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BAT64-05W-E6433

Rectifier Diode, Schottky, 0.12A, 40V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
Reach Compliance Code
compliant
ECCN代码
EAR99
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.35 V
最大非重复峰值正向电流
0.8 A
最高工作温度
150 °C
最大输出电流
0.12 A
最大重复峰值反向电压
40 V
最大反向恢复时间
0.005 µs
表面贴装
YES
技术
SCHOTTKY
文档预览
BAT64...
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAT64
!
BAT64-02W
BAT64-04
BAT64-04W
!
BAT64-05
BAT64-05W
!
BAT64-06
BAT64-06W
!

, 
,
, 
,
, 
,




ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BAT64
BAT64-02W
BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
1
Pb-containing
Package
SOT23
SCD80
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
Configuration
single
single
series
series
common cathode
common cathode
common anode
common anode
L
S
(nH)
1.8
0.6
1.8
1.4
1.8
1.4
1.8
1.4
Marking
63s
64
64s
64s
65s
65s
66s
66s
package may be available upon special request
1
2007-06-11
BAT64...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Non-repetitive peak surge forward current
(t
10ms)
Average rectified forward current (50/60Hz, sinus)
I
FAV
Total power dissipation
P
tot
BAT64,
T
S
86°C
BAT64-02W,
T
S
121°C
BAT64-04, BAT64-06,
T
S
61°C
BAT64-04W, BAT64-06W,
T
S
111°C
BAT64-05,
T
S
36°C
BAT64-05W,
T
S
104°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAT64
BAT64-02W
BAT64-04, BAT64-06,
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
1
For
Symbol
V
R
I
F
I
FSM
Value
40
250
800
120
Unit
V
mA
mW
250
250
250
250
250
250
150
-55 ... 150
°C
T
j
T
stg
Symbol
R
thJS
Value
255
115
355
155
455
185
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2007-06-11
BAT64...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured
I
R
= 1 mA ,
R
L
= 100
t
rr
-
-
5
ns
C
T
-
4
6
pF
Unit
max.
-
V
µA
typ.
-
V
(BR)
I
R
40
-
-
V
F
270
310
370
500
-
-
320
385
440
570
2
200
mV
350
430
520
750
3
2007-06-11
BAT64...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
10
C
T
pF
8
7
6
5
4
3
2
1
0
0
10
20
V
V
R
30
10
-3
0
10
20
V
R
V
30
10
-2
10
-1
25 C
10
0
BAT 64...
EHB00059
Reverse current
I
R
=
ƒ
(V
R
)
T
A
= Parameter
BAT 64...
EHB00058
Ι
R
10
2
µ
A
10
1
T
A
= 125 C
85 C
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
BAT 64...
EHB00057
Forward current
I
F
=
ƒ
(T
S
)
BAT64W
300
Ι
F
10
mA
2
mA
10
1
T
A
= -40
25
85
125
C
C
C
C
200
I
F
150
100
50
0
0
10
0
10
-1
10
-2
0
0.5
V
V
F
1
15
30
45
60
75
90 105 120
°C
150
T
S
4
2007-06-11
BAT64...
Forward current
I
F
=
ƒ
(T
S
)
BAT64-02W
300
Forward current
I
F
=
ƒ
(T
S
)
BAT64-04, BAT64-06
300
mA
mA
200
200
I
F
150
I
F
150
100
100
50
50
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAT64-04W, BAT64-06W
300
Forward current
I
F
=
ƒ
(T
S
)
BAT64-05
300
mA
mA
200
200
I
F
150
I
F
150
100
100
50
50
0
0
90 105 120
°C
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
5
2007-06-11
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参数对比
与BAT64-05W-E6433相近的元器件有:BAT64-02W-H6327、BAT64-06W-E6327、BAT64-04E6327XT、BAT6404WE6327XT、BAT64-05W-E6327、BAT6405WE6327XT、BAT64-04W-E6327。描述及对比如下:
型号 BAT64-05W-E6433 BAT64-02W-H6327 BAT64-06W-E6327 BAT64-04E6327XT BAT6404WE6327XT BAT64-05W-E6327 BAT6405WE6327XT BAT64-04W-E6327
描述 Rectifier Diode, Schottky, 0.12A, 40V V(RRM), Rectifier Diode, Schottky, 1 Element, 0.25A, 40V V(RRM), Silicon, ROHS COMPLIANT, SCD-80, 2 PIN Rectifier Diode, Schottky, 0.12A, 40V V(RRM), Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, Rectifier Diode, Schottky, 2 Element, 0.25A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 Rectifier Diode, Schottky, 0.12A, 40V V(RRM), Rectifier Diode, Schottky, 2 Element, 0.25A, 40V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 Rectifier Diode, Schottky, 0.12A, 40V V(RRM),
厂商名称 Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌) Infineon(英飞凌)
Reach Compliance Code compliant compliant unknown compliant compliant unknown compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 0.12 A 0.25 A 0.12 A 0.12 A 0.25 A 0.12 A 0.25 A 0.12 A
最大重复峰值反向电压 40 V 40 V 40 V 40 V 40 V 40 V 40 V 40 V
最大反向恢复时间 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs
表面贴装 YES YES YES YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
是否Rohs认证 符合 符合 符合 - 符合 符合 符合 符合
最大正向电压 (VF) 0.35 V 0.35 V 0.35 V - - 0.35 V - 0.35 V
最大非重复峰值正向电流 0.8 A 0.8 A 0.8 A - - 0.8 A - 0.8 A
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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