BAV99...
Silicon Switching Diode
•
For high-speed switching applications
•
Series pair configuration
•
BAV99S / U: For orientation in reel see
package information below
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAV99
BAV99W
!
BAV99S
BAV99U
$
#
, "
"
, !
,
,
,
,
!
Type
BAV99
BAV99S
BAV99U
BAV99W
1
Pb-containing
Package
SOT23
SOT363
SC74
SOT323
Configuration
series
dual series
dual series
series
Marking
A7s
A7s
A7s
A7s
package may be available upon special request
1
2007-09-19
BAV99...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
Total power dissipation
BAV99,
T
S
≤
28°C
BAV99S,
T
S
≤
85°C
BAV99U,
T
S
≤
113°C
BAV99W,
T
S
≤
110°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAV99
BAV99S
BAV99U
BAV99W
1
For
Symbol
V
R
V
RM
I
F
I
FSM
Value
80
85
200
4.5
1
0.5
0.75
Unit
V
mA
A
P
tot
330
250
250
250
T
j
T
stg
Symbol
R
thJS
≤
360
≤
260
≤
150
≤
160
150
-65 ... 150
mW
°C
Value
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2007-09-19
BAV99...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
85
-
-
V
Breakdown voltage
V
(BR)
I
(BR)
= 100 µA
Reverse current
V
R
= 70 V
V
R
= 25 V,
T
A
= 150 °C
V
R
= 70 V,
T
A
= 150 °C
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
-
-
715
855
1000
1200
1250
I
R
-
-
-
-
-
-
0.15
30
50
mV
µA
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
-
-
1.5 pF
Diode capacitance
C
T
V
R
= 0 V,
f
= 1 MHz
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA, measured at
I
R
= 1mA,
R
L
= 100
Ω
Test circuit for reverse recovery time
D.U.T.
t
rr
-
-
4
ns
Pulse generator:
t
p
= 100ns,
D
= 0.05,
t
r
= 0.6ns,
R
i
= 50Ω
Oscillograph
Ι
F
EHN00019
Oscillograph:
R
= 50,
t
r
= 0.35ns
C
≤
1pF
3
2007-09-19
BAV99...
Reverse current
I
R
=
ƒ
(T
A
)
V
R
= Parameter
10
5
nA
Forward Voltage
V
F
=
ƒ
(T
A
)
I
F
= Parameter
1.0
BAV 99
EHB00078
V
F
10
4
V
Ι
F
= 100 mA
I
R
10 mA
10
3
0.5
70 V
25 V
1 mA
0.1 mA
10
2
10
1
0
25
50
75
100
°C
150
0
0
50
100
T
A
C
T
A
150
Forward current
I
F
=
ƒ
(V
F
)
T
A
= 25°C
BAV 99
EHB00076
Forward current
I
F
=
ƒ
(T
S
)
BAV99
250
mA
150
Ι
F
mA
200
175
100
I
F
150
125
100
typ
max
50
75
50
25
0
0
0.5
1.0
V
V
F
1.5
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
4
2007-09-19
BAV99...
Forward current
I
F
=
ƒ
(T
S
)
BAV99S
250
mA
Forward current
I
F
=
ƒ
(T
S
)
BAV99U
250
mA
200
175
200
175
I
F
150
125
100
75
50
25
0
0
I
F
90 105 120
°C
150
125
100
75
50
25
0
0
15
30
45
60
75
150
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Forward current
I
F
=
ƒ
(T
S
)
BAV99W
250
mA
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAV99
10
3
200
10
2
150
125
100
75
R
thJS
175
I
F
10
1
10
0
50
25
0
0
10
-1 -7
10
-6
-5
-4
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
10
10
10
10
-3
10
-2
s
10
0
T
S
T
P
5
2007-09-19
编程基础
