 W
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
10
20
30
40
I
G
- Gate Current - A
I
GT
- Gate Trigger Current - mA
Figure 5. I
GT
vs. T
A
CHARACTERISTIC
1000
Mode
I, III, IV
Figure 6. V
GT
vs. T
A
CHARACTERISTIC
1.4
Mode
I, III, IV
I
GT
- Gate Trigger Current - mA
V
GT
- Gate Trigger Voltage - V
−40
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
1
0
40
80
120
−40
0
40
80
120
T
A
- Ambient Temperature - °C
T
A
- Ambient Temperature - °C
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AC10DSMA,AC10FSMA
Figure 7. i
GT
vs.
τ
CHARACTERISTIC
10000
Figure 8.
½
GT
vs.
τ
CHARACTERISTIC
5
Mode
I, III, IV
T
A
= 25˚C
i
GT
- Gate Trigger Current - mA
½
GT
- Gate Trigger Voltage - V
Mode
I, III, IV
T
A
= 25˚C
4
1000
3
100
2
10
1
1
1
10
100
1000
0
1
10
100
1000
τ
- Pulse Width -
µ
s
τ
- Pulse Width -
µ
s
Figure 9. I
H
vs. T
A
CHARACTERISTIC
1000
Figure 10. P
T(AV)
vs. I
T(RMS)
CHARACTERISTIC
P
T(AV)
- On-state Average Power Dissipation - W
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12
I
H
- Holding Current - mA
100
10
1
−20
0
20
40
60
80
100
120
T
A
- Ambient Temperature - °C
I
T(RMS)
- Effective On-state Current - A
Figure 11. T
C
vs. I
T(RMS)
RATING
140
140
Figure 12. T
A
vs. I
T(RMS)
RATING
T
C
- Case Temperature - °C
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10 11 12
T
A
- Ambient Temperature - °C
120
100
80
60
40
20
0
0
1.0
2.0
I
T(RMS)
- Effective On-state Current - A
I
T(RMS)
- Effective On-state Current - A
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AC10DSMA,AC10FSMA
Figure 13. Z
th
CHARACTERISTIC
100
Z
th
- Transient Thermal Impedance -
°C/W
Junction to ambient
10
Junction to case
1
0.1
0.1
1
10
100
1k
10 k
100 k
Cycles (50 Hz)
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