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BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
BAV19
BAV20
BAV21
Value
120
200
250
200
1.0
4.0
-65 to +200
175
Units
V
V
V
mA
A
A
°C
°C
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
A
= 25°C unless otherwise noted
Parameter
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
Parameter
Breakdown Voltage
BAV19
BAV20
BAV21
Test Conditions
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
V
R
= 100 V, T
A
= 150°C
V
R
= 150 V
V
R
= 150 V, T
A
= 150°C
V
R
= 200 V
V
R
= 200 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100Ω
Min
120
200
250
Max
Units
V
V
V
V
V
nA
µA
nA
µA
nA
µA
pF
ns
V
F
I
R
Forward Voltage
Reverse Current
BAV19
BAV20
BAV21
C
T
t
rr
Total Capacitance
Reverse Recovery Time
1.0
1.25
100
100
100
100
100
100
5.0
50
2001
Fairchild Semiconductor Corporation
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
325
50
Ta=25
°
C
°
Ta= 25
°
C
Reverse Current, I
R
[nA]
Reverse Voltage, V [V]
R
40
30
300
20
10
275
3
5
10
20
30
50
100
0
55
R everse C urrent, I
R
[uA]
R everse Voltage, V
R
[V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
100
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
100
Figure 2. Reverse Current vs Reverse Voltage
IR - 55 to 205 V
Ta= 25
°
C
450
Ta= 25
°
C
90
80
70
60
50
40
30
20
Forward Voltage, V
R
[mV]
180
200
220
240
255
Reverse Current, I
R
[nA]
400
350
300
250
Reverse Voltage, V
R
[V]
1
2
3
5
10
20
30
50
100
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
Forward Current, I
F
[uA]
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
Figure 4. Forward Voltage vs Forward Current
VF - 1.0 to 100uA
Ta= 25
°
C
700
1.4
1.3
°
Ta= 25 C
Forward Voltage, V
F
[mV]
650
Forward Voltage, V
F
[mV]
1.2
1.1
1.0
0.9
0.8
0.7
600
550
500
450
0.1
0.2
0.3
0.5
1
2
3
5
10
10
20
30
50
100
200
300
500
800
Forward Current, I
F
[mA]
Forward Current, I
F
[mA]
Figure 5. Forward Voltage vs Forward Current
VF - 0.1 to 10mA
Figure 6. Forward Voltage vs Forward Current
VF - 10 to 800mA
BAV19/20/21, Rev. C
BAV19 / BAV20 / BAV21
Small Signal Diode
(continued)
Typical Characteristics
(continued)
900
800
1.3
Ta= 25
°
C
Ta= -40
°
°
C
Forward Voltage, V [mV]
F
Total Capacitance [pF]
1
3
10
1.2
700
600
500
400
Ta= 25
°
C
1.1
1.0
Ta= +80
°
C
300
200
100
0.001
0.9
0.003
0.01
0.03
0.1
0.3
0.8
0
2
4
6
8
10
12
14
F orw ard C urrent, I
F
[m A ]
Reverse Voltage [V]
Figure 7. Forward Voltage
vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
50
400
Figure 8. Total Capacitance
Reverse Recovery Time [nS]
300
Current [mA]
40
200
I
F
(A V
)
-A
VE
RA
30
GE
RE
CT
100
IF I E
DC
UR
RE
I
F
= I
R
= 30 mA
Rloop = 100 Ohms
20
1.0
1.5
2.0
2.5
3.0
0
0
50
100
NT
-m
A
150
Reverse Recovery Current, I
rr
[mA]
Ambient Temperature, T
A
[ C]
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current
Figure 10. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
500
Power Dissipation, P [mW]
D
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
200
Average Temperature, I
O
[ C]
Figure 11. Power Derating Curve
BAV19/20/21, Rev. C
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E
2
CMOS
TM
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FACT™
FACT Quiet Series™
DISCLAIMER
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®
FASTr™
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®
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QT Optoelectronics™
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®
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STAR*POWER™
Stealth™
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SuperSOT™-6
SuperSOT™-8
SyncFET™
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®
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STAR*POWER is used under license
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
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