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AD5235BRUZ25

DUAL 25K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, ROHS COMPLIANT, MO-153AB, TSSOP-16

器件类别:模拟混合信号IC    转换器   

厂商名称:Rochester Electronics

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
TSSOP
包装说明
TSSOP,
针数
16
Reach Compliance Code
unknown
其他特性
LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY
标称带宽
0.125 kHz
控制接口
3-WIRE SERIAL
转换器类型
DIGITAL POTENTIOMETER
JESD-30 代码
R-PDSO-G16
JESD-609代码
e3
长度
5 mm
湿度敏感等级
3
功能数量
2
位置数
1024
端子数量
16
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
260
认证状态
COMMERCIAL
电阻定律
LOGARITHMIC
最大电阻容差
30%
最大电阻器端电压
5 V
最小电阻器端电压
座面最大高度
1.2 mm
标称供电电压
5 V
表面贴装
YES
标称温度系数
35 ppm/°C
温度等级
INDUSTRIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称总电阻
25000 Ω
宽度
4.4 mm
Base Number Matches
1
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Nonvolatile Memory, Dual
1024-Position Digital Potentiometer
AD5235
FEATURES
Dual-channel, 1024-position resolution
25 kΩ, 250 kΩ nominal resistance
Low temperature coefficient: 35 ppm/°C
Nonvolatile memory stores wiper settings
Permanent memory write protection
Wiper setting readback
Resistance tolerance stored in EEMEM
Predefined linear increment/decrement instructions
Predefined ±6 dB/step log taper increment/decrement
instructions
SPI-compatible serial interface
3 V to 5 V single supply or ±2.5 V dual supply
26 bytes extra nonvolatile memory for user-defined
information
100-year typical data retention, T
A
= 55°C
Power-on refreshed with EEMEM settings
CS
CLK
SDI
SDO
PR
WP
RDY
POWER-ON
RESET
EEMEM
CONTROL
EEMEM2
26 BYTES
USER EEMEM
RDAC2
SERIAL
INTERFACE
EEMEM1
FUNCTIONAL BLOCK DIAGRAM
ADDR
DECODE
AD5235
RDAC1
REGISTER
V
DD
A1
W1
RDAC1
B1
RDAC2
REGISTER
A2
W2
B2
V
SS
GND
02816-001
RTOL*
*RAB TOLERANCE
Figure 1.
APPLICATIONS
DWDM laser diode driver, optical supervisory systems
Mechanical potentiometer replacement
Instrumentation: gain, offset adjustment
Programmable voltage-to-current conversion
Programmable filters, delays, time constants
Programmable power supply
Low resolution DAC replacement
Sensor calibration
In the scratchpad programming mode, a specific setting can
be programmed directly to the RDAC
2
register, which sets the
resistance between Terminal W and Terminal A and Terminal W
and Terminal B. This setting can be stored into the EEMEM
and is restored automatically to the RDAC register during
system power-on.
The EEMEM content can be restored dynamically or through
external PR strobing, and a WP function protects EEMEM
contents. To simplify the programming, the independent or
simultaneous linear-step increment or decrement commands
can be used to move the RDAC wiper up or down, one step at a
time. For logarithmic ±6 dB changes in the wiper setting, the
left or right bit shift command can be used to double or halve the
RDAC wiper setting.
The AD5235 patterned resistance tolerance is stored in the
EEMEM. The actual end-to-end resistance can, therefore, be
known by the host processor in readback mode. The host can
execute the appropriate resistance step through a software
routine that simplifies open-loop applications as well as
precision calibration and tolerance matching applications.
The AD5235 is available in a thin, 16-lead TSSOP package. The
part is guaranteed to operate over the extended industrial
temperature range of −40°C to +85°C.
GENERAL DESCRIPTION
The AD5235 is a dual-channel, nonvolatile memory,
1
digitally
controlled potentiometer
2
with 1024-step resolution. The device
performs the same electronic adjustment function as a mechanical
potentiometer with enhanced resolution, solid state reliability,
and superior low temperature coefficient performance. The
versatile programming of the AD5235 via an SPI®-compatible
serial interface allows 16 modes of operation and adjustment
including scratchpad programming, memory storing and restoring,
increment/decrement, ±6 dB/step log taper adjustment, wiper
setting readback, and extra EEMEM
1
for user-defined information
such as memory data for other components, look-up table, or
system identification information.
1
2
The terms nonvolatile memory and EEMEM are used interchangeably.
The terms digital potentiometer and RDAC are used interchangeably.
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©2004–2009 Analog Devices, Inc. All rights reserved.
AD5235
TABLE OF CONTENTS
Features .............................................................................................. 1
 
Applications ....................................................................................... 1
 
General Description ......................................................................... 1
 
Functional Block Diagram .............................................................. 1
 
Revision History ............................................................................... 2
 
Specifications..................................................................................... 3
 
Electrical Characteristics—25 kΩ, 250 kΩ Versions ............... 3
 
Interface Timing and EEMEM Reliability
Characteristics—25 kΩ, 250 kΩ Versions ................................. 5
 
Absolute Maximum Ratings............................................................ 7
 
ESD Caution .................................................................................. 7
 
Pin Configuration and Function Descriptions ............................. 8
 
Typical Performance Characteristics ............................................. 9
 
Test Circuits ................................................................................. 12
 
Theory of Operation ...................................................................... 14
 
Scratchpad and EEMEM Programming .................................. 14
 
Basic Operation .......................................................................... 14
 
EEMEM Protection .................................................................... 15
 
Digital Input and Output Configuration................................. 15
 
Serial Data Interface ................................................................... 15
 
Daisy-Chain Operation ............................................................. 15
 
Terminal Voltage Operating Range.......................................... 16
 
Advanced Control Modes ......................................................... 18
 
RDAC Structure .......................................................................... 19
 
Programming the Variable Resistor ......................................... 20
 
Programming the Potentiometer Divider ............................... 20
 
Programming Examples ............................................................ 21
 
EVAL-AD5235EBZ Evaluation Kit .......................................... 21
 
Applications Information .............................................................. 22
 
Bipolar Operation from Dual Supplies.................................... 22
 
Gain Control Compensation .................................................... 22
 
High Voltage Operation ............................................................ 22
 
DAC.............................................................................................. 22
 
Bipolar Programmable Gain Amplifier ................................... 23
 
10-Bit Bipolar DAC .................................................................... 23
 
Programmable Voltage Source with Boosted Output ........... 23
 
Programmable Current Source ................................................ 24
 
Programmable Bidirectional Current Source ......................... 24
 
Programmable Low-Pass Filter ................................................ 24
 
Programmable Oscillator .......................................................... 25
 
Optical Transmitter Calibration with ADN2841 ................... 25
 
Resistance Scaling ...................................................................... 26
 
Resistance Tolerance, Drift, and Temperature Coefficient
Mismatch Considerations ......................................................... 26
 
RDAC Circuit Simulation Model ............................................. 27
 
Outline Dimensions ....................................................................... 28
 
Ordering Guide .......................................................................... 28
 
REVISION HISTORY
4/09—Rev.
B to Rev. C
Changes to Figure 1 .......................................................................... 1
Changes to Specifications ................................................................ 3
Changes to SDO, Description Column, Table 4 ........................... 8
Changes to Figure 18 ...................................................................... 11
Changes to Theory of Operation Section .................................... 14
Changes to Serial Data Interface Section .................................... 15
Changes to Linear Increment and Decrement Instructions
Section, Logarithmic Taper Mode Adjustment Section, and
Figure 42 .......................................................................................... 18
Changes to Rheostat Operations Section .................................... 20
Changes to Bipolar Programmable Gain Amplifier Section,
Figure 49, Table 21, and 10-Bit Bipolar DAC Section................ 23
Changes to Programmable Oscillator Section and Figure 56 ... 25
Changes to Ordering Guide .......................................................... 28
7/04—Rev. A to Rev. B
Updated Formatting ........................................................... Universal
Edits to Features, General Description, and Block Diagram .......1
Changes to Specifications .................................................................3
Replaced Timing Diagrams..............................................................6
Changes to Absolute Maximum Ratings ........................................7
Changes to Pin Function Descriptions ...........................................8
Changes to Typical Performance Characteristics..........................9
Additional Test Circuit (Figure 36) .................................................9
Edits to Theory of Operation ........................................................ 14
Edits to Applications ...................................................................... 23
Updated Outline Dimensions ....................................................... 27
8/02—Rev. 0 to Rev. A
Change to Features and General Description................................1
Change to Specifications ..................................................................2
Change to Calculating Actual End-to-End Terminal
Resistance Section .......................................................................... 14
Rev. C | Page 2 of 28
AD5235
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS
V
DD
= 3 V to 5.5 V, V
SS
= 0 V; V
DD
= 2.5 V, V
SS
= −2.5 V, V
A
= V
DD
, V
B
= V
SS
, −40°C < T
A
< +85°C, unless otherwise noted. The part can be
operated at 2.7 V single supply, except from 0°C to −40°C, where a minimum of 3 V is needed.
Table 1.
Parameter
DC CHARACTERISTICS—RHEOSTAT
MODE (All RDACs)
Resistor Differential Nonlinearity
2
Resistor Integral Nonlinearity
2
Nominal Resistor Tolerance
Resistance Temperature Coefficient
Wiper Resistance
Nominal Resistance Match
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE (All RDACs)
Resolution
Differential Nonlinearity
3
Integral Nonlinearity
3
Voltage Divider Temperature Coefficient
Full-Scale Error
Zero-Scale Error
RESISTOR TERMINALS
Terminal Voltage Range
4
Capacitance Ax, Bx
5
Capacitance Wx
5
Common-Mode Leakage Current
5, 6
DIGITAL INPUTS AND OUTPUTS
Input Logic High
Input Logic Low
Input Logic High
Input Logic Low
Input Logic High
Input Logic Low
Output Logic High (SDO, RDY)
Output Logic Low
Input Current
Input Capacitance
5
POWER SUPPLIES
Single-Supply Power Range
Dual-Supply Power Range
Positive Supply Current
Negative Supply Current
EEMEM Store Mode Current
Symbol
Conditions
Min
Typ
1
Max
Unit
R-DNL
R-INL
∆R
AB
/R
AB
(∆R
AB
/R
AB
)/∆T × 10
6
R
W
R
AB1
/R
AB2
R
WB
R
WB
Dx = 0x3FF
I
W
= 1 V/R
WB
, V
DD
= 5 V, code = 0x200
I
W
= 1 V/R
WB
, V
DD
= 3 V, code = 0x200
Code = 0x3FF, T
A
= 25°C
−2
−4
−30
35
50
200
±0.1
+2
+4
+30
100
LSB
LSB
%
ppm/°C
Ω
Ω
%
N
DNL
INL
(∆V
W
/V
W
)/∆T × 10
6
V
WFSE
V
WZSE
V
A
, V
B
, V
W
C
A
, C
B
C
W
I
CM
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
I
IL
C
IL
V
DD
V
DD
/V
SS
I
DD
I
DD
I
SS
I
DD
(store)
I
SS
(store)
−2
−4
Code = half scale
Code = full scale
Code = zero scale
15
−6
0
V
SS
f = 1 MHz, measured to GND,
code = half-scale
f = 1 MHz, measured to GND,
code = half-scale
V
W
= V
DD
/2
With respect to GND, V
DD
= 5 V
With respect to GND, V
DD
= 5 V
With respect to GND, V
DD
= 3 V
With respect to GND, V
DD
= 3 V
With respect to GND, V
DD
= +2.5 V,
V
SS
= −2.5 V
With respect to GND, V
DD
= +2.5 V,
V
SS
= −2.5 V
R
PULL-UP
= 2.2 kΩ to 5 V (see Figure 36)
I
OL
= 1.6 mA, V
LOGIC
= 5 V (see Figure 36)
V
IN
= 0 V or V
DD
2.4
11
80
0.01
10
+2
+4
0
4
V
DD
Bits
LSB
LSB
ppm/°C
LSB
LSB
V
pF
pF
±2
μA
V
V
V
V
V
V
V
V
μA
pF
V
V
μA
μA
μA
mA
mA
0.8
2.1
0.6
2.0
0.5
4.9
0.4
±2.25
5
V
SS
= 0 V
V
IH
= V
DD
or V
IL
= GND, T
A
= 25°C
V
IH
= V
DD
or V
IL
= GND
V
IH
= V
DD
or V
IL
= GND,
V
DD
= +2.5 V, V
SS
= −2.5 V
V
IH
= V
DD
or V
IL
= GND,
V
SS
= GND, I
SS
≈ 0
V
DD
= +2.5 V, V
SS
= −2.5 V
Rev. C | Page 3 of 28
3.0
±2.25
2
3.5
3.5
35
−35
5.5
±2.75
4.5
6.0
6.0
AD5235
Parameter
EEMEM Restore Mode Current
7
Symbol
I
DD
(restore)
I
SS
(restore)
P
DISS
P
SS
BW
THD
W
Conditions
V
IH
= V
DD
or V
IL
= GND,
V
SS
= GND, I
SS
≈ 0
V
DD
= +2.5 V, V
SS
= −2.5 V
V
IH
= V
DD
or V
IL
= GND
∆V
DD
= 5 V ± 10%
−3 dB, V
DD
/V
SS
= ±2.5 V,
R
AB
= 25 kΩ/250 kΩ
V
A
= 1 V rms, V
B
= 0 V, f = 1 kHz
V
A
= 1 V rms, V
B
= 0 V, f = 1 kHz,
R
AB
= 50 kΩ, 100 kΩ
V
A
= V
DD
, V
B
= 0 V,
V
W
= 0.50% error band,
Code 0x000 to Code 0x200,
R
AB
= 25 kΩ/250 kΩ
R
AB
= 25 kΩ/250 kΩ, T
A
= 25°C
V
A
= V
DD
, V
B
= 0 V, measured V
W1
with
V
W2
making full-scale change
V
DD
= V
A1
= +2.5 V, V
SS
= V
B1
= −2.5 V,
measured V
W1
with V
W2
= 5 V p-p @
f = 1 kHz, Code 1 = 0x200, Code 2 =
0x3FF, R
AB
= 25 kΩ/250 kΩ
Min
0.3
−0.3
Typ
1
3
−3
18
0.002
125/12
0.05
0.045
4/36
Max
9
−9
50
0.01
Unit
mA
mA
μW
%/%
kHz
%
%
μs
Power Dissipation
8
Power Supply Sensitivity
5
DYNAMIC CHARACTERISTICS
5, 9
Bandwidth
Total Harmonic Distortion
V
W
Settling Time
t
S
Resistor Noise Density
Crosstalk (C
W1
/C
W2
)
Analog Crosstalk
e
N_WB
C
T
C
TA
20/64
90/21
−81/−62
nV/√Hz
nV-s
dB
1
2
Typicals represent average readings at 25°C and V
DD
= 5 V.
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. I
W
~ 50 μA for V
DD
= 2.7 V and I
W
~ 400 μA for V
DD
= 5 V (see Figure 25).
3
INL and DNL are measured at V
W
with the RDAC configured as a potentiometer divider similar to a voltage output DAC. V
A
= V
DD
and V
B
= V
SS
. DNL specification limits of
±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 26).
4
Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground-
referenced bipolar signal adjustment.
5
Guaranteed by design and not subject to production test.
6
Common-mode leakage current is a measure of the dc leakage from any Terminal A, Terminal B, or Terminal W to a common-mode bias level of V
DD
/2.
7
EEMEM restore mode current is not continuous. Current is consumed while EEMEM locations are read and transferred to the RDAC register (see Figure 22). To
minimize power dissipation, a NOP, Instruction 0 (0x0) should be issued immediately after Instruction 1 (0x1).
8
P
DISS
is calculated from (I
DD
× V
DD
) + (I
SS
× V
SS
).
9
All dynamic characteristics use V
DD
= +2.5 V and V
SS
= −2.5 V.
Rev. C | Page 4 of 28
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参数对比
与AD5235BRUZ25相近的元器件有:AD5235BRU25、AD5235BRU250-RL7、AD5235BRU25-RL7、AD5235BRUZ250。描述及对比如下:
型号 AD5235BRUZ25 AD5235BRU25 AD5235BRU250-RL7 AD5235BRU25-RL7 AD5235BRUZ250
描述 DUAL 25K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, ROHS COMPLIANT, MO-153AB, TSSOP-16 DUAL 25K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, MO-153AB, TSSOP-16 DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, MO-153AB, TSSOP-16 DUAL 25K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, MO-153AB, TSSOP-16 DUAL 250K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, PDSO16, ROHS COMPLIANT, MO-153AB, TSSOP-16
是否无铅 不含铅 含铅 含铅 含铅 不含铅
是否Rohs认证 符合 不符合 不符合 不符合 符合
零件包装代码 TSSOP TSSOP TSSOP TSSOP TSSOP
包装说明 TSSOP, MO-153AB, TSSOP-16 TSSOP, TSSOP, TSSOP,
针数 16 16 16 16 16
Reach Compliance Code unknown unknown unknown unknown unknown
其他特性 LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY LINEAR OR LOG TAPER SETTINGS; NONVOLATILE MEMORY; CAN ALSO OPERATE FROM +/-2.25V TO +/-2.75V SUPPLY
标称带宽 0.125 kHz 0.125 kHz 0.125 kHz 0.125 kHz 0.125 kHz
控制接口 3-WIRE SERIAL 3-WIRE SERIAL 3-WIRE SERIAL 3-WIRE SERIAL 3-WIRE SERIAL
转换器类型 DIGITAL POTENTIOMETER DIGITAL POTENTIOMETER DIGITAL POTENTIOMETER DIGITAL POTENTIOMETER DIGITAL POTENTIOMETER
JESD-30 代码 R-PDSO-G16 R-PDSO-G16 R-PDSO-G16 R-PDSO-G16 R-PDSO-G16
JESD-609代码 e3 e0 e0 e0 e3
长度 5 mm 5 mm 5 mm 5 mm 5 mm
湿度敏感等级 3 1 NOT APPLICABLE NOT APPLICABLE 3
功能数量 2 2 2 2 2
位置数 1024 1024 1024 1024 1024
端子数量 16 16 16 16 16
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP TSSOP TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 240 220 220 260
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
电阻定律 LOGARITHMIC LOGARITHMIC LOGARITHMIC LOGARITHMIC LOGARITHMIC
最大电阻容差 30% 30% 30% 30% 30%
最大电阻器端电压 5 V 5 V 5 V 5 V 5 V
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
标称供电电压 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
标称温度系数 35 ppm/°C 35 ppm/°C 35 ppm/°C 35 ppm/°C 35 ppm/°C
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 MATTE TIN TIN LEAD TIN LEAD TIN LEAD MATTE TIN
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 30 30 30 40
标称总电阻 25000 Ω 25000 Ω 250000 Ω 25000 Ω 250000 Ω
宽度 4.4 mm 4.4 mm 4.4 mm 4.4 mm 4.4 mm
Base Number Matches 1 1 1 1 -
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