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AR351

35 A, 50 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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AR3505 THRU AR3510
Features
· Plastic material used carries Underwriters Laboratory
Classification 94V-0
· Low cost construction utilizing void-free
molded plastic technique
· Low cost
· Diffused junctions
· Low leakage
· High surge capability
· High temperature soldering guaranteed :
250
for 10 seconds
CURRENT 35.0 Amperes
VOLTAGE 50 to 1000 Volts
AR
0.185(4.7)
0.165(4.2)
0.250(6.4)
0.235(6.0)
Mechanical Data
· Case : AR molded plastic
· Terminals : Plated terminals, solderable per
MIL-STD-750, method 208
· Polarity : Color ring denotes cathode end
· Mounting Position : Any
· Weight : 0.07 ounce, 1.8 gram
0.225(5.7)
0.215(5.5)
0.410(10.4)
0.380(9.7)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=150℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) T
J
=150℃
Maximum instantaneous forward voltage
at 35.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25℃
T
C
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
trr
C
J
JC
T
J
T
STG
AR
3505
50
35
50
AR
351
100
70
100
AR
352
200
140
200
AR
354
400
280
400
35.0
500
1.0
5.0
250
3.0
300
1.0
-50 to +175
AR
356
600
420
600
AR
358
800
560
800
AR
3510
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
μS
pF
℃/W
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 1) T
J
=25℃
Typical thermal resistance (Note 3)
Operating and storage temperature range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Reverse recovery test conditions:I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(3) Thermal resistance from junction to case, single side cooled.
RATINGS AND CHARACTERISTIC CURVES AR3505 THRU AR3510
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
35
30
25
20
15
10
5
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
SINGLE PHASE
HALF SINE WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
1000
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Wave
JEDEC Method
500
100
50
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
1 00
0
125
135
145
155
165
O
AMBIENT TEMPERATURE. ( C)
175
FIG.3- TYPICAL FORWARD CHARACTERISTICS
1000
100
INSTANTANEOUS REVERSE CURRENT. (uA)
60
40
20
10
6
4
2
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
100
Tj=100 C
O
10
1
0.6
0.4
0.2
0.1
0
20
40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSEVOLTAGE. (%)
Tj=25
O
C
1.0
Tj=25 C
PULSE WIDTH-300uS
2% DUTY CYCLE
O
0.1
0.6
1.0
1.4
1.8
FORWARD VOLTAGE. (V)
2.2
2.6
FIG.5- TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE.(pF)
500
Tj=25 C
O
100
50
1
f=1.0MHz
Vsig=50mVp-p
2
5
10
20
50
REVERSE VOLTAGE. (V)
1 00
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参数对比
与AR351相近的元器件有:AR3505、AR354、AR352、AR3510、AR358、AR356。描述及对比如下:
型号 AR351 AR3505 AR354 AR352 AR3510 AR358 AR356
描述 35 A, 50 V, SILICON, RECTIFIER DIODE 35 A, 50 V, SILICON, RECTIFIER DIODE 35 A, 400 V, SILICON, RECTIFIER DIODE 35 A, 100 V, SILICON, RECTIFIER DIODE 35 A, 1000 V, SILICON, RECTIFIER DIODE 35 A, 50 V, SILICON, RECTIFIER DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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