DIODE SILICON, MIXER DIODE, Microwave Mixer Diode
厂商名称:NXP(恩智浦)
厂商官网:https://www.nxp.com
下载文档型号 | BA423AL135 | BA423AL112 | BA423AL115 |
---|---|---|---|
描述 | DIODE SILICON, MIXER DIODE, Microwave Mixer Diode | DIODE SILICON, MIXER DIODE, Microwave Mixer Diode | DIODE SILICON, MIXER DIODE, Microwave Mixer Diode |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
包装说明 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
最小击穿电压 | 20 V | 20 V | 20 V |
外壳连接 | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE | SINGLE |
最大二极管电容 | 2.5 pF | 2.5 pF | 2.5 pF |
二极管元件材料 | SILICON | SILICON | SILICON |
二极管类型 | MIXER DIODE | MIXER DIODE | MIXER DIODE |
最大正向电压 (VF) | 0.9 V | 0.9 V | 0.9 V |
JESD-30 代码 | O-LELF-R2 | O-LELF-R2 | O-LELF-R2 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 |
最高工作温度 | 150 °C | 150 °C | 150 °C |
最大输出电流 | 50 A | 50 A | 50 A |
封装主体材料 | GLASS | GLASS | GLASS |
封装形状 | ROUND | ROUND | ROUND |
封装形式 | LONG FORM | LONG FORM | LONG FORM |
最大功率耗散 | 0.21 W | 0.21 W | 0.21 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
最大反向电流 | 0.1 µA | 0.1 µA | 0.1 µA |
表面贴装 | YES | YES | YES |
端子形式 | WRAP AROUND | WRAP AROUND | WRAP AROUND |
端子位置 | END | END | END |