型号
- 型号
- 关键词
| 型号 | AT28HC256E-12SU | AT28HC256-12TU | AT28HC256E-12TU | AT28HC256E-90SU | AT28HC256-70TU | AT28HC256-12JU |
|---|---|---|---|---|---|---|
| 描述 | eeprom parallel eeprom 5V-120ns, 883c, GR | eeprom 256k 5V sdp - 120ns ind temp | eeprom parallel eeprom 5V-120ns, 883c, GR | eeprom 256k HI-endurance sdp - 90ns ind temp | eeprom parallel eeprom 5V, sdp-70ns, GR | eeprom 256k 5V sdp - 120ns ind temp |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | SOP, SOP28,.4 | TSOP1, TSSOP28,.53,22 | TSOP1, TSSOP28,.53,22 | SOP, SOP28,.4 | TSOP1, TSSOP28,.53,22 | QCCJ, LDCC32,.5X.6 |
| Reach Compliance Code | compli | unknow | compli | compli | compli | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 120 ns | 120 ns | 120 ns | 90 ns | 70 ns | 120 ns |
| 命令用户界面 | NO | NO | NO | NO | NO | NO |
| 数据轮询 | YES | YES | YES | YES | YES | YES |
| 耐久性 | 100000 Write/Erase Cycles | 10000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles |
| JESD-30 代码 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 | R-PQCC-J32 |
| 长度 | 17.9 mm | 11.8 mm | 11.8 mm | 17.9 mm | 11.8 mm | 13.97 mm |
| 内存密度 | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bi | 262144 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 32 |
| 字数 | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| 字数代码 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | TSOP1 | TSOP1 | SOP | TSOP1 | QCCJ |
| 封装等效代码 | SOP28,.4 | TSSOP28,.53,22 | TSSOP28,.53,22 | SOP28,.4 | TSSOP28,.53,22 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | CHIP CARRIER |
| 页面大小 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 编程电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.65 mm | 1.2 mm | 1.2 mm | 2.65 mm | 1.2 mm | 3.556 mm |
| 最大压摆率 | 0.08 mA | 0.08 mA | 0.08 mA | 0.08 mA | 0.08 mA | 0.08 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | J BEND |
| 端子节距 | 1.27 mm | 0.55 mm | 0.55 mm | 1.27 mm | 0.55 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | QUAD |
| 切换位 | YES | YES | YES | YES | YES | YES |
| 宽度 | 7.5 mm | 8 mm | 8 mm | 7.5 mm | 8 mm | 11.43 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| 厂商名称 | Atmel (Microchip) | Atmel (Microchip) | Atmel (Microchip) | - | Atmel (Microchip) | Atmel (Microchip) |
| 零件包装代码 | SOIC | TSOP1 | TSOP1 | SOIC | - | QFJ |
| 针数 | 28 | 28 | 28 | 28 | - | 32 |
| 最大待机电流 | 0.0003 A | 0.0003 A | 0.0003 A | 0.0003 A | - | 0.0003 A |
| JESD-609代码 | - | e3 | - | e3 | e3 | e3 |
| 端子面层 | - | Matte Tin (Sn) | - | Matte Tin (Sn) - annealed | MATTE TIN | Matte Tin (Sn) |
