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ALD2301BSAL

IC COMP VOLT CMOS OD DUAL 8SOIC

器件类别:半导体    模拟混合信号IC   

厂商名称:Advanced_Linear_Devices_Inc.

器件标准:

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器件参数
参数名称
属性值
类型
通用
元件数
2
输出类型
CMOS,NMOS,开路漏极,TTL
电压 - 电源,单/双(±)
3 V ~ 10 V,±1.5 V ~ 5 V
电压 - 输入失调(最大值)
5mV @ 5V
电流 - 输入偏置(最大值)
200pA @ 5V
电流 - 输出(典型值)
60mA
电流 - 静态(最大值)
180µA
工作温度
0°C ~ 70°C
封装/外壳
8-SOIC(0.154",3.90mm 宽)
安装类型
表面贴装
供应商器件封装
8-SOIC
文档预览
A
DVANCED
L
INEAR
D
EVICES,
I
NC.
ALD2301A/ALD2301B
ALD2301C/ALD2301
DUAL PRECISION CMOS VOLTAGE COMPARATOR WITH OPEN DRAIN DRIVER
GENERAL DESCRIPTION
The ALD2301A/ALD2301B/ALD2301C/ALD2301 is a monolithic high
performance dual voltage comparator built with advanced silicon gate
CMOS technology. It features very high typical input impedance of
10
12
Ω;
low input bias current of 10pA; fast response time of 300ns;
very low power dissipation of 55µA per comparator; and single (+5V)
or dual (±5V) power supply operation.
The input voltage range includes ground, making this comparator
ideal for low level signal detection with high source impedance. The
outputs are open-drain configuration, allowing maximum application
flexibility, such as wired-OR connection. The outputs can be con-
nected to a higher external voltage than V
+
.
The ALD2301A/ALD2301B/ALD2301C/ALD2301 is ideal for a great
variety of voltage comparator applications, especially low level signal
detection circuits requiring low standby power, yet retaining high
output current capability as needed.
APPLICATIONS
High source impedance voltage comparison circuits
Dual limit window comparator
Power supply voltage monitor
Photo-detector sensor circuit
Relay or LED driver
Oscillators
Battery operated instruments
Remote signal detection
FEATURES
• Fanout of 30LS TTL loads
• Low supply current of 110µA typical
• Functional equivalent to LM193 industry
standard comparators
• Extremely low input bias currents
-- typically 10pA
• Virtually eliminates source impedance
effects
• Low operating supply voltage of 3V to 10V
• Single (+5V) and dual supply (±5V) operation
• High speed for both large signal and low
level signals -- 300ns typical for TTL inputs
• CMOS, NMOS and TTL compatible
• Wired-OR open drain outputs
• High output sinking current -- typically 60mA
• Low supply current spikes
PIN CONFIGURATION
OUT
1
-IN
1
+IN
1
GND
1
2
3
4
SAL, PAL, DA PACKAGES
8
7
6
5
V
+
OUT
2
-IN
2
+IN
2
BENEFITS
• Low power and high precision combination
• Built-in high input impedance buffer
• Built-in output driver with up to 60mA sink current
ORDERING INFORMATION
(“L” suffix for lead free version)
0°C to +70°C
Operating Temperature Range *
0°C to +70°C
-55°C to +125°C
8-Pin
Plastic Dip
Package
8-Pin
CERDIP
Package
BLOCK DIAGRAM
(8) V
+
INVERTING INPUT
-IN
1
(2)
NONINVERTING INPUT
+IN
1
(3)
V
+
(1) OUT
1
8-Pin
Small Outline
Package (SOIC)
ALD2301ASAL
ALD2301BSAL
ALD2301CSAL
ALD2301SAL
ALD2301APAL
ALD2301BPAL
ALD2301CPAL
ALD2301PAL
ALD2301ADA
ALD2301BDA
ALD2301CDA
ALD2301DA
INVERTING INPUT
-IN
2
(6)
NONINVERTING INPUT
+IN
2
(5)
(4) GND
(7) OUT
2
* Contact factory for leaded (non-RoHS) or high temperature versions.
©2018 Advanced Linear Devices, Inc., Vers. 2.1
www.aldinc.com
1 of 7
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
+
Differential input voltage range
Power dissipation
Operating temperature range SAL, PAL packages
DA package
Storage temperature range
Lead temperature, 10 seconds
10.6V
-0.3V to V
+
+0.3V
600 mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
T
A
= 25
°
C V
+
= +5V unless otherwise specified
Parameter
Supply
Voltage
Supply
Current
Voltage Gain
Input Offset
Voltage
Input Offset
Current
1
Input Bias
Current
1
Common
Mode Input
Voltage
2
Range
Symbol Min
V
S
V+
IS
±1.5
3
110
2301A
Typ
Max
±5
10
180
Min
±1.5
3
110
2301B
Typ
Max
±5
10
180
Min
±1.5
3
110
2301C
Typ Max
±5
10
180
Min
±1.5
3
110
2301
Typ
Max
±5
10
180
Unit
V
V
µA
Test
Conditions
Dual Supply
Single Supply
R
LOAD
=
A
VD
V
OS
50
150
2
2.5
10
200
50
150
5
5.8
10
200
50
150
20
20
10
400
50
150
10
11
10
200
V/mV R
LOAD
15KΩ
mV
mV
pA
R
LOAD
1.5KΩ
0°C
T
A
+70°C
I
OS
I
B
10
200
10
200
10
400
10
200
pA
V
ICR
-0.3
V
+
-1.5
-0.3
V
+
-1.5
-0.3
V
+
-1.5
-0.3
V
+
-1.5
V
Low Level
V
OL
Output Voltage
0.15
0.4
0.15
0.4
0.15
0.4
0.15
0.4
V
I
SINK
= 12mA
V
INPUT
= 1V
Differential
Low Level
Output
Current
High Level
Leakage
Current
Response
2
Time
I
OL
24
60
24
60
24
60
24
60
mA
V
OL
= 1.0 V
I
OH
.01
20
.01
20
.01
20
.01
20
nA
V
OH
= 5.0 V
t
RP
650
650
650
650
ns
R
L
= 5.1KΩ
C
L
= 15pF
100mV Input
Step/5mV
Overdrive
R
L
= 5.1KΩ
C
L
=15pF
TTL - Level
Input Step
300
300
300
300
ns
Notes :
1
2
Consists of junction leakage currents.
Sample tested parameters.
ALD2301A/ALD2301B/
ALD2301C/ALD2301
Advanced Linear Devices
2 of 7
TYPICAL PERFORMANCE CHARACTERISTICS
SATURATION VOL
TAGE
vs.TEMPERATURE
1.4
TRANSFER FUNCTION
+6.0
SATURATION VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0
-55
-25
0
25
50
75
100
125
OUTPUT VOLTAGE (V)
1.2
V
S
=
±
2.5V
I
SINK
= 50mA
TA = 25°C
VS =
±6V
RL = 5.1K
0.0
-6.0
-2.5
0.0
DIFFERENTIAL INPUT VOLTAGE (mV)
+2.5
TEM PERATURE (°C)
COMMON - MODE VOLTAGE LIMITS (V)
COMMON - MODE VOLTAGE REFERRED
TO SUPPL VOLTAGE
Y
INPUT
VOLTAGE (mV)
0.5
V+
-0.5
-1.0
V
S
=
±
2.5V
RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVES
0
100
V
IN
V+
T
A
= 25°C
V
S
=
±2.5V
5.1K
+
-
V-
V
OUT
0.5
V-
-0.5
-55
-25
0
25
50
75
100
OUTPUT
VOLTAGE (V)
+2.5
0V
0.0
-2.5
0.0
50mV
20mV
0.2
0.4
0.6
5mV
10mV
2mV
0.8
1.0
1.2
1.4
125
TEMPERATURE (°C)
TIM E (µs)
SATURATION VOL
TAGE vs.
SINK CURRENT
1.5
RESPONSE TIME FOR VARIOUS
INPUT OVERDRIVES
INPUT
VOLTAGE (mV)
T
A
= 25°C
V
S
=
±2.5V
5.1K
OUTPUT SATURATION
VOLTAGE (V)
V
S
=
±2.5V
1.2
0.9
125°C
0.6
0.3
0.0
0
15
30
45
60
OUTPUT SINK CURRENT (mA)
75
85°C
25°C
-25°C
-55°C
100
0
V
IN
V+
+2.5
0.0
-2.5
0.0
+
-
V-
V
OUT
0V
2mV
5mV
10mV
20mV
50mV
OUTPUT
VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TIME (
µ
S
)
ALD2301A/ALD2301B/
ALD2301C/ALD2301
Advanced Linear Devices
3 of 7
TYPICAL PERFORMANCE CHARACTERISTICS (cont'd)
TOTAL SUPPLY CURRENT vs.
TOTAL SUPPLY VOLTAGE
V+
200
SUPPLY CURRENT vs. TEMPERATURE
SUPPLY CURRENT (
µA)
SUPPLY CURRENT (µA)
160
140
120
100
80
2.0
-
+
T
A
= 25°C
R
L
=
180
160
140
120
100
80
60
V
S
=
±2.5V
No Load
All comparators
4.0
6.0
8.0
10.0
12.0
-55
-25
0
25
50
75
100
125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
INPUT OFFSET VOLTAGE vs.
TEMPERATURE
3.0
OFFSET VOLTAGE (mV)
2.8
2.6
2.4
2.2
2.0
1.8
-55
-25
0
25
50
75
100
125
TEMPERATURE (°C)
V
CM
= 0V
V
S
=
±
2.5V
TYPICAL APPLICATIONS
DUAL LIMIT WINDOW COMPARATOR
V+
1/2 ALD2301
V
REF(HIGH)
V+
DUAL LIMIT PHOTO-DETECTOR
MONITOR
V
External
VOLTAGE COMPARATOR WITH
COMPLEMENTARY OUTPUTS
+
-
R
LOAD
V+
BUZZER
1/2 ALD2301
+
LED
Q
1/2 ALD2301
-
V
REF
V
LIMIT2
+
V
OUT
-
V
IN
LIGHT
V
LIMIT 1
V
IN
V
REF(LOW)
+
-
1/2 ALD2301
+
+
-
Q
1/2 ALD2301
PHOTO-
DETECTOR
-
1/2 ALD2301
MINIMUM R
LOAD
= 1.5KΩ
OUTPUT HIGH FOR V
IN
< V
REF(HIGH)
AND V
IN
> V
REF(LOW)
LED turns on as photo-detector voltage reaches
VLIMIT1. Both LED and horn turns on as
photo-detector voltage reaches VLIMIT2.
VEXTERNAL = +12V V+ = +5V.
ALD2301A/ALD2301B/
ALD2301C/ALD2301
Advanced Linear Devices
4 of 7
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Dim
A
Millimeters
Min
1.35
0.10
0.35
0.18
4.69
3.50
Max
1.75
0.25
0.45
0.25
5.00
4.05
1.27 BSC
5.70
0.60
0.25
6.30
0.937
0.50
Min
0.053
0.004
0.014
0.007
0.185
0.140
Inches
Max
0.069
0.010
0.018
0.010
0.196
0.160
S (45°)
A
1
b
C
D-8
D
E
e
H
0.050 BSC
0.224
0.024
0.010
0.248
0.037
0.020
A
e
b
A
1
L
ø
S
S (45°)
H
C
L
ø
ALD2301A/ALD2301B/
ALD2301C/ALD2301
Advanced Linear Devices
5 of 7
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参数对比
与ALD2301BSAL相近的元器件有:ALD2301BPAL、ALD2301SAIL、ALD2301SAL、ALD2301APAL、ALD2301PAL、ALD2301CSAL、ALD2301CPAL、ALD2301ASAL。描述及对比如下:
型号 ALD2301BSAL ALD2301BPAL ALD2301SAIL ALD2301SAL ALD2301APAL ALD2301PAL ALD2301CSAL ALD2301CPAL ALD2301ASAL
描述 IC COMP VOLT CMOS OD DUAL 8SOIC IC COMP VOLT CMOS OD DUAL 8DIP IC COMP VOLT CMOS OD DUAL 8SOIC IC COMP VOLT CMOS OD DUAL 8SOIC IC COMP VOLT CMOS OD DUAL 8DIP IC COMP VOLT CMOS OD DUAL 8DIP IC COMP VOLT CMOS OD DUAL 8SOIC IC COMP VOLT CMOS OD DUAL 8DIP IC COMP VOLT CMOS OD DUAL 8SOIC
类型 通用 通用 通用 通用 通用 通用 通用 通用 通用
元件数 2 2 2 2 2 2 2 2 2
输出类型 CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL CMOS,NMOS,开路漏极,TTL
电压 - 电源,单/双(±) 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 12 V,±1.5 V ~ 6 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V 3 V ~ 10 V,±1.5 V ~ 5 V
封装/外壳 8-SOIC(0.154",3.90mm 宽) 8-DIP(0.300",7.62mm) 8-SOIC(0.154",3.90mm 宽) 8-SOIC(0.154",3.90mm 宽) 8-DIP(0.300",7.62mm) 8-DIP(0.300",7.62mm) 8-SOIC(0.154",3.90mm 宽) 8-DIP(0.300",7.62mm) 8-SOIC(0.154",3.90mm 宽)
安装类型 表面贴装 通孔 表面贴装 表面贴装 通孔 通孔 表面贴装 通孔 表面贴装
供应商器件封装 8-SOIC 8-PDIP 8-SOIC 8-SOIC 8-PDIP 8-PDIP 8-SOIC 8-PDIP 8-SOIC
电压 - 输入失调(最大值) 5mV @ 5V 5mV @ 5V - 10mV @ 5V 2mV @ 5V 10mV @ 5V 20mV @ 5V 20mV @ 5V 2mV @ 5V
电流 - 输入偏置(最大值) 200pA @ 5V 200pA @ 5V - 200pA @ 5V 200pA @ 5V 200pA @ 5V 4pA @ 5V 4pA @ 5V 200pA @ 5V
电流 - 输出(典型值) 60mA 60mA - 60mA 60mA 60mA 60mA 60mA 60mA
电流 - 静态(最大值) 180µA 180µA - 180µA 180µA 180µA 180µA 180µA 180µA
工作温度 0°C ~ 70°C 0°C ~ 70°C - 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C 0°C ~ 70°C
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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