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BB 659C-02V E7912

变容二极管 Silicn Varible Capacitance Diode

器件类别:半导体    分立半导体    二极管与整流器    变容二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
厂商名称
Infineon(英飞凌)
产品种类
变容二极管
电容
36.5 pF
Vr - 反向电压
35 V
安装风格
SMD/SMT
封装 / 箱体
SC-79-2
最小工作温度
- 55 C
最大工作温度
+ 150 C
配置
Single
封装
Cut Tape
封装
Reel
应用
Tuner
高度
0.55 mm
长度
1.2 mm
宽度
0.8 mm
最小调谐率
14.2
工厂包装数量
8000
调谐率测试条件
1 / 28
文档预览
BB639C/BB659C...
Silicon Variable Capacitance Diode
For tuning of extended frequency band
in VHF TV / VTR tuners
High capacitance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
Pb-free (RoHS compliant) package
BB639C
BB659C/-02V

Type
BB639C
BB659C
BB659C-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
L
S
(nH)
1.8
0.6
0.6
Marking
yellow S
HH
H
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Peak reverse voltage
( R
5kΩ )
Forward current
Operating temperature range
Storage temperature
I
F
T
op
T
stg
20
-55 ... 150
-55 ... 150
mA
°C
Symbol
V
R
V
RM
Value
30
35
Unit
V
1
2011-06-15
BB639C/BB659C...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 85 °C
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 2 V,
f
= 1 MHz
V
R
= 25 V,
f
= 1 MHz
V
R
= 28 V,
f
= 1 MHz
C
T
Symbol
min.
I
R
-
-
Values
typ.
max.
Unit
nA
-
-
10
200
pF
36.5
27
2.5
2.4
39
30.2
2.72
2.55
15.3
11.1
42
33.2
3.05
2.75
-
-
%
-
-
-
-
0.3
0.5
0.6
0.6
2.5
1
2
0.7
-
Capacitance ratio
V
R
= 1 V,
V
R
= 28 V,
f
= 1 MHz
C
T1
/
C
T28
C
T2
/
C
T25
∆C
T
/
C
T
14.2
9.5
Capacitance ratio
V
R
= 2 V,
V
R
= 25 V,
f
= 1 MHz
Capacitance matching
1)
V
R
= 1V to 28V,
f
= 1 MHz,
7
diodes sequence,
BB639C
V
R
= 1V to 28V ,
f
= 1 MHz,
4
diodes sequence,
BB659C/-02V
V
R
= 1V to 28V,
f
= 1 MHz,
7
diodes sequence ,
BB659C/-02V
Series resistance
V
R
= 5 V,
f
= 470 MHz
r
S
L
S
-
-
Series inductance
1
For
nH
details please refer to Application Note 047
2
2011-06-15
BB639C/BB659C...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= 1MHz
40
pF
1/°C
Temperature coefficient of the diode
capacitance
T
Cc
=
ƒ
(
V
R
)
10
-3
30
C
T
25
TC
C
10
-4
10
-5 0
10
20
15
10
5
0
0
5
10
15
20
V
30
10
1
V
10
2
V
R
V
R
Reverse current
I
R
=
ƒ
(
T
A
)
V
R
= 28V
10
3
Reverse current
I
R
=
ƒ
(
V
R
)
T
A
= Parameter
10
3
pA
85°C
pA
10
2
10
2
25°C
I
R
I
R
10
1
10
1
10
0
10
0
-30
10
-1 0
10
-10
10
30
50
70
°C
100
10
1
V
10
2
T
A
V
R
3
2011-06-15
Package SC79
BB639C/BB659C...
4
2011-06-15
Package SCD80
BB639C/BB659C...
Package Outline
0.2
0.8
±0.1
10˚MAX.
M
A
+0.05
0.13
-0.03
A
±1.5˚
1.3
±0.1
2
1.7
±0.1
0.7
±0.1
Foot Print
1.45
0.35
Marking Layout (Example)
2005, June
Date code
0.35
BAR63-02W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
0.2
1.45
2.5
8
0.2
±0.05
Cathode
marking
1
0.3
±0.05
Cathode
marking
0.4
0.9
Cathode
marking
0.7
5
2011-06-15
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参数对比
与BB 659C-02V E7912相近的元器件有:BB-659C-H7903、BB-639C-E7904、BB 659C-02V H7912、BB 659C-02V H7908。描述及对比如下:
型号 BB 659C-02V E7912 BB-659C-H7903 BB-639C-E7904 BB 659C-02V H7912 BB 659C-02V H7908
描述 变容二极管 Silicn Varible Capacitance Diode Varactor Diodes TV & SAT TUNER DIODE Varactor Diodes Silicon Variable Capacitance Diode 变容二极管 TV & SAT TUNER DIODE 变容二极管 TV & SAT TUNER DIODE
厂商名称 Infineon(英飞凌) - - Infineon(英飞凌) Infineon(英飞凌)
产品种类 变容二极管 - - 变容二极管 变容二极管
封装 Reel - - Reel Reel
工厂包装数量 8000 - - 8000 3000
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