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AD800-8-S1

Photodiodes High Speed Si APD 800um Active Area

器件类别:光电子/LED   

厂商名称:First Sensor

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
First Sensor
产品种类
Product Category
Photodiodes
RoHS
Details
产品
Product
Avalanche Photodiodes
封装 / 箱体
Package / Case
TO-52-S1
安装风格
Mounting Style
Through Hole
Peak Wavelength
410 nm
Dark Current
1 nA
Vr - Reverse Voltage
100 V
Rise Time
0.28 ns
Half Intensity Angle Degrees
64 deg
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
高度
Height
5.2 mm
长度
Length
5.4 mm
系列
Packaging
Bulk
类型
Type
Silicon Avalanche Photodiode
宽度
Width
5.4 mm
Noise Equivalent Power - NEP
1E-14 W/sqrt Hz
NumOfPackaging
1
Pd-功率耗散
Pd - Power Dissipation
100 mW
Photocurrent
2 uA
Responsivity
25 A/W
工厂包装数量
Factory Pack Quantity
10
文档预览
First Sensor APD Data Sheet
Part Description AD800-8 TO
Order # 500947
Version 20-06-11
Features
• APD with 0.5 mm² active area
• 800 µm diameter active area
• High gain at low bias voltage
• Fast rise time, low capacitance
• Optimum gain: 50-60
Description
Circular active area APD chip with
800 µm diameter. Metal can type
hermetic TO52 package with clear
glass window.
Application
• Laser range finder
• High speed photometry
• High speed optical
communications
• Medical equipment
RoHS
2002/95/EC
Absolute maximum ratings
Symbol
T
STG
T
OP
M
max
I
PEAK
Parameter
Storage temp
Operating temp
Gain (I
P0
= 1 nA)
Peak DC current
Min
-55
-40
200
Max
125
100
0.25
Unit
°C
°C
mA
Spectral response (M = 100)
60
50
Responsivity (A/W)
40
30
Schematic
PIN 1
PIN 4
PIN 3
20
10
0
400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100
Wavelength (nm)
Electro-optical characteristics @ 23 °C
Symbol
Characteristic
Active area
Active area
Dark current
Capacitance
Responsivity
Rise time
Cut-off frequency
Breakdown voltage
Temperature coefficiant
Excess noise factor
Excess noise index
Test Condition
Min
Typ
diameter 800
0.5
2.0
5.0
50
0.7
0.5
150
0.45
2.2
0.2
Max
Unit
µm
mm²
nA
pF
A/W
ns
GHz
V
V/K
I
D
C
t
R
V
BR
M = 100
M = 100
M = 100; λ = 800 nm
M = 100; λ = 905 nm; R
L
= 50 Ω
-3dB
I
R
= 2 µA, V
BR
- binning available
Change of V
BR
with temperature
M = 100
M = 100
6.0
45
80
240
European, International Sales:
First Sensor AG
Peter-Behrens-Strasse 15
12459 Berlin
Germany
T +49 30 6399 2399
F +49 30 639923-752
sales.opto@first-sensor.com
USA:
First Sensor Inc.
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
T +1 818 706 3400
F +1 818 889 7053
sales.us@first-sensor.com
ta Sheet
First Sensor APD Data Sheet
Part Description AD800-8 TO
Order # 500947
Version 20-06-11
800-8 TO
# 500947
sion 20-06-11
Quantum efficiency (23 °C)
100,0
Capacitance as fct of reverse bias (23 °C)
100
90
Quantum efficiency (%)
80,0
80
60,0
Capacitance (pF)
400 450 500 550 600 650 700 750 800 850 900 950 100010501100
70
60
50
40
30
20
10
40,0
20,0
0,0
0
0
10
20
30
40
50
60
Wavelength (nm)
Reverse bias (V)
Multiplication as fct of bias (23 °C)
1.000
Dark current as fct of bias (23 °C)
1,0E-08
100
Multiplication
10
1
20
30
40
50
60
70
80
90
100 110 120 130 140 150
Dark current (A)
1,0E-09
1,0E-10
1,0E-11
20
30
40
50
60
70
80
90
100 110 120 130 140 150
Reverse bias (V)
Reverse bias (V)
Application hints:
Bias supply voltage
Current limiting resistor
APD
min. 0,1 µF,
closest to APD
• Current should be limited by a protecting resistor or current limiting - IC
inside the power supply
• For low light level applications blocking of ambient light should be used
• For high gain applications bias voltage should be temperature compensated
• Please consider basic ESD protection while handling
• Use low noise read-out - IC
• For further questions please refer to document "Instructions for handling and processing"
• Optimum gain: 50-60
Diode, protective circuit
Read-out circuit or
f.e. 50 Load resistance
Package dimension:
Small quantities: Foam pad, boxed (12 cm x 16.5 cm)
Disclaimer:
Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.
First Sensor AG
Peter-Behrens-Strasse 15
12459 Berlin
Germany
T +49 30 6399 2399
F +49 30 639923-752
sales.opto@first-sensor.com
European, International Sales:
USA:
First Sensor Inc.
5700 Corsa Avenue #105
Westlake Village
CA 91362 USA
T +1 818 706 3400
F +1 818 889 7053
sales.us@first-sensor.com
查看更多>
参数对比
与AD800-8-S1相近的元器件有:AD2500-8-TO5I。描述及对比如下:
型号 AD800-8-S1 AD2500-8-TO5I
描述 Photodiodes High Speed Si APD 800um Active Area Photodiodes High Speed Si APD 2520um Active Area
Product Attribute Attribute Value Attribute Value
制造商
Manufacturer
First Sensor First Sensor
产品种类
Product Category
Photodiodes Photodiodes
RoHS Details Details
产品
Product
Avalanche Photodiodes Avalanche Photodiodes
封装 / 箱体
Package / Case
TO-52-S1 TO-5i
安装风格
Mounting Style
Through Hole Through Hole
Peak Wavelength 410 nm 800 nm
Dark Current 1 nA 20 nA
Vr - Reverse Voltage 100 V 120 V
Rise Time 0.28 ns 1.5 ns
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C + 100 C
高度
Height
5.2 mm 4.2 mm
长度
Length
5.4 mm 9.2 mm
系列
Packaging
Bulk Bulk
类型
Type
Silicon Avalanche Photodiode NIR Enhanced Response Avalanche Photodiode
宽度
Width
5.4 mm 9.2 mm
Noise Equivalent Power - NEP 1E-14 W/sqrt Hz 30E-14 W/sqrt Hz
NumOfPackaging 1 1
Pd-功率耗散
Pd - Power Dissipation
100 mW 100 mW
Photocurrent 2 uA 1 uA
Responsivity 25 A/W 50 A/W
工厂包装数量
Factory Pack Quantity
10 10
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