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AT29C512-70JU

64K X 8 FLASH 5V PROM, 70 ns, PQCC32
64K × 8 FLASH 5V 可编程只读存储器, 70 ns, PQCC32

器件类别:存储    存储   

厂商名称:Atmel (Microchip)

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
QFJ
包装说明
PLASTIC, MS-016AE, LCC-32
针数
32
Reach Compliance Code
unknow
ECCN代码
EAR99
最长访问时间
70 ns
命令用户界面
NO
数据轮询
YES
耐久性
10000 Write/Erase Cycles
JESD-30 代码
R-PQCC-J32
JESD-609代码
e3
长度
13.97 mm
内存密度
524288 bi
内存集成电路类型
FLASH
内存宽度
8
湿度敏感等级
2
功能数量
1
部门数/规模
512
端子数量
32
字数
65536 words
字数代码
64000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
64KX8
封装主体材料
PLASTIC/EPOXY
封装代码
QCCJ
封装等效代码
LDCC32,.5X.6
封装形状
RECTANGULAR
封装形式
CHIP CARRIER
页面大小
128 words
并行/串行
PARALLEL
峰值回流温度(摄氏度)
245
电源
5 V
编程电压
5 V
认证状态
Not Qualified
座面最大高度
3.556 mm
部门规模
128
最大待机电流
0.0003 A
最大压摆率
0.05 mA
最大供电电压 (Vsup)
5.25 V
最小供电电压 (Vsup)
4.75 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
J BEND
端子节距
1.27 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
切换位
YES
类型
NOR TYPE
宽度
11.43 mm
最长写入周期时间 (tWC)
10 ms
Base Number Matches
1
文档预览
Features
Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time – 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Green (Pb/Halide-free) Packaging Option
512K (64K x 8)
5-volt Only
Flash Memory
AT29C512
1. Description
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW over the industrial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 300 µA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29C512 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the sector and then program
the latched data using an internal control timer. The end of a program cycle can be
detected by DATA polling of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
0456i–FLASH–9/08
2. Pin Configurations
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O7
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
2.1
32-lead PLCC Top View
A12
A15
NC
NC
VCC
WE
NC
2.2
32-lead TSOP (Type 1) Top View
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
14
15
16
17
18
19
20
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
2
AT29C512
0456i–FLASH–9/08
AT29C512
3. Block Diagram
4. Device Operation
4.1
Read
The AT29C512 is accessed like an EPROM. When CE and OE are low and WE is high, the data
stored at the memory location determined by the address pins is asserted on the outputs. The
outputs are put in the high impedance state whenever CE or OE is high. This dual-line control
gives designers flexibility in preventing bus contention.
4.2
Byte Load
Byte loads are used to enter the 128 bytes of a sector to be programmed or the software codes
for data protection. A byte load is performed by applying a low pulse on the WE or CE input with
CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE or
WE, whichever occurs last. The data is latched by the first rising edge of CE or WE.
4.3
Program
The device is reprogrammed on a sector basis. If a byte of data within a sector is to be changed,
data for the entire sector must be loaded into the device. Any byte that is not loaded during the
programming of its sector will be indeterminate. Once the bytes of a sector are loaded into the
device, they are simultaneously programmed during the internal programming period. After the
first data byte has been loaded into the device, successive bytes are entered in the same man-
ner. Each new byte to be programmed must have its high-to-low transition on WE (or CE) within
150 µs of the low-to-high transition of WE (or CE) of the preceding byte. If a high-to-low transi-
tion is not detected within 150 µs of the last low-to-high transition, the load period will end and
the internal programming period will start. A7 to A15 specify the sector address. The sector
address must be valid during each high-to-low transition of WE (or CE). A0 to A6 specify the
byte address within the sector. The bytes may be loaded in any order; sequential loading is not
required. Once a programming operation has been initiated, and for the duration of t
WC
, a read
operation will effectively be a polling operation.
3
0456i–FLASH–9/08
4.4
Software Data Protection
A software controlled data protection feature is available on the AT29C512. Once the software
protection is enabled a software algorithm must be issued to the device before a program may
be performed. The software protection feature may be enabled or disabled by the user; when
shipped from Atmel, the software data protection feature is disabled. To enable the software
data protection, a series of three program commands to specific addresses with specific data
must be performed. After the software data protection is enabled the same three program com-
mands must begin each program cycle in order for the programs to occur. All software program
commands must obey the sector program timing specifications. Once set, the software data pro-
tection feature remains active unless its disable command is issued. Power transitions will not
reset the software data protection feature; however, the software feature will guard against inad-
vertent program cycles during power transitions.
Once set, software data protection will remain active unless the disable command sequence is
issued.
After setting SDP, any attempt to write to the device without the 3-byte command sequence will
start the internal write timers. No data will be written to the device; however, for the duration of
t
WC
, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code is given, a byte load is performed by
applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The
address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by
the first rising edge of CE or WE. The 128 bytes of data must be loaded into each sector by the
same procedure as outlined in the program section under device operation.
4.5
Hardware Data Protection
Hardware features protect against inadvertent programs to the AT29C512 in the following ways:
(a) V
CC
sense – if V
CC
is below 3.8V (typical), the program function is inhibited; (b) V
CC
power on
delay – once V
CC
has reached the V
CC
sense level, the device will automatically time out 5 ms
(typical) before programming; (c) Program inhibit – holding any one of OE low, CE high or WE
high inhibits program cycles; and (d) Noise filter – pulses of less than 15 ns (typical) on the WE
or CE inputs will not initiate a program cycle.
4.6
Product Identification
The product identification mode identifies the device and manufacturer as Atmel. It may be
accessed by hardware or software operation. The hardware operation mode can be used by an
external programmer to identify the correct programming algorithm for the Atmel product. In
addition, users may wish to use the software product identification mode to identify the part (i.e.,
using the device code), and have the system software use the appropriate sector size for pro-
gram operations. In this manner, the user can have a common board design for 256K to 4-
megabit densities and, with each density’s sector size in a memory map, have the system soft-
ware apply the appropriate sector size.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
4
AT29C512
0456i–FLASH–9/08
AT29C512
4.7
DATA Polling
The AT29C512 features DATA polling to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in the complement of the loaded data
on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the
next cycle may begin. DATA polling may begin at any time during the program cycle.
4.8
Toggle Bit
In addition to DATA polling the AT29C512 provides another method for determining the end of a
program or erase cycle. During a program or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and zero. Once the program cycle has
completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin
at any time during a program cycle.
4.9
Optional Chip Erase Mode
The entire device can be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
5. Absolute Maximum Ratings*
Temperature Under Bias............................... -55° C to +125° C
Storage Temperature .................................... -65° C to +150° C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
5
0456i–FLASH–9/08
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参数对比
与AT29C512-70JU相近的元器件有:AT29C512-70TU、AT29C512_08。描述及对比如下:
型号 AT29C512-70JU AT29C512-70TU AT29C512_08
描述 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
内存宽度 8 8 8
功能数量 1 1 1
端子数量 32 32 32
组织 64KX8 64KX8 64K × 8
表面贴装 YES YES Yes
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 J BEND GULL WING J BEND
端子位置 QUAD DUAL
是否Rohs认证 符合 符合 -
零件包装代码 QFJ TSOP1 -
包装说明 PLASTIC, MS-016AE, LCC-32 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 -
针数 32 32 -
Reach Compliance Code unknow unknow -
ECCN代码 EAR99 EAR99 -
最长访问时间 70 ns 70 ns -
命令用户界面 NO NO -
数据轮询 YES YES -
耐久性 10000 Write/Erase Cycles 10000 Write/Erase Cycles -
JESD-30 代码 R-PQCC-J32 R-PDSO-G32 -
JESD-609代码 e3 e3 -
长度 13.97 mm 18.4 mm -
内存密度 524288 bi 524288 bi -
内存集成电路类型 FLASH FLASH -
湿度敏感等级 2 3 -
部门数/规模 512 512 -
字数 65536 words 65536 words -
字数代码 64000 64000 -
工作模式 ASYNCHRONOUS ASYNCHRONOUS -
最高工作温度 85 °C 85 °C -
最低工作温度 -40 °C -40 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 QCCJ TSOP1 -
封装等效代码 LDCC32,.5X.6 TSSOP32,.8,20 -
封装形状 RECTANGULAR RECTANGULAR -
封装形式 CHIP CARRIER SMALL OUTLINE, THIN PROFILE -
页面大小 128 words 128 words -
并行/串行 PARALLEL PARALLEL -
峰值回流温度(摄氏度) 245 NOT SPECIFIED -
电源 5 V 5 V -
编程电压 5 V 5 V -
认证状态 Not Qualified Not Qualified -
座面最大高度 3.556 mm 1.2 mm -
部门规模 128 128 -
最大待机电流 0.0003 A 0.0003 A -
最大压摆率 0.05 mA 0.05 mA -
最大供电电压 (Vsup) 5.25 V 5.25 V -
最小供电电压 (Vsup) 4.75 V 4.75 V -
标称供电电压 (Vsup) 5 V 5 V -
技术 CMOS CMOS -
端子面层 Matte Tin (Sn) Matte Tin (Sn) -
端子节距 1.27 mm 0.5 mm -
处于峰值回流温度下的最长时间 40 NOT SPECIFIED -
切换位 YES YES -
类型 NOR TYPE NOR TYPE -
宽度 11.43 mm 8 mm -
最长写入周期时间 (tWC) 10 ms 10 ms -
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