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AR251

25 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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AR2505 THRU AR2510
Features
· Plastic material used carries Underwriters Laboratory
Classification 94V-0
· Low cost construction utilizing void-free
molded plastic technique
· Low cost
· Diffused junctions
· Low leakage
· High surge capability
· High temperature soldering guaranteed :
250
for 10 seconds
CURRENT 25.0 Amperes
VOLTAGE 50 to 1000 Volts
AR
0.185(4.7)
0.165(4.2)
0.250(6.4)
0.235(6.0)
Mechanical Data
· Case : AR molded plastic
· Terminals : Plated terminals, solderable per
MIL-STD-750, method 208
· Polarity : Color ring denotes cathode end
· Mounting Position : Any
· Weight : 0.07 ounce, 1.8 gram
0.225(5.7)
0.215(5.5)
0.410(10.4)
0.380(9.7)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=150℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) T
J
=150℃
Maximum instantaneous forward voltage
at 25.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25℃
T
C
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
JC
T
J
T
STG
AR
2505
50
35
50
AR
251
100
70
100
AR
252
200
140
200
AR
254
400
280
400
25.0
400
1.0
5.0
250
3.0
300
1.0
-50 to +175
AR
256
600
420
600
AR
258
800
560
800
AR
2510
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
μS
pF
℃/W
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 1) T
J
=25℃
Typical thermal resistance (Note 3)
Operating and storage temperature range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Reverse recovery test conditions:I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(3) Thermal resistance from junction to case, single side cooled.
RATINGS AND CHARACTERISTIC CURVES AR2505 THRU AR2510
AVERAGE FORWARD CURRENT. (A)
PEAK FORWARD SURGE CURRENT. (A)
50
40
30
20
10
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
HALF SINE WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
600
400
300
200
Tj=150 C
O
8.3ms Single Half Wave
JEDEC Method
Tj=25
O
C
Cycle
100
80
601
10
NUMBER OF CYCLES AT 60Hz
100
0
125
135
145
155
165
AMBIENT TEMPERATURE. (
O
C)
175
1000
INSTANTANEOUS FORWARD CURRENT. (A)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT. (uA)
60
40
20
10
6
4
2
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
Tj=100
O
C
10
1
0.6
0.4
0.2
0.1
0
20
40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSEVOLTAGE. (%)
Tj=25
O
C
1.0
Tj=25 C
PULSE WIDTH-300uS
2% DUTY CYCLE
O
0.1
0.6
1.0
1.4
1.8
2.2
FORWARD VOLTAGE. (V)
2.6
1000
JUNCTION CAPACITANCE.(pF)
FIG.5- TYPICAL JUNCTION CAPACITANCE
500
Tj=25 C
O
100
f=1.0MHz
Vsig=50mVp-p
50
1
2
5
10
20
50
REVERSE VOLTAGE. (V)
1 00
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参数对比
与AR251相近的元器件有:AR2505、AR252、AR254、AR2510、AR256、AR258。描述及对比如下:
型号 AR251 AR2505 AR252 AR254 AR2510 AR256 AR258
描述 25 A, 50 V, SILICON, RECTIFIER DIODE 25 A, 100 V, SILICON, RECTIFIER DIODE 25 A, 100 V, SILICON, RECTIFIER DIODE 25 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE 25 A, 800 V, SILICON, RECTIFIER DIODE 25 A, 100 V, SILICON, RECTIFIER DIODE
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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