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AOZ8033DIL

IC emi filter 4line esd 8dfn

器件类别:半导体    模拟混合信号IC   

厂商名称:Alpha & Omega Semiconductor(万国半导体)

厂商官网:http://www.aosmd.com/about

器件标准:  

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器件参数
参数名称
属性值
Datasheets
AOZ8033
Product Photos
8-DFN
Standard Package
3,000
Category
Filters
Family
EMI/RFI Filters (LC, RC Networks)
系列
Packaging
Tape & Reel (TR)
类型
Type
Low Pass
技术
Technology
RC (Pi)
Number of Channels
4
Center / Cutoff Frequency
90MHz (Cutoff)
Attenuation Value
35dB @ 800MHz ~ 3GHz
Resistance - Channel (Ohms)
100
Curre
20mA
Values
R = 100 Ohms, C = 28pF
ESD Protecti
Yes
Filter Orde
2nd
Applications
Data Lines for Mobile Devices
封装 / 箱体
Package / Case
8-UFDFN Exposed Pad
Size / Dimensi
0.071" L x 0.047" W (1.80mm x 1.20mm)
Heigh
0.024" (0.60mm)
Operating Temperature
-40°C ~ 85°C
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4-Line EMI Filter with Integrated ESD Protection
AOZ8033
General Description
The AOZ8033 is an 4-line device integrating EMI filtering
with ESD protection for each line. It is designed to
suppress unwanted EMI/RFI signals and provide electro-
static discharge (ESD) protection in portable electronic
equipment. This state-of-the-art device utilizes AOS
leading edge Trench Vertical Structure [TVS]
2
technology for superior clamping performance and filter
attenuation over the full operating display range. The
AOZ8033 has been optimized for protection of color LCD
displays and CCD camera lines in cellular phones and
other portable consumer electronic devices.
The AOZ8033 consists of four identical circuits
comprised of TVS diodes for ESD protection, and a
resistor–capacitor network for EMI/RFI filtering.
A series resistor value of 100
and a capacitance
value of 28pF are used to achieve -35dB minimum
attenuation from 800MHz to 3.0GHz. The TVS diodes
provide effective suppression of ESD voltages in excess
of ±20kV (air discharge) and ±20kV (contact discharge).
This exceeds IEC 61000-4-2, level 4 ESD immunity test.
The AOZ8033 comes in an RoHS compliant, 1.2mm x
1.8mm, 0.4mm pitch DFN package and is rated over a
-40°C to +85°C ambient temperature range.
Features
4 lines for EMI filtering and ESD protection:
Exceeds IEC 61000-4-2, level 4 (ESD) immunity test
±20kV (air discharge) and ±20kV (contact discharge)
Trench Vertical Structure [TVS]
2
™ based technology
used to achieve excellent ESD clamping & filter
performance over the full operating display range
Filter performance: -35db attenuation from 800MHz to
3.0GHz
Low operating voltage: 5.0V
Capacitance stability over wide range of voltages and
temperatures
DFN package: 1.2mm x 1.8mm, 0.4mm pitch
Pb-Free device
Applications
EMI filtering and ESD protection for data lines
LCD displays, camera interface, I/O interface
Portable handheld devices, cell phones,
PDA phones
Typical Application
D0
100Ω
CH1
28pF
28pF
D1
100Ω
CH2
28pF
28pF
LCD/Camera
Module
D2
100Ω
CH3
28pF
28pF
D3
100Ω
CH4
28pF
28pF
Figure 1
Rev. 1.7 January 2009
www.aosmd.com
Page 1 of 7
AOZ8033
Ordering Information
Part Number
AOZ8033DIL
Ambient Temperature Range
-40°C to +85°C
Package
DFN-8
Environmental
RoHS Compliant
Green Product
All AOS products are offered in packages with Pb-free plating and compliant to RoHS standards.
Parts marked as Green Products (with “L” suffix) use reduced levels of Halogens, and are also RoHS compliant.
Please visit
www.aosmd.com/web/quality/rohs_compliant.jsp
for additional information.
Pin Configuration
1
8
8
7
6
5
Exposed Pad (GND)
1
2
7
2
3
4
4
5
3
6
DFN-8
(Bottom View)
Top View
Pin Description
Pin Number
1, 8
2, 7
3, 6
4, 5
Exposed Pad
Pin Name
CH 1
CH 2
CH 3
CH 4
GND
Pin Function
Channel 1 Connections
Channel 2 Connections
Channel 3 Connections
Channel 4 Connections
Common Ground Connection
Rev. 1.7 January 2009
www.aosmd.com
Page 2 of 7
AOZ8033
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Storage Temperature (T
S
)
ESD Rating per IEC61000-4-2, contact
(1)
ESD Rating per IEC61000-4-2, air
(1)
ESD Rating per Human Body Model
(2)
Notes:
1. IEC 61000-4-2 discharge with C
Discharge
= 150pF, R
Discharge
= 330
.
2. Human Body Discharge per MIL-STD-883, Method 3015 C
Discharge
= 100pF, R
Discharge
= 1.5k
.
Rating
-65°C to +150°C
±20kV
±20kV
±30kV
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Symbol
V
RWM
V
BR
I
R
V
CL
Parameter
Reverse Working Voltage
Reverse Breakdown Volt-
age
Reverse Leakage Current
Signal Clamp Voltage
(3)
Conditions
I
T
= 1mA
(4)
V
RWM
= 3.3V
I
LOAD
= 1A, positive clamp
(5)(6)
I
LOAD
= 1A, negative clamp
(5)(6)
I
LOAD
= 5A, positive clamp
(5)(6)
I
LOAD
= 5A, negative clamp
(5)(6)
I
LOAD
= 12A, positive clamp
(5)(6)
I
LOAD
= 12A, negative clamp
(5)(6)
Min.
6
Typ.
7
Max.
5.0
8
0.1
7.00
-3.00
8.00
-5.00
10.00
-10.00
Units
V
V
µA
V
R
CH
f
C
Total Series Resistance
Cut-off Frequency
Attenuation from 800MHz
to 3.0GHz
Attenuation from 800MHz
to 3.0GHz
I
R
= 20mA
Measured with 50
source and 50
load
termination
V
R
= 0V Measured with 50
source and 50
load termination
V
R
= 5V Measured with 50
source and 50
load termination
90
100
90
-35
-35
110
MHz
dB
dB
Notes:
3. The working peak reverse voltage, V
RWM
, should be equal to or greater than the DC or continuous peak operating voltage level.
4. V
BR
is measured at the pulse test current I
T
.
5. Measurements performed using a 100ns Transmission Line Pulse (TLP) system.
6. Guaranteed by design.
Rev. 1.7 January 2009
www.aosmd.com
Page 3 of 7
AOZ8033
Typical Performance Characteristics
Insertion Loss Characteristics
0
-5
-10
-15
S21 (db)
-20
-25
-30
-35
-40
-45
-50
1
10
100
Frequency (MHz)
1000
10000
Typical Line Capacitance vs. Reverse Bias Voltage
(Normalized to Capacitance @ 2.5V)
1.8
1.6
Normalized Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
2.0
3.0
4.0
5.0
Reverse Biased Voltage (V)
Analog Crosstalk
0
11
Clamping Voltage vs. Peak Pulse Current
Clamping Voltage, Vcl (V)
-20
10
S21 (db)
-40
9
-60
8
-80
7
-100
1
10
100
Frequency (MHz)
1000
10000
6
0
2
4
6
8
10
12
Peak Pulse Current, Ipp (A)
Forward Voltage vs. Forward Current
12
110
Typical Resistance vs. Temperature
10
105
Forward Voltage (V)
8
Resistance (Ω)
100
6
4
95
2
0
2
4
6
8
10
12
Forward Current (A)
90
-45
-25
-5
5
25
45
65
85
Temparature (°C)
Rev. 1.7 January 2009
www.aosmd.com
Page 4 of 7
AOZ8033
Package Dimensions, DFN 1.2 x 1.8, 8L
D1
D
b
e
D2
E
L
Pin 1
Marking
E1
TOP VIEW
BOTTOM VIEW
Pin 1 ID
(C0.2x45°)
A
SIDE VIEW
A1
A3
Dimensions in millimeters
Symbols
Min.
0.50
0.00
Nom.
Max.
A
A1
A3
b
D
D1
D2
E
E1
e
L
0.55
0.60
0.05
0.152 Ref.
0.15
0.20
0.25
1.80
1.00
0.200 Ref.
1.15
1.20
0.25
0.30
1.75
0.95
1.85
1.05
1.25
0.35
Dimensions in inches
Symbols
A
A1
A3
b
D
D1
D2
E
E1
e
L
Min.
0.020
0.000
Nom.
Max.
0.022 0.024
0.002
0.006 Ref.
0.006 0.008 0.010
0.069
0.037
0.071 0.073
0.039 0.041
0.008 Ref.
0.045 0.047 0.049
0.010 0.012 0.014
0.016 BSC
0.008 0.010 0.012
RECOMMENDED LAND PATTERN
0.20
0.20
1.00
0.20
0.20
0.20
0.30
1.00
0.40 BSC
0.20
0.25
0.30
0.40
0.20
0.30
Notes:
1. Controlling dimension is millimeter, converted inch dimensions are not necessaily exact.
2. Warpage shall not exceed 0.10mm.
3. Marking is for package orientation reference only.
Rev. 1.7 January 2009
www.aosmd.com
Page 5 of 7
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参数对比
与AOZ8033DIL相近的元器件有:AOZ8033DI。描述及对比如下:
型号 AOZ8033DIL AOZ8033DI
描述 IC emi filter 4line esd 8dfn IC emi filter 4line esd 8dfn
Standard Package 3,000 3,000
Category Filters Filters
Family EMI/RFI Filters (LC, RC Networks) EMI/RFI Filters (LC, RC Networks)
系列
Packaging
Tape & Reel (TR) Tape & Reel (TR)
类型
Type
Low Pass Low Pass
技术
Technology
RC (Pi) RC (Pi)
Number of Channels 4 4
Center / Cutoff Frequency 90MHz (Cutoff) 90MHz (Cutoff)
Attenuation Value 35dB @ 800MHz ~ 3GHz 35dB @ 800MHz ~ 3GHz
Resistance - Channel (Ohms) 100 100
Curre 20mA 20mA
Values R = 100 Ohms, C = 28pF R = 100 Ohms, C = 28pF
ESD Protecti Yes Yes
Filter Orde 2nd 2nd
Applications Data Lines for Mobile Devices Data Lines for Mobile Devices
封装 / 箱体
Package / Case
8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
Size / Dimensi 0.071" L x 0.047" W (1.80mm x 1.20mm) 0.071" L x 0.047" W (1.80mm x 1.20mm)
Heigh 0.024" (0.60mm) 0.024" (0.60mm)
Operating Temperature -40°C ~ 85°C -40°C ~ 85°C
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