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BAS40T

SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Diodes

厂商官网:http://www.diodes.com/

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BAS40T/-04T/-05T/-06T
Lead-free
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
·
·
·
·
·
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
PN Junction Guard Ring for Transient and ESD Protection
Lead Free/RoHS Compliant (Note 3
)
B C
A
SOT-523
Dim
A
B
C
D
G
H
K
M
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: See Diagrams Below
Marking: See Diagrams Below & Page 2
Weight: 0.002 grams (approximate)
Ordering Information, see Page 2
J
D
G
H
J
K
L
N
L
M
N
a
All Dimensions in mm
TOP VIEW
BAS40T Marking: 43
BAS40-04T Marking: 44
BAS40-05T Marking: 45
BAS40-06T Marking: 46
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient (Note 1)
Operating Temperature Range
Storage Temperature Range
@ t = 1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
40
¾
¾
¾
¾
Max
¾
380
1000
200
5.0
5.0
Unit
V
mV
mV
nA
pF
ns
Test Condition
I
R
= 10mA
I
F
= 1.0mA, t
p
< 300ms
I
F
= 40mA, t
p
< 300ms
V
R
= 30V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Value
40
28
200
600
150
833
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30265 Rev. 10 - 2
1 of 3
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BAS40T/-04T/-05T/-06T
ã
Diodes Incorporated
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
10000
T
A
= 125ºC
0.1
1000
T
A
= 75ºC
100
0.01
T
A
= -40ºC
T
A
= 0ºC
T
A
= 25ºC
T
A
= 25ºC
10
T
A
= 0ºC
0.001
1
T
A
= -40ºC
T
A
= 75ºC
T
A
= 125ºC
0.0001
0
0.2
0.4
0.6
0.8
1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Voltage
0.1
0
10
20
30
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
200
3
f = 1MHz
C
T
, TOTAL CAPACITANCE (pF)
P
d
, POWER DISSIPATION (mW)
150
2
100
1
50
0
0
10
20
30
40
0
0
40
80
120
160
200
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 4 Power Derating Curve, Total Package
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance
Ordering Information
Device
BAS40T-7-F
(Note 4)
Packaging
SOT-523
SOT-523
SOT-523
SOT-523
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
BAS40-04T-7-F
BAS40-05T-7-F
BAS40-06T-7-F
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XX = Product Type Marking Code (See Page 1, e.g. 43 = BAS40T)
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
XXYM
Date Code Key
Year
Code
Month
Code
2001
M
Jan
1
2002
N
Feb
2
2003
P
March
3
2004
R
Apr
4
2005
S
May
5
2006
T
Jun
6
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
DS30265 Rev. 10 - 2
2 of 3
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BAS40T/-04T/-05T/-06T
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30265 Rev. 10 - 2
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BAS40T/-04T/-05T/-06T
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参数对比
与BAS40T相近的元器件有:BAS40T_1、BAS40-06T、BAS40-05T、BAS40-04T。描述及对比如下:
型号 BAS40T BAS40T_1 BAS40-06T BAS40-05T BAS40-04T
描述 SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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