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BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Configuration
single
dual common anode
dual series
Package
NXP
BAS21W
BAS21AW
BAS21SW
SOT323
JEDEC
SC-70
Package
configuration
very small
Type number
1.2 Features
I
High switching speed: t
rr
≤
50 ns
I
Low leakage current
I
High reverse voltage: V
R
≤
250 V
I
Low capacitance: C
d
≤
2 pF
I
Very small SMD plastic package
I
AEC-Q101 qualified
1.3 Applications
I
High-speed switching
I
General-purpose switching
I
Voltage clamping
I
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
F
I
R
V
R
t
rr
[1]
[2]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[2]
Conditions
[1]
Min
-
-
-
-
Typ
-
-
-
-
Max
225
100
250
50
Unit
mA
nA
V
ns
V
R
= 200 V
Single diode loaded.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
NXP Semiconductors
BAS21W series
High-voltage switching diodes
2. Pinning information
Table 3.
Pin
BAS21W
1
2
3
anode
not connected
cathode
1
2
3
1
3
2
006aaa764
Pinning
Description
Simplified outline
Graphic symbol
BAS21AW
1
2
3
cathode (diode 1)
cathode (diode 2)
common anode
1
2
1
2
006aab099
3
3
BAS21SW
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
1
2
1
2
006aaa763
3
3
3. Ordering information
Table 4.
Ordering information
Package
Name
BAS21W
BAS21AW
BAS21SW
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
2 of 11
NXP Semiconductors
BAS21W series
High-voltage switching diodes
4. Marking
Table 5.
BAS21W
BAS21AW
BAS21SW
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
X4*
X6*
X5*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
square wave
t
p
= 1
µs
t
p
= 100
µs
t
p
= 10 ms
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[3]
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
Max
250
225
125
625
Unit
V
mA
mA
mA
-
-
-
[4]
9
3
1.7
200
150
+150
+150
A
A
A
mW
°C
°C
°C
total power dissipation
junction temperature
ambient temperature
storage temperature
Single diode loaded.
Double diode loaded.
T
j
= 25
°C
prior to surge.
T
amb
≤
25
°C
-
-
−55
−65
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
3 of 11
NXP Semiconductors
BAS21W series
High-voltage switching diodes
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
625
300
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
I
R
C
d
t
rr
[1]
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Conditions
I
F
= 100 mA
I
F
= 200 mA
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0 V
[1]
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
Max
1.0
1.25
100
100
2
50
Unit
V
V
nA
µA
pF
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
BAS21W_SER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 9 October 2009
4 of 11
