JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
TO-251
B772
TRANSISTOR (PNP)
FEATURES
Low Speed Switching
1. EMITTER
2. COLLECTOR
3 BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ӨJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Value
-40
-30
-6
-3
1.25
100
150
-55-150
Unit
V
V
V
A
W
℃/W
℃
℃
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test
conditions
Min
-40
-30
-6
-1
-10
-1
60
400
-0.5
-1.5
50
80
V
V
MHz
Typ
Max
U
nit
V
V
V
μA
μA
μA
I
C
=-100μA ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100μA,I
C
=0
V
CB
= -40V, I
E
=0
V
CE
=-30V, I
B
=0
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
I
C
=-2A, I
B
= -0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V, I
C
=-0.1A
f
T
f =
10MHz
CLASSIFICATION OF h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
A,Jun,2011
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