AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
•
400 – 2300 MHz
•
+31.5 dBm P1dB
•
+46 dBm Output IP3
•
18 dB Gain @ 900 MHz
•
Single Positive Supply (+5 V)
•
Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Product Description
The AH215 / ECP100 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB
power. The part is housed in a lead-free/green/RoHS-
compliant SOIC-8 package. All devices are 100% RF and
DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 / ECP100 to maintain
high linearity over temperature and operate directly off a
+5 V supply.
Functional Diagram
1
8
7
6
5
2
3
4
Applications
•
Final stage amplifiers for Repeaters
•
Mobile Infrastructure
•
Defense / Homeland Security
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications
(1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
Typical Performance
(4)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dBm
dBm
mA
V
400
400
10
2140
11
18
8
+31.5
+45
6.3
+25.5
+23
450
5
500
Typ
Max
2300
Parameters
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
7.0
900
18
-13
-7
+31
+46
+25.5
Typical
1960
12
-11
-10
+32
+46
+25.5
+23
5.5
6.2
+5 V @ 450 mA
2140
11
-18
-8
+31.5
+45
+29
+43.8
W-CDMA Channel Power
Noise Figure
Supply Bias
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc
(3)
Device Voltage, Vcc
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51
Ω.
(ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Ordering Information
Part No.
AH215-S8*
ECP100G*
AH215-S8G
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
Rating
-40 to +85
°C
-65 to +150
°C
+26 dBm
+8 V
900 mA
5W
+250
°C
Description
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Typical Device Data
S-Parameters (V
cc
= +5 V, I
cc
= 450 mA, T = 25°C, calibrated to device leads)
1.0
0.8
0.8
40
35
30
25
Gain (dB)
20
15
6
0.
6
0.
Swp Max
5.05GHz
2.
0
1.0
Gain and Maximum Stable Gain
DB(|S[2,1]|)
DB(GMax)
0.
4
S11
S22
Swp Max
5.05GHz
2.
0
0
3.
0
4.
0.2
0
5.
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10
5
0
-5
-10
0
0.5
1
1.5
Frequency (GHz)
2
2.5
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0
.4
.
-0
4
.0
-2
-0
.6
-0
.6
-0.8
-2
.0
-0.8
Swp Min
0.05GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance loss plots are shown from 0.05 – 5.05 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 450 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
-1.23
-1.01
-1.01
-1.03
-1.21
-1.34
-1.52
-2.00
-2.65
-3.86
-6.72
-14.09
-9.98
-4.27
-2.13
-1.24
-0.82
-177.95
178.17
172.63
163.72
155.20
146.17
136.69
126.65
115.04
97.52
86.05
94.99
166.89
157.68
142.95
130.88
120.68
24.07
19.55
15.55
12.03
9.86
8.11
6.92
6.13
5.80
6.01
6.17
6.15
4.98
2.52
-0.42
-3.40
-6.09
122.55
116.55
112.97
98.68
85.80
73.18
61.43
49.60
37.55
21.48
1.700
-23.83
-52.92
-80.08
-100.8
-116.44
-128.99
-1.0
-40.25
-39.49
-40.13
-38.83
-39.30
-37.70
-37.73
-37.14
-36.23
-36.45
-34.63
-35.91
-36.75
-39.10
-37.80
-38.58
-39.37
17.32
10.63
15.98
10.31
-4.249
-2.398
-16.27
-14.34
-28.50
-46.08
-68.99
-100.68
-147.66
171.86
123.26
89.55
67.22
-1.26
-1.33
-1.17
-0.93
-0.66
-0.83
-0.95
-1.05
-1.04
-1.11
-1.10
-1.00
-0.77
-0.79
-0.81
-0.84
-0.92
-1.0
-130.4
-155.43
-169.92
179.61
173.43
168.67
166.34
165.13
164.55
166.24
164.44
162.35
158.42
154.12
149.03
144.09
138.4
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 9 June 2005
-4
.0
-5.
0
-3
.0
-4
.0
-5.
0
2
-0.
2
-0.
Swp Min
0.05GHz
-10.
0
0.
4
3.
0
0
4.
5.0
-10.
0
-3
.0
0.
2
10.0
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
900 MHz Application Circuit (AH215-S8PCB900)
Typical RF Performance at 25°C
°
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
900 MHz
18 dB
-13 dB
-7.0 dB
+31 dBm
+46 dBm
+25.5 dBm
7.0 dB
+5 V
450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
(1)
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency (MHz)
20
18
S21 (dB)
S11 (dB)
S11 vs. Frequency
0
-4
-8
-12
-16
-20
840
+25°C
+85°C
-40°C
860
880
900
920
940
S22 (dB)
S22 vs. Frequency
0
-4
-8
-12
-16
-20
840
+25°C
+85°C
-40°C
860
880
900
920
940
16
14
12
10
8
840
860
+25°C
+85°C
-40°C
880
900
920
940
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10
9
NF (dB)
P1 dB vs. Frequency
34
32
P1 dB (dBm)
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz
-40
-45
-50
-55
-60
-65
+25°C
+85°C
-40°C
8
7
6
5
840
+25°C
+85°C
-40°C
860
880
900
920
940
30
28
26
24
840
+25°C
+85°C
-40°C
860
Frequency (MHz)
880
900
Frequency (MHz)
920
940
-70
19
20
21 22
23 24 25
Output Channel Power (dBm)
26
27
OIP3 vs. Output Power
freq. = 900, 901 MHz, +25°C
OIP3 vs. Temperature
50
47
OIP3 (dBm)
OIP3 (dBm)
OIP3 vs. Frequency
50
47
44
41
38
35
840
+25°C, +15 dBm / tone
50
47
OIP3 (dBm)
freq. = 900, 901 MHz, +15 dBm
44
41
38
35
10
13
16
19
Output Power (dBm)
22
25
44
41
38
35
-40
-15
10
35
Temperature (°C )
60
85
860
880
900
Frequency (MHz)
920
940
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
1960 MHz Application Circuit (AH215-S8PCB1960)
Typical RF Performance at 25°C
°
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+17 dBm / tone, 1 MHz spacing)
1960 MHz
12 dB
-11 dB
-10 dB
+32 dBm
+46 dBm
+25.5 dBm
5.5 dB
+5 V
450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
(1)
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
18
16
S21 (dB)
S11 (dB)
S11 vs. Frequency
0
-5
-10
-15
-20
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
S22 (dB)
S22 vs. Frequency
0
-5
-10
-15
-20
-25
1930
+25 °C
+85 °C
-40°C
1940
1950
1960
1970
1980
1990
14
12
10
8
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
-25
1930
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
8
7
NF (dB)
P1 dB vs. Frequency
35
33
P1 dB (dBm)
ACPR (dBc)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz
6
5
4
3
2
1
0
1930
1940
+25°C
+85°C
-40°C
1950
1960
1970
1980
1990
31
29
27
25
1930
+25°C
+85°C
-40°C
1940
1950
1960
1970
1980
1990
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
+25°C
+85°C
-40°C
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Frequency
+25°C, 15 dBm / tone
15 16 17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
OIP3 vs. Temperature
freq. = 1960, 1961 MHz, +15 dBm
OIP3 vs. Output Power
freq. = 1960, 1961 MHz, +25°C
55
50
OIP3 (dBm)
55
51
47
43
39
OIP3 (dBm)
50
46
42
38
34
30
-40
-15
10
35
Temperature ( °C)
60
85
10
12
14
16
18
Output Power (dBm)
20
22
OIP3 (dBm)
45
40
35
1930
1940
1950
1960
1970
1980
1990
35
Frequency (MHz)
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 9 June 2005
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
2140 MHz Application Circuit (AH215-S8PCB2140)
Typical RF Performance at 25°C
°
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+15 dBm / tone, 1 MHz spacing)
2140 MHz
11 dB
-18 dB
-8.0 dB
+31.5 dBm
+45 dBm
+23 dBm
6.2 dB
+5 V
450 mA
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
(1)
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15
12
S21 (dB)
S11 (dB)
S11 vs. Frequency
-10
-14
-18
-22
-26
-30
2110
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
-20
2110
S22 (dB)
S22 vs. Frequency
0
-5
-10
+25°C
-15
+85°C
-40°C
2120
2130
2140
2150
2160
2170
9
6
3
0
2110
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
9
8
7
6
5
4
3
2
1
0
2110
34
32
P1 dB (dBm)
P1 dB vs. Frequency
-40
-45
ACPR (dBc)
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz
NF (dB)
30
28
26
24
2110
+25°C
+85°C
-40°C
-50
-55
-60
+25°C
+85°C
-40°C
+25°C
+85°C
-40°C
2120
2130
2140
2150
2160
2170
2120
2130
2140
2150
2160
2170
-65
19
20
21
22
23
Output Channel Power (dBm)
24
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Temperature
50
47
OIP3 (dBm)
OIP3 (dBm)
OIP3 vs. Frequency
+25°C, +15 dBm / tone
freq. = 2140, 2141 MHz, +15 dBm / tone
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
50
47
44
41
38
35
2110
OIP3 (dBm)
50
47
44
41
38
35
2120
2130 2140 2150
Frequency (MHz)
2160
2170
10
12
14
16
18
Output Power (dBm)
20
22
44
41
38
35
-40
-15
10
35
Temperature (°C )
60
85
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 5 of 9 June 2005
