BAR88...
Silicon PIN Diode
•
Optimized for low current antenna switches
in hand held applications
•
Very low forward resistance
(typ. 1.5
Ω
@
I
F
= 1 mA)
•
Low capacitance at zero volt reverse bias
at frequencies above 1 GHz (typ. 0.28 pF)
•
Very low signal distortion
BAR88-02L
BAR88-02V
BAR88-07L4
4
3
BAR88-099L4
4
3
1
2
D 1
D 2
D 1
D 2
1
2
1
2
Type
BAR88-02L
BAR88-02V
BAR88-07L4*
BAR88-099L4*
Package
TSLP-2-1
SC79
TSLP-4-4
TSLP-4-4
Configuration
single, leadless
single
parallel pair, leadless
anti-parallel pair, leadless
L
S
(nH)
0.4
0.6
0.4
0.4
Marking
UU
U
UT
US
* Preliminary Data
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR88-02L, -07L4, -099L4
T
s
≤
133°C
BAR88-02V,
T
s
≤
123°C
Junction temperature
Operating temperature range
Storage temperature
T
j
T
op
T
stg
Symbol
V
R
I
F
P
tot
250
250
150
-55 ... 125
-55 ... 150
°C
Value
80
100
Unit
V
mA
mW
1
Dec-08-2003
BAR88...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR88-02L, 07L4, -099L4
BAR88-02V
Symbol
R
thJS
≤
65
≤
105
Value
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 60 V
Forward voltage
I
F
= 1 mA
I
F
= 100 mA
1
For
Unit
max.
-
50
V
nA
V
typ.
-
-
V
(BR)
I
R
V
F
80
-
-
-
0.75
0.95
0.9
1.2
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Dec-08-2003
BAR88...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 5 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR88-02L
Unit
max.
pF
typ.
C
T
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
0.3
0.4
0.28
0.25
65
2.5
1.5
1.5
0.8
0.6
500
0.4
-
-
-
kΩ
-
-
-
Ω
2.5
-
-
-
ns
-
W
I
|S
21
|
2
-
-
-
-
13
-0.11
-0.07
-0.06
-15
-11
-9
-
-
-
-
-
-
-
µm
dB
|S
21
|
2
-
-
-
in series configuration,
Z
= 50
Ω
3
Dec-08-2003
BAR88...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= Parameter
0.5
pF
Reverse parallel resistance
R
P
=
ƒ
(V
R
)
f
= Parameter
10
4
KOhm
10
3
0.4
0.35
1 MHz
100 MHz
1 GHz
1.8 GHz
100 MHz
C
T
R
p
10
2
1 GHz
0.3
10
1
1.8 GHz
0.25
0.2
10
0
0.15
10
-1
0
0.1
0
2
4
6
8
10
12
14
16
V
20
2
4
6
8
10
12
14
16
V
20
V
R
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 100MHz
10
2
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
10
-1
10
-2
Ohm
10
1
10
-3
IF
10
-4
10
-5
-40°C
+25°C
+85°C
+125°C
r
f
10
0
10
-6
10
-7
10
-8
10
-1 -2
10
10
-1
10
0
10
1
mA
10
2
10
-9
0
0.2
0.4
0.6
0.8
V
VF
1.2
I
F
4
Dec-08-2003
BAR88...
Forward current
I
F
=
ƒ
(T
S
)
BAR88-02L, -07L4, -099L4
120
mA
100
90
80
Forward current
I
F
=
ƒ
(T
S
)
BAR88-02V
120
mA
100
90
80
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAR88-02L, -07L4, -099L4
10
2
Permissible Pulse Load
I
Fmax
/
I
FDC
=
ƒ
(t
p
)
BAR88-02L, -07L4, -099L4
10
2
K/W
I
Fmax
/I
FDC
R
thJS
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
10
-1
°C
10
1
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
°C
10
0
t
p
t
p
5
Dec-08-2003
