BA679.BA679S
Vishay Telefunken
RF PIN Diodes
Features
D
Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
94 9371
Order Instruction
Type
BA679
BA679S
Type Differentiation
V
R
= 30 V, Z
r
>5kΩ
V
R
= 30 V, Z
r
>9kΩ
Ordering Code
BA679–GS08
BA679S–GS08
Remarks
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
R
I
F
T
j
T
stg
Value
30
50
125
–55...+125
Unit
V
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Diode capacitance
Differential forward
resistance
Reverse impedance
Minority carrier lifetime
Test Conditions
I
F
=20mA
V
R
=30 V
f=100MHz, V
R
=0
f=100MHz, I
F
=1.5mA
f=100MHz,
f=100MHz V
R
=0
I
F
=10mA, I
R
=10mA
BA679
BA679S
Type
Symbol
V
F
I
R
C
D
r
f
z
r
z
r
5
9
4
Min
Typ
Max
1
50
0.5
50
Unit
V
nA
pF
t
W
k
W
k
W
m
s
Document Number 85529
Rev. 4, 13-Feb-01
www.vishay.com
1 (4)
BA679.BA679S
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
100
I
F
– Forward Current ( mA )
a – Typical Cross Modulation Distortion ( dB )
20
10
T
amb
= 25°C
1
Scattering Limit
0.1
0
P
–Circuit with 10 dB Attenuation
V
0
= 40 dB mV
f
1
= 100 MHz unmodulated
–20
–40
–60
–80
0
20
40
60
80
f
2
, modulated with 200 kHz, m=100% (MHz)
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
95 9733
V
F
– Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
r
f
– Differential Forward Resistance (
W
)
10000
Figure 3. Typ. Cross Modulation Distortion vs.
Frequency f
2
1000
100
f >20 MHz
T
j
= 25°C
10
1
0.001
95 9734
0.01
0.1
1
10
I
F
– Forward Current ( mA )
Figure 2. Differential Forward Resistance vs.
Forward Current
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2 (4)
Document Number 85529
Rev. 4, 13-Feb-01
BA679.BA679S
Vishay Telefunken
Dimensions in mm
96 12070
Document Number 85529
Rev. 4, 13-Feb-01
www.vishay.com
3 (4)
BA679.BA679S
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 85529
Rev. 4, 13-Feb-01
