AN26032A
Ultra small , Single Band LNA-IC
with Band-limiting filter for 600 MHz Band Applications
FEATURES
•
Low voltage operation
•
Low current consumption
4 mA typ. (High-Gain mode)
+2.85 V typ.
DESCRIPTION
AN26032A is single band LNA-IC for 600 MHz Band
applications.
It realizes high performance by using 0.18 µm SiGeC
Bi-CMOS process (f
T
= 90 GHz, f
max
= 140 GHz).
1 µA typ. (Low-Gain mode)
High/Low Gain mode is changeable, controlled by
•
High gain 14.0 dB typ. fRX = 620 MHz (High-Gain mode)
integrated CMOS logic circuit.
•
Low noise figure
The Band limiting filter is built-in.
1.20 dB typ. fRX = 620 MHz (High-Gain mode)
A WLCSP package (Wafer Level Chip Sized Package)
•
Low distortion (IIP3 +10 MHz offset)
achieves miniaturization.
4 dBm typ. fRX = 620 MHz (High-Gain mode)
•
Small and thin package 6 pin Wafer level chip size package
(WLCSP)
APPLICATIONS
DTV（UHF）
SIMPLIFIED APPLICATION
50
Ω
L2
RF output
Components
L1
L2
Size
0603
0603
0603
0603
Value
Part Number
Vendor
Murata
Murata
Murata
Murata
8.2 nH LQP03TN8N2H04
12 nH LQP03TN12NJ04
1 000 pF GRM033B11C102KD01
100 000 pF GRM33B30J104KE18
TOP VIEW
A3
B3
V
CC
C1
C2
A2
B2
C2
Notes)
This application circuit is an example. The operation of mass
production set is not guaranteed. You should perform enough
evaluation and verification on the design of mass production
set. You are fully responsible for the incorporation of the
above application circuit and information in the design of your
equipment.
A1
C1
L1
RF input
50
Ω
B1
CNT
(Gain cnt)
Publication date: February 2013
1
Ver. CEB
AN26032A
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage
Supply current
Operating ambient temperature
Operating junction temperature
Storage temperature
Symbol
V
CC
I
CC
T
opr
T
j
T
stg
IN (Pin No.A1)
CNT (Pin No.B1)
Input Voltage Range
OUT1 (Pin No.A3)
OUT2 (Pin No.B3)
ESD
HBM (Human Body Model)
Rating
3.6
18
–25 to+85
-40 to +125
–55 to +125
—
-0.3 to (V
CC
+ 0.3)
–0.3 to 1.4
–0.3 to 1.4
1
Unit
V
mA
°C
°C
°C
V
V
V
V
kV
Notes
*1
—
*2
*2
*2
*3
*4
—
—
—
Notes). This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating.
This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated
recommended operating range.
When subjected under the absolute maximum rating for a long time, the reliability of the product may be affected.
*1:The.values under the condition not exceeding the above absolute maximum ratings and the power dissipation
*2:Except for the operating ambient temperature, operating junction temperature, and storage temperature,
all ratings are for Ta = 25°C.
*3:RF signal input pin. Do not apply DC.
*4:(VCC + 0.3) V must not be exceeded 3.6V.
POWER DISSIPATION RATING
PACKAGE
WLCSP
θ
JA
1433℃/W
PD (Ta=25
°C)
0.070W
PD (Ta=85
°C)
0.028W
Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, supply
voltage, load and ambient temperature conditions to ensure that there is enough margin follow the power and
the thermal design does not exceed the allowable value.
CAUTION
Although this has limited built-in ESD protection circuit, but permanent damage may occur on it.
Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage range
Symbol
V
CC
Min.
2.5
Typ.
2.85
Max.
3.0
Unit
V
Notes
*1
Note) *1 : The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.
2
Ver. CEB
AN26032A
ELECRTRICAL CHARACTERISTICS
Note) Vcc = 2.85V
T
a
= 25°C±2°C unless otherwise specified
Parameter
DC electrical characteristics
Supply current HG
Supply current LG
Switching voltage
(High-Gain mode)
Switching voltage
(Low-Gain mode)
Switching current (High)
Symbol
Condition
Min
Limits
Typ
Max
Unit Note
IccH
IccL
VIH
VIL
IIH
Vcc current at High-Gain mode
No input signal
Vcc current at Low-Gain mode
No input signal
—
—
Current at CNT pin
VIH = Vcc
—
—
1.40
—
—
4.0
1.0
2.85
0.0
4
5.8
9.5
—
0.55
9.5
mA
μA
V
V
μA
—
—
—
—
—
ELECRTRICAL CHARACTERISTICS (continued)
Note) Vcc = 2.85 V
Ta = 25°C±2°C, fRX = 620 MHz, PRX = –30 dBm, CW unless otherwise specified.
Limits
Typ
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
Symbol
Condition
Min
Max
Unit Note
GHS
GLS
High-Gain mode
f = fRX
Low-Gain mode
f = fRX, PRX = –20 dBm
High-Gain mode
f1 = fRX + 10 MHz
f2 = fRX + 20 MHz
Input 2 signals (f1, f2)
12
–7
14
–4.5
16
–1.5
dB
dB
—
—
IIP3–10 MHz offset HG
IIP3H1S
–4
4
—
dBm
—
3
Ver. CEB
AN26032A
APPLICATION INFORMATION
REFERENCE VALUES FOR DESIGN
Notes) Vcc = 2.85 V
Ta = 25°C±2°C, fRX = 470 MHz, 620 MHz, 770 MHz, PRX = –30 dBm, CW unless otherwise specified.
Reference values
Parameter
AC electrical characteristics
Power Gain HG
Power Gain LG
Noise Figure HG
Noise Figure LG
GH
GL
NFH
NFL
High-Gain mode
f = fRX
Low-Gain mode
f = fRX, PRX = –20 dBm
High-Gain mode
f = fRX
Low-Gain mode
f = fRX
High-Gain mode
f1 = fRX + 10 MHz
f2 = fRX + 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
f1 = fRX – 10 MHz
f2 = fRX – 20 MHz
Input 2 signals (f1, f2)
High-Gain mode
f = fRX
High-Gain mode
f = fRX
High-Gain mode
f = fRX
High-Gain mode
f1 = 620 MHz
f2 = 1520 MHz
Gain(f2) – Gain(f1)
High-Gain mode
f1 = 620 MHz
f2 = 1880 MHz
Gain(f2) – Gain(f1)
10.9
–7.5
—
—
14
–4.5
1.3
4.5
16.5
–1.5
1.7
7.5
dB
dB
dB
dB
*1
*1
*1 ,*2
*1,*2
Symbol
Conditions
Min
Typ
Max
Unit
Note
IIP3 +10 MHz offset
HG
IIP3H1
–5
4
—
dBm
*1
IIP3 –10 MHz offset
HG
IIP3H2
–7
2
—
dBm
*1
Input P1dB HG
Reverse Isolation HG
Reverse Isolation LG
IP1dBH
ISOH
ISOL
–14
—
—
–10
–27
–4.5
—
—
—
dBm
dB
dB
*1
*1
*1
Attenuation1 HG
ATTH1
—
–31
–24
dB
*1
Attenuation2 HG
ATTH2
—
–49
–41
dB
*1
Note) *1 : Checked by design, not production tested.
*2 : Connector & substrate loss (0.1 dB) included.
4
Ver. CEB
AN26032A
APPLICATION INFORMATION (continued)
REFERENCE VALUES FOR DESIGN (continued)
Notes) Vcc = 2.5 V to 3.0 V
Ta = –25°C to 85°C unless otherwise specified.
Reference values
Parameter
DC electrical characteristics
Supply current HG
IccHT
Vcc current at High-Gain mode
No input signal
VCC current at Low-Gain
mode
No input signal
—
—
Current at CNT pin
VIH = Vcc
—
4.0
5.9
mA
*1
Symbol
Conditions
Min
Typ
Max
Unit
Note
Supply current LG
Switching voltage
(High Gain Mode)
Switching voltage
(Low Gain Mode)
Switching current (High)
IccHT
—
1.0
10
μA
*1
VIHT
VILT
IIHT
1.50
—
—
2.85
0.0
4
—
0.4
10
V
V
μA
*1
*1
*1
Note) *1 : Checked by design, not production tested.
5
Ver. CEB
