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Charge Pump Regulator
for Color TFT Panels
ADM8839
FEATURES
3 voltages (+5 V, +15 V, −15 V) from a single 3 V supply
Power efficiency optimized for use with TFT in mobile
phones
Low quiescent current
Low shutdown current (<5 μA)
Shutdown function
Option to use external LDO
FUNCTIONAL BLOCK DIAGRAM
C5, 2.2µF
V
CC
ADM8839
C1+
VOLTAGE
DOUBLER
C1–
C1, 2.2µF
OSCILLATOR
LDO
VOLTAGE
REGULATOR
VOUT
LDO_IN
C6, 2.2µF
+5VOUT
+5VIN
C2+
C2–
C3+
C3–
C3, 0.22µF
+15V
C8, 0.22µF
C4, 0.22µF
APPLICATIONS
Hand-held instruments
TFT LCD panels
Cellular phones
LDO_ON/OFF
CONTROL
LOGIC
+5V
C7, 2.2µF
DOUBLE
VOLTAGE
TRIPLER
TRIPLE
TIMING
GENERATOR
C2, 0.22µF
+15VOUT
C4+
SHDN
SHUTDOWN
CONTROL
DISCHARGE
VOLTAGE
INVERTER
C4–
–15VOUT
GND
–15V
C9, 0.22µF
03075-001
Figure 1.
GENERAL DESCRIPTION
The ADM8839 is a charge pump regulator used for color thin
film transistor (TFT) liquid crystal displays (LCDs). Using
charge pump technology, the device can be used to generate
three voltages (+5 V ± 2%, +15 V, −15 V) from a single 3 V
supply. These voltages are then used to provide supplies for the
LCD controller (5 V) and the gate drives for the transistors in
the panel (+15 V and −15 V). Only a few external capacitors are
needed for the charge pumps. An efficient low dropout (LDO)
voltage regulator ensures that the power efficiency is high, and
provides a low ripple 5 V output. This LDO can be shut down
and an external LDO can be used to regulate the 5 V doubler
output and drive the input to the charge pump section that
generates the +15 V and −15 V outputs, if required by the user.
The ADM8839 has a power save shutdown feature. The 5 V
output consumes the most power, so power efficiency is also
maximized on this output with an oscillator-enabling scheme
(Green Idle™). This effectively senses the load current that is
flowing and turns on the charge pump only when charge needs
to be delivered to the 5 V pump doubler output.
The ADM8839 is fabricated using CMOS technology for
minimal power consumption. The part is packaged in a 20-lead
LFCSP (lead frame chip scale package).
Rev. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.
ADM8839
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Timing Specifications .................................................................. 3
Absolute Maximum Ratings............................................................ 4
Thermal Characteristics .............................................................. 4
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions..............................5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................8
Power Sequencing .........................................................................8
Transient Response .......................................................................8
Boosting the Current Drive of the ±15 V Supply .....................8
Outline Dimensions ....................................................................... 10
Ordering Guide .......................................................................... 10
REVISION HISTORY
7/06—Rev.
B to Rev. C
Updated Format..................................................................Universal
Changes to Table 1............................................................................ 3
Changes to Table 5............................................................................ 5
Changes to Ordering Guide .......................................................... 10
Updated Outline Dimension......................................................... 10
7/05—Rev. A to Rev. B
Updated Ordering Guide .................................................................3
2/03—Rev. 0 to Rev. A
Changed Specifications.....................................................................2
Updated Outline Dimensions..........................................................8
Rev. C | Page 2 of 12
ADM8839
SPECIFICATIONS
V
CC
= 3 V (+40%/−10%); T
A
= −40°C to +85°C; C1, C5, C6, C7 = 2.2 μF; C2, C3, C4, C8, C9 = 0.22 μF; unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE, V
CC
SUPPLY CURRENT, I
CC
+5 V OUTPUT
Output Voltage
Output Current
Output Ripple
Transient Response
+15 V OUTPUT
Output Voltage
Output Current
Output Ripple
−15 V OUTPUT
Output Voltage
Output Current
Output Ripple
POWER EFFICIENCY
CHARGE PUMP FREQUENCY
CONTROL PINS, SHDN
Input Voltage, V
SHDN
Digital Input Current
Digital Input Capacitance
1
LDO_ON/OFF
Input Voltage
Digital Input Current
Digital Input Capacitance
1
1
Test Conditions
Unloaded
Shutdown mode, T
A
= 25°C
I
L
= 10 μA to 20 mA
8 mA load
I
L
stepped from 10 μA to 8 mA
I
L
= 1 μA to 150 μA
I
L
= 100 μA
I
L
= −1 μA to −150 μA
I
L
= −100 μA
R5 V
OUT
load = 5 mA, ±15 V load = ±150 μA, V
CC
= 3.0 V
Min
2.7
Typ
250
Max
4.2
500
5
5.1
20
Unit
V
μA
μA
V
mA
mV p-p
μs
V
μA
mV p-p
V
μA
mV p-p
%
kHz
V
V
μA
pF
V
V
μA
pF
4.9
5.0
5
10
5
15.0
1
50
−15.0
−1
50
82
100
14.0
16.0
150
−16.0
−150
−14.0
60
SHDN low = shutdown mode
SHDN high = normal mode
0.7 × V
CC
140
0.3 × V
CC
±1
10
Low = External LDO
High = Internal LDO
0.3 × V
CC
0.7 × V
CC
±1
10
Guaranteed by design. Not 100% production tested.
TIMING SPECIFICATIONS
V
CC
= 3 V, T
A
= 25°C; C1, C5, C6, C7 = 2.2 μF; C2, C3, C4, C8, C9 = 0.22 μF.
Table 2.
Parameter
POWER-UP SEQUENCE
+5 V Rise Time, t
R5V
+15 V Rise Time, t
R15V
−15 V Fall Time, t
FM15V
Delay Between −15 V Fall and +15 V, t
DELAY
POWER-DOWN SEQUENCE
+5 V Fall Time, t
F5V
+15 V Fall Time, t
F15V
−15 V Rise Time, t
RM15V
Test Conditions/Comments
10% to 90%, see Figure 14
10% to 90%, see Figure 14
90% to 10%, see Figure 14
See Figure 14
90% to 10%, see Figure 14
90% to 10%, see Figure 14
10% to 90%, see Figure 14
Min
Typ
250
3
3
600
35
10
20
Max
Unit
μs
ms
ms
μs
ms
ms
ms
Rev. C | Page 3 of 12
ADM8839
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
Supply Voltage
Input Voltage on Digital Inputs
Output Short-Circuit Duration to GND
Output Voltage
+5 V Output
–15 V Output
+15 V Output
Operating Temperature Range
Power Dissipation
Storage Temperature Range
ESD
Rating
−0.3 V to +6.0 V
−0.3 V to +6.0 V
10 sec
0 V to 7.0 V
−17 V to +0.3 V
−0.3 V to +17 V
−40°C to +85°C
50 mW
−65°C to +150°C
Class I
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
θ
JA
is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type
20-Lead LFCSP_VQ
θ
JA
31°C
Unit
°C/W
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. C | Page 4 of 12
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